High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 42 A ICM TC = 25°C, 1 ms 180 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load 90 1350 A V TSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive 10 µs PC TC = 25°C ICM = VCES = 360 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2004 IXYS All rights reserve °C 260 °C 1.13/10Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 750 µA, VCE = VGE = IC90, VGE = 15 V 350 1700 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 3.7 5.5 V V 50 1.5 µA mA ±100 nA 3.6 V V TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features High Blocking Voltage z JEDEC TO-268 surface and JEDEC TO-247 AD z Low conduction losses z High current handling capability z MOS Gate turn-on - drive simplicity z Molding epoxies meet UL 94 V-0 flammability classification z Applications z AC motor speed control z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z Capacitor discharge circuits Advantages z Lower conduction losses than MOSFETs z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS98710B(12/04) IXBH 42N170 IXBT 42N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 30 S 3500 pF 195 pF Cres 45 pF Qg 147 nC 40 nC ∅P Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 70 nC td(on) Inductive load, TJ = 25°°C 45 ns tri IC = IC90, VGE = 15 V VCE = 0.5 VCES, RG = Roff = 10 Ω 35 ns 365 ns 465 ns 9 mJ 45 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC 38 ns 50 mJ 390 ns 730 ns 12.8 mJ = IC90, VGE = 15 V VCE = 0.5 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 Outline 0.35 K/W (TO-247) 0.25 Reverse Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V 3.0 24 360 V A ns Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXBH 42N170 IXBT 42N170 Fig. 1. Output Characte ristics @ 25 Deg. C 90 250 VGE = 15V 13V 11V 80 70 VGE = 17V 225 60 13V 175 9V 50 40 7V 30 11V 150 125 100 9V 75 20 50 10 7V 25 5V 0 0 0 1 2 3 4 5 6 0 7 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 90 14 16 18 1.8 V GE = 15V 1.7 1.6 60 V C E (sat)- Normalized I C - Amperes 70 12 Fig. 4. De pende nce of V CE(sat) on Tem perature VGE = 15V 13V 11V 80 10 V C E - Volts V C E - Volts 9V 50 40 7V 30 20 1.5 I C = 84A 1.4 1.3 I C = 42A 1.2 1.1 1.0 0.9 5V 10 I C = 21A 0.8 0 0.7 0 1 2 3 4 5 6 7 -50 -25 0 V CE - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 80 10 TJ = 25ºC 9 70 60 8 I C = 84A 42A 21A 7 6 I C - Amperes VC E - Volts 15V 200 I C - Amperes I C - Amperes Fig. 2. Extended Output Characte ristics @ 25 de g. C 5 50 40 30 4 20 3 10 TJ = 125ºC 25ºC -40ºC 0 2 5 6 7 8 9 10 11 12 13 14 V G E - Volts © 2004 IXYS All rights reserve 15 16 17 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXBH 42N170 IXBT 42N170 Fig. 8. Forw ard Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 45 200 40 180 160 TJ = -40ºC 25ºC 125ºC 30 I F - Amperes g f s - Siemens 35 25 20 140 T J = 25 º C 120 100 15 T J = 125 º C 80 60 10 40 5 20 0 0 0 10 20 30 40 50 60 70 0.5 80 1 1.5 I C - Amperes R G = 10Ω VGE = 15V VCE = 850V 20 I C = 84A E off - MilliJoules E off - milliJoules 3.5 Energy on Ic 22 25 20 I C = 42A 15 18 16 14 TJ = 125ºC 12 TJ = 25ºC 10 8 I C = 21A 10 3 24 35 TJ = 125ºC VGE = 15V VCE = 850V 2.5 Fig. 10. Dependence of Turn-Off Fig. 9. Dependence of Turn-Off Energy on RG 30 2 V F - Volts 6 4 5 0 10 20 30 40 50 60 70 80 20 90 30 40 Fig. 11. Dependence of Turn-Off Energy on Tem perature 60 70 80 90 Fig. 12. Gate Charge 24 15 VCE = 600V I C = 42A I G = 10mA 22 I C = 84A 18 R G = 10Ω VGE = 15V VCE = 850V 16 14 I C = 42A 12 12 VG E - Volts 20 E off - milliJoules 50 I C - Amperes R G - Ohms 9 6 10 8 3 I C = 21A 6 4 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 0 20 40 60 80 100 120 Q G - nanoCoulombs 140 160 IXBH 42N170 IXBT 42N170 Fig. 13. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 14. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1 0.1 0.01 0.1 © 2004 IXYS All rights reserve 1 10 Pulse Width - milliseconds 100 1000