VUO 60 IdAV = 72 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 + + Type VUO 60-12NO3 VUO 60-14NO3 VUO 60-16NO3 VUO 60-18NO3* + ~ ~~ ~ ~ ~ – – – * delivery time on request Symbol Test Conditions IdAV ① IdAVM ① TC = 85°C, module module IFSM TVJ = 45°C; VR = 0 Maximum Ratings Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop ¼" fast-on terminals UL registered E 72873 ● I2t 72 75 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 650 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 540 600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1770 A2s A2s 1460 1510 2 As A2s -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 50 Nm lb.in. g TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM 0.3 5 mA mA VF IF TVJ = 25°C 1.9 V VT0 rT For power-loss calculations only 0.8 6.5 V mW RthJC per diode, DC current per module per diode, DC current per module 1.2 0.2 1.6 0.27 K/W K/W K/W K/W 10 9.4 50 mm mm m/s2 RthJH dS dA a ● ● ● ● Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Rectifier for DC motors field current ● ● ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values Creep distance on surface Strike distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. ① for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ● ● TVJ TVJM Tstg = 150 A; ● Use output terminals in parallel connection! 1-2 VUO 60 80 600 A 70 A 500 IFSM IF 60 104 50Hz, 80% VRRM A2s VR = 0 V 2 It TVJ = 45°C 400 50 TVJ = 45°C 40 103 300 TVJ = 125°C 30 TVJ=125°C TVJ= 25°C 200 20 TVJ = 125°C 100 10 0 0.0 0.5 102 0 0.001 V 1.5 1.0 VF 0.01 0.1 1 s 1 2 3 t Fig. 4 Forward current versus voltage drop per diode Fig. 6 I2t versus time per diode Fig. 5 Surge overload current 80 A 70 250 W RthHA : 200 0.2 0.5 1.0 1.5 2.0 3.0 5.0 Ptot 150 100 4 5 6 7 ms 8 910 t K/W K/W K/W K/W K/W K/W K/W 60 Id(AV)M 50 40 30 20 50 10 0 0 0 10 20 30 40 50 60 70 A 0 20 Id(AV)M 40 60 80 100 120 °C 0 20 40 60 Tamb Fig. 7 Power dissipation versus direct output current and ambient temperature 80 100 120 °C TC Fig. 8 Max. forward current versus case temperature 1.8 K/W 1.6 1.4 ZthJH 1.2 1.0 Constants for ZthJH calculation: 0.8 i 0.6 1 2 3 4 0.4 0.2 0.0 0.001 0.01 0.1 1 ti (s) 0.883 0.098 0.202 0.417 0.102 0.103 0.492 0.62 100 t 706 Fig. 9 Transient thermal impedance junction to heatsink s 10 Rthi (K/W) © 2000 IXYS All rights reserved 2-2