HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS(on) Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30 VGS VGSM Continuous Transient ID25 IL(RMS) IDM IAR TC = 25°C Terminal (current limit) TC = 25°C; Note 1 TC = 25°C 150 100 600 150 EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque miniBLOC, SOT-227 B (IXFN) E153432 S G V V A A A A S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 600 W Features -55 ... +150 150 -55 ... +150 °C °C °C · International standard package · Encapsulating epoxy meets 300 °C 2500 3000 V~ V~ t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier g Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. VDSS VGS= 0 V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2 IGSS VGS= ±20V, VGS = 0V IDSS VDS= VDSS VGS= 0 V RDS(on) VGS = 10V, ID = 0.5 • ID25 Note 2 Characteristic Values Typ. Max. TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4 V · · · · DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls · Low voltage relays ±100 nA 100 2 mA mA Advantages 12.5 mW · Easy to mount · Space savings · High power density 98653 (9/99) 1-2 IXFN 150N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 60A, Note 2 50 75 miniBLOC, SOT-227 B S 9100 pF 2600 pF C rss 1200 pF td(on) 50 ns 60 ns 110 ns M4 screws (4x) supplied 45 ns Dim. 360 nC A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 65 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 190 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) R G = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B 0.21 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Characteristic Values Min. Typ. Max. IS VGS = 0 150 A ISM Repetitive; pulse width limited by TJM 600 A VSD IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr Q RM IRM Notes: I F = 50 A, -di/dt = 100 A/ms, V R = 50 V 1.1 13 Millimeter Min. Max. Inches Min. Max. 1. Pulse width limited by TJM. 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2