Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS(on) Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 100 400 100 A A A EAR TC = 25°C 64 mJ EAS TC = 25°C 3 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 600 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C - °C 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque = 250 V = 100 A = 27 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TL VDSS ID25 t = 1 min t=1s 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 250 VDS = VGS, ID = 8mA 2 VGS(th) IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 V power supplies • DC choppers • Temperature and lighting controls ±200 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V • DC-DC converters • Battery chargers • Switched-mode and resonant-mode 100 mA 2 mA 27 mW Advantages • Easy to mount • Space savings • High power density 98625A (6/99) 1-2 IXFN 100N25 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 40 70 S 9100 pF 1800 pF 600 pF 42 ns 55 ns M4 screws (4x) supplied 110 ns Dim. 40 ns A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 300 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 57 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 160 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 RthJC 0.22 0.05 RthCK Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive; pulse width limited by TJM 400 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM miniBLOC, SOT-227 B 1.4 mC 10 A Millimeter Min. Max. Inches Min. Max. Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2