HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS(on) = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 72 A IDM TC = 25°C, Note 1 320 A IAR TC = 25°C 80 A EAR TC = 25°C 64 mJ EAS TC = 25°C 6 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 580 W -40 ... +150 °C 150 °C Tstg -40 ... +150 °C 2500 3000 V~ V~ TJ 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 Weight Symbol Test Conditions g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 500 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Note 2 © 2002 IXYS All rights reserved S G S TJM VISOL ISOPLUS 227TM (IXFE) TJ = 25°C TJ = 125°C V 4 V ±200 nA 100 2 µA mA 55 mΩ D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Low cost • Easy to mount • Space savings • High power density 98898A (5/02) IXFE 80N50 Symbol Test Conditions gfs VDS = 15 V; ID = IT, Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 70 S 9890 pF 1750 pF 460 pF 61 ns 70 ns 102 ns 27 ns 380 nC 80 nC 173 nC td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.22 RthCK 0.07 Source-Drain Diode ISOPLUS-227 B K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V 80 A 320 A 1.3 V 250 1.2 8 ns µC A Please see IXFN80N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IT = 40 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1