IXYS IXFN43N60

ADVANCE INFORMATION
HiPerFETTM
Power MOSFET
IXFN 43N60
IXFN 40N60
IXFK 43N60
IXFK 40N60
Single MOSFET Die
VDSS
I D25
RDS(on)
trr
600V
600V
600V
600V
43A
40A
43A
40A
0.13W
0.15W
0.13W
0.15W
200ns
200ns
200ns
200ns
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
IXFK IXFK
43N60 40N60
IXFN
43N60
IXFN
40N60
VDSS
VDGR
T J = 25°C to 150°C
T J = 25°C to 150°C
600
600
VGS
VGSM
Continuous
Transient
±20
±30
ID25
IDM‚
IAR
TC = 25°C
T C = 25°C
TC = 25°C
EAR
TC = 25°C
60
60
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T J £ 150°C, RG = 2 W
5
5
V/ns
PD
TC = 25°C
560
600
43
172
43
600
600
V
V
±20
±30
40
160
40
TJ
TJM
Tstg
43
172
43
V
V
40
160
40
W
°C
°C
°C
-55 ... +150
150
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque
t = 1 min
t=1s
300
2500
3000
0.9/6
N/A
Weight
VDSS
VGH(th)
VGS= 0 V, ID = 3mA
VDS = VGS, ID = 8mA
IGSS
VGS= ±20 VGE = 0
IDSS
VDS= 0.8 • VDSS V
VGS= 0 V
RDS(on)
VGS= 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
30
g
Characteristic Values
Min. Max.
600
2
4
V
V
±200
nA
TJ = 25 °C
TJ = 125 °C
400
2
mA
mA
43N60
40N60
0.13
0.15
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
°C
N/A
N/A
N/A
A
A
A
G
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· Encapsulating epoxy meets
UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
97503 A(7/97)
1-2
IXFK43N60
IXFK40N60
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
TBD
TBD
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
TBD
pF
C rss
TBD
pF
td(on)
TBD
ns
gfs
C iss
Coss
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
TBD
ns
td(off)
R G = 1 Ω (External),
TBD
ns
tf
TBD
ns
Qg(on)
TBD
nC
TBD
nC
TBD
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
TO-264 AA
RthCK
TO-264 AA
RthJC
miniBLOC, SOT-227 B
RthCK
miniBLOC, SOT-227 B
0.22
0.15
K/W
K/W
0.21
0.05
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
K/W
K/W
Characteristic Values
Min. Typ. Max.
IS
VGS = 0
43N60
40N60
43
40
A
A
ISM
Repetitive;
pulse width limited by TJM
43N60
40N60
172
160
A
A
VSD
IF = 100 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
QRM
IRM
IF = 50 A, -di/dt = 100 A/µs, VR = 100 V
TBD
TBD
TBD
TO-264 AA Outline
S
tr
Qgs
ns
µC
A
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
RGS = 1 MΩ
Pulse width limited by TJM.
© 2000 IXYS All rights reserved
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Notes: 1.
2.
IXFN43N60
IXFN40N60
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2