IX36MB Three Phase Rectifier Bridge VRSM V 900 VRRM V 800 IdAV = 35A VRRM = 800V + Type IX36MB080 ~ ~ - Symbol Conditions IdAV IdAVM TC = 85°C, module TC = 62°C, module IFSM TVJ = 45°C; VR = 0 I2t E72873 Maximum Ratings 25 30 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 550 600 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 500 550 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1520 1520 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1250 1250 A2s A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ 2 ±10% 18 ±10% Nm lb.in. 19 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25°C TVJ = TVJM 0.3 2.0 mA mA VF IF = 150 A TVJ = 25°C 1.7 V VT0 rt For power-loss calculations only 0.8 7.4 V mW RthJC per diode; 120° el. per module per diode; 120° el. per module 7.50 1.88 8.40 2.1 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 RthJH dS dA a Features • Package with ¼" fast-on terminals •Isolation voltage 3000 V~ •Planar passivated chips •Low forward voltage drop Applications • Supplies for DC power equipment •Input rectifiers for PWM inverter •Battery DC power supplies •Field supply for DC motors Advantages • Easy to mount with one screw •Space and weight savings •Improved temperature & power cycling Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20130731a 1-3 IX36MB Dimensions in mm (1 mm = 0.0394“) 6.3 x 0.8 D B E A Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard IX36MB080 IX36MB080 Box 50 514559 IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20130731a 2-3 IX36MB 450 60 50 50 Hz 0.8 x VRRM VR = 0 V 400 1200 40 IFSM350 IF [A] 1600 30 [A] 300 20 10 400 0.8 200 10-3 1.2 10-2 10-1 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 10 Ptot [W] 100 VF [V] 6 1 10 t [ms] Fig. 3 I2t vs. time per diode 24 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 8 TVJ = 150°C 250 TVJ = 25°C 0 0.4 800 2 [A s] TVJ = 150°C TVJ = 125°C 150°C TVJ = 45°C 2 It TVJ = 45°C DC = 0.6 KW 20 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 0.5 16 IF(AV)M 0.4 0.33 0.17 12 0.08 [A] 4 8 2 0 4 0 2 4 6 8 10 0 25 50 75 100 125 150 175 0 0 25 50 TA [°C] IF(AV)M [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 8 6 ZthJC Constants for ZthJC calculation: 4 [K/W] 2 0 1 10 100 1000 10000 i Rth (K/W) 1 0.040 0.005 2 0.150 0.030 3 1.710 0.400 4 5.100 2.300 ti (s) 100000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20130731a 3-3