DHG 30 I 600 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 30 A 40 ns Part number DHG 30 I 600 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-220 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 600 V 50 µA VR = 600 V TVJ = 125 °C 2 mA IF = 30 A TVJ = 25 °C 2.27 V IF = 60 A 3.14 V IF = 30 A IF = 60 A rectangular TVJ = 125 °C d = 0.5 2.24 V 3.23 V TC = 85°C 30 A TVJ = 150°C 1.17 V 32 mΩ 0.70 K/W 150 °C TC = 25 °C 180 W TVJ = 45°C 200 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 600 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 30 A; VR = 300 V -di F /dt = 600 A/µs VR = 400 V; f = 1 MHz TVJ = 25 °C 13 A TVJ = 125°C 17 A TVJ = 25 °C 40 ns TVJ = 125°C 60 ns TVJ = 25 °C 16 pF Data according to IEC 60747and per diode unless otherwise specified 20110823a DHG 30 I 600 PA preliminary Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 35 0.50 -55 Weight 150 2 MD mounting torque FC mounting force with clip A K/W °C g 0.4 0.6 Nm 20 60 N Product Marking Part number Marking on product Logo DateCode Assembly Code D H G 30 I 600 PA abcdef YYWW Z = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) XXXXXX Assembly Line Ordering Standard Ordering Number DHG 30 I 600 PA Similar Part DHG30I600HA DHG30IM600PC IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG30I600PA Package TO-247AD (2) TO-263AB (D2Pak) Delivery Mode Tube Quantity 50 Code No. 504019 Voltage Class 600 600 Data according to IEC 60747and per diode unless otherwise specified 20110823a DHG 30 I 600 PA preliminary Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 ØP H1 Q E D 4 3 L1 1 L 2x b2 2x b e C A2 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110823a DHG 30 I 600 PA preliminary 1.0 60 TVJ = 125°C VR = 300 V 50 0.8 60 A 40 Qrr 0.6 IF 30 [A] [µC] 0.4 30 A 15 A TVJ = 125°C 20 TVJ = 25°C 0.2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 200 3.0 300 400 VF [V] 600 700 800 900 1000 diF /dt [A/µs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 30 200 TVJ = 125°C 25 500 VR = 300 V 60 A TVJ = 125°C 60 A 30 A 15 A VR = 300 V 160 20 IRM trr 120 30 A 15 [A] [ns] 80 15 A 10 40 5 0 200 300 400 500 600 700 800 0 200 900 1000 diF /dt [A/µs] 300 400 500 600 700 800 900 1000 diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 1 ZthJC [K/W Ri 0.158 0.118 0.155 0.269 0.1 0.001 0.01 0.1 ti 0.0005 0.004 0.02 0.15 1 10 tP [s] Fig. 5 Transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110823a