IXYS IXBH42N170

High Voltage, High Gain
BIMOSFET Monolithic
Bipolar MOS Transistor
TM
VCES = 1700 V
= 75 A
IC25
VCE(sat) = 3.6 V
IXBH 42N170
IXBT 42N170
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
42
A
ICM
TC = 25°C, 1 ms
180
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
90
1350
A
V
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10
µs
PC
TC = 25°C
ICM =
VCES =
360
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque (M3)
Weight
TO-247 AD
TO-268
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 2004 IXYS All rights reserve
°C
260
°C
1.13/10Nm/lb.in.
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 750 µA, VCE = VGE
= IC90, VGE = 15 V
350
1700
2.5
TJ = 25°C
TJ = 125°C
TJ = 125°C
3.7
5.5
V
V
50
1.5
µA
mA
±100
nA
3.6
V
V
TO-268 (IXBT)
G
E
(TAB)
TO-247 AD (IXBH)
G
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
High Blocking Voltage
z
JEDEC TO-268 surface and
JEDEC TO-247 AD
z
Low conduction losses
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Molding epoxies meet UL 94 V-0
flammability classification
z
Applications
z
AC motor speed control
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
Capacitor discharge circuits
Advantages
z
Lower conduction losses than MOSFETs
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98710B(12/04)
IXBH 42N170
IXBT 42N170
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
20
30
S
3500
pF
195
pF
Cres
45
pF
Qg
147
nC
40
nC
∅P
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
70
nC
td(on)
Inductive load, TJ = 25°°C
45
ns
tri
IC = IC90, VGE = 15 V
VCE = 0.5 VCES, RG = Roff = 10 Ω
35
ns
365
ns
465
ns
9
mJ
45
ns
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°C
IC
38
ns
50
mJ
390
ns
730
ns
12.8
mJ
= IC90, VGE = 15 V
VCE = 0.5 VCES, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
RthJC
RthCK
TO-247 AD Outline
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-268 Outline
0.35 K/W
(TO-247)
0.25
Reverse Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF
t
= IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
IRM
t rr
IF
vR
= 25A, VGE = 0 V, -diF/dt = 50 A/us
= 100V
3.0
24
360
V
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXBH 42N170
IXBT 42N170
Fig. 1. Output Characte ristics
@ 25 Deg. C
90
250
VGE = 15V
13V
11V
80
70
VGE = 17V
225
60
13V
175
9V
50
40
7V
30
11V
150
125
100
9V
75
20
50
10
7V
25
5V
0
0
0
1
2
3
4
5
6
0
7
2
4
6
8
Fig. 3. Output Characteristics
@ 125 Deg. C
90
14
16
18
1.8
V GE = 15V
1.7
1.6
60
V C E (sat)- Normalized
I C - Amperes
70
12
Fig. 4. De pende nce of V CE(sat) on
Tem perature
VGE = 15V
13V
11V
80
10
V C E - Volts
V C E - Volts
9V
50
40
7V
30
20
1.5
I C = 84A
1.4
1.3
I C = 42A
1.2
1.1
1.0
0.9
5V
10
I C = 21A
0.8
0
0.7
0
1
2
3
4
5
6
7
-50
-25
0
V CE - Volts
25
50
75
100
125
150
8
8.5
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
80
10
TJ = 25ºC
9
70
60
8
I C = 84A
42A
21A
7
6
I C - Amperes
VC E - Volts
15V
200
I C - Amperes
I C - Amperes
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
5
50
40
30
4
20
3
10
TJ = 125ºC
25ºC
-40ºC
0
2
5
6
7
8
9
10
11 12 13 14
V G E - Volts
© 2004 IXYS All rights reserve
15 16 17
4
4.5
5
5.5
6
6.5
V G E - Volts
7
7.5
IXBH 42N170
IXBT 42N170
Fig. 8. Forw ard Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
45
200
40
180
160
TJ = -40ºC
25ºC
125ºC
30
I F - Amperes
g f s - Siemens
35
25
20
140
T J = 25 º C
120
100
15
T J = 125 º C
80
60
10
40
5
20
0
0
0
10
20
30
40
50
60
70
0.5
80
1
1.5
I C - Amperes
R G = 10Ω
VGE = 15V
VCE = 850V
20
I C = 84A
E off - MilliJoules
E off - milliJoules
3.5
Energy on Ic
22
25
20
I C = 42A
15
18
16
14
TJ = 125ºC
12
TJ = 25ºC
10
8
I C = 21A
10
3
24
35
TJ = 125ºC
VGE = 15V
VCE = 850V
2.5
Fig. 10. Dependence of Turn-Off
Fig. 9. Dependence of Turn-Off
Energy on RG
30
2
V F - Volts
6
4
5
0
10
20
30
40
50
60
70
80
20
90
30
40
Fig. 11. Dependence of Turn-Off
Energy on Tem perature
60
70
80
90
Fig. 12. Gate Charge
24
15
VCE = 600V
I C = 42A
I G = 10mA
22
I C = 84A
18
R G = 10Ω
VGE = 15V
VCE = 850V
16
14
I C = 42A
12
12
VG E - Volts
20
E off - milliJoules
50
I C - Amperes
R G - Ohms
9
6
10
8
3
I C = 21A
6
4
0
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
0
20
40
60
80
100
120
Q G - nanoCoulombs
140
160
IXBH 42N170
IXBT 42N170
Fig. 13. Capacitance
10000
Capacitance - p F
f = 1 MHz
C ies
1000
C oes
100
C res
10
0
5
10
15
20
25
V C E - Volts
30
35
40
Fig. 14. Maxim um Transient Therm al Resistance
R (th) J C - (ºC/W)
1
0.1
0.01
0.1
© 2004 IXYS All rights reserve
1
10
Pulse Width - milliseconds
100
1000