IX36MB

IX36MB
Three Phase Rectifier Bridge
VRSM
V
900
VRRM
V
800
IdAV = 35A
VRRM = 800V
+
Type
IX36MB080
~
~
-
Symbol
Conditions
IdAV
IdAVM
TC = 85°C, module
TC = 62°C, module
IFSM
TVJ = 45°C;
VR = 0
I2t
E72873
Maximum Ratings
25
30
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
550
600
A
A
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
500
550
A
A
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1520
1520
A2s
A2s
TVJ = TVJM;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1250
1250
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
2500
3000
V~
V~
2 ±10%
18 ±10%
Nm
lb.in.
19
g
TVJ
TVJM
Tstg
VISOL
50/60 Hz, RMS t = 1 min
IISOL < 1 mA
t=1s
Md
Mounting torque (M5)
(10-32 UNF)
Weight
Typ.
Symbol
Conditions
IR
VR = VRRM TVJ = 25°C
TVJ = TVJM
0.3
2.0
mA
mA
VF
IF = 150 A
TVJ = 25°C
1.7
V
VT0
rt
For power-loss calculations only
0.8
7.4
V
mW
RthJC
per diode; 120° el.
per module
per diode; 120° el.
per module
7.50
1.88
8.40
2.1
K/W
K/W
K/W
K/W
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
RthJH
dS
dA
a
Features
• Package with ¼" fast-on terminals
•Isolation voltage 3000 V~
•Planar passivated chips
•Low forward voltage drop
Applications
• Supplies for DC power equipment
•Input rectifiers for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
• Easy to mount with one screw
•Space and weight savings
•Improved temperature & power cycling
Characteristic Values
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
20130731a
1-3
IX36MB
Dimensions in mm (1 mm = 0.0394“)
6.3 x 0.8
D
B
E
A
Ordering
Part Name
Marking on Product
Delivering
Mode
Base
Qty
Ordering
Code
Standard
IX36MB080
IX36MB080
Box
50
514559
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
20130731a
2-3
IX36MB
450
60
50
50 Hz
0.8 x VRRM
VR = 0 V
400
1200
40
IFSM350
IF
[A]
1600
30
[A] 300
20
10
400
0.8
200
10-3
1.2
10-2
10-1
t [s]
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
10
Ptot
[W]
100
VF [V]
6
1
10
t [ms]
Fig. 3 I2t vs. time per diode
24
RthJA:
DC =
1
0.5
0.4
0.33
0.17
0.08
8
TVJ = 150°C
250
TVJ = 25°C
0
0.4
800
2
[A s]
TVJ = 150°C
TVJ =
125°C
150°C
TVJ = 45°C
2
It
TVJ = 45°C
DC =
0.6 KW
20
0.8 KW
1
KW
2
KW
4
KW
8
KW
1
0.5
16
IF(AV)M
0.4
0.33
0.17
12
0.08
[A]
4
8
2
0
4
0
2
4
6
8
10 0
25
50
75
100
125
150
175
0
0
25
50
TA [°C]
IF(AV)M [A]
75
100 125 150
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
8
6
ZthJC
Constants for ZthJC calculation:
4
[K/W]
2
0
1
10
100
1000
10000
i
Rth (K/W)
1
0.040
0.005
2
0.150
0.030
3
1.710
0.400
4
5.100
2.300
ti (s)
100000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
20130731a
3-3