MIXA81WB1200TEH

MIXA81WB1200TEH
tentative
3~
Rectifier
XPT IGBT Module
Brake
Chopper
3~
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
I DAV =
290 A I C25
90 A I C25
=
I FSM = 1200 A VCE(sat) =
= 120 A
1.8 V VCE(sat) =
1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA81WB1200TEH
Backside: isolated
30/31/32 26/27
17
10
7
1/2
3/4
28/29
5/6
23
8/9
22
13
11/12
20
14/15
18
19
33/34/35
16
24/25
21
Features / Advantages:
Applications:
Package: E3-Pack
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1700
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1600
V
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
VR = 1600 V
TVJ = 25°C
100
µA
VR = 1600 V
TVJ = 125°C
0.5
mA
I F = 120 A
TVJ = 25°C
1.23
V
V
I F = 240 A
I F = 120 A
TVJ = 125°C
1.19
T VJ = 150 °C
290
A
TVJ = 150 °C
0.85
V
I F = 240 A
V
TC = 80°C
I DAV
bridge output current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
d=⅓
for power loss calculation only
Ptot
V
2.7
mΩ
0.45
K/W
K/W
0.10
TC = 25°C
280
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.20
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.30
kA
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
1.02
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.10
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
7.20 kA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
6.98 kA²s
TVJ = 150 °C
5.20 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 600 V f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
5.04 kA²s
26
pF
20120719
MIXA81WB1200TEH
tentative
Ratings
Brake IGBT
Symbol
VCES
Definition
VGES
Conditions
min.
max.
1200
Unit
V
max. DC gate voltage
±20
V
VGEM
max. transient collector gate voltage
±30
V
I C25
collector current
TVJ =
collector emitter voltage
I C80
TC = 25°C
90
A
TC = 80 °C
60
A
290
W
2.1
V
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
VGE(th)
gate emitter threshold voltage
I C = 2 mA; VGE = V CE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES ; V GE = 0 V
TVJ = 25°C
I GES
gate emitter leakage current
VGE = ±20 V
TC = 25°C
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; I C = 55 A
t d(on)
turn-on delay time
I C = 55 A; VGE= 15 V
TVJ = 25°C
1.8
TVJ = 125°C
2.1
TVJ = 125°C
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
I CM
typ.
25°C
inductive load
5.9
TVJ = 125°C
VGE = ±15 V; R G = 15 Ω
short circuit safe operating area
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
I SC
short circuit current
R G = 15 Ω; non-repetitive
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
V
0.1
mA
mA
0.1
nA
165
nC
70
ns
40
ns
250
ns
100
ns
4.5
mJ
5.5
mJ
TVJ = 125°C
VCEK = 1200 V
SCSOA
6.5
500
VCE = 600 V; IC = 55 A
VGE = ±15 V; R G = 15 Ω
5.4
V
TVJ = 125°C
150
A
10
µs
A
200
0.43 K/W
K/W
0.10
Brake Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
44
A
TC = 80 °C
29
A
TVJ = 25°C
2.20
V
TVJ = 25°C
0.1
mA
TVJ = 125°C
2
mA
I F 80
VF
forward voltage
I F = 30 A
IR
reverse current
VR = VRRM
Q rr
reverse recovery charge
VR =
I RM
max. reverse recovery current
-di F /dt = 600 A/µs
t rr
reverse recovery time
IF =
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
TVJ = 125°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
600 V
30 A
V
1.90
3.5
µC
30
A
TVJ = 125°C
350
ns
0.9
mJ
1.2 K/W
0.10
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20120719
MIXA81WB1200TEH
tentative
Ratings
Inverter IGBT
Symbol
VCES
collector emitter voltage
Definition
VGES
Conditions
min.
max.
1200
Unit
V
max. DC gate voltage
±20
V
VGEM
max. transient collector gate voltage
±30
V
I C25
collector current
TVJ =
I C80
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
VGE(th)
gate emitter threshold voltage
IC = 3
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
I GES
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 75 A
t d(on)
turn-on delay time
TC = 25°C
120
A
TC = 80 °C
84
A
390
W
2.1
V
TC = 25°C
I C = 75 A; VGE = 15 V
mA; VGE = VCE
TVJ = 25°C
1.8
TVJ = 125°C
2.1
TVJ = 25°C
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
I CM
inductive load
5.9
TVJ = 125°C
VGE = ±15 V; R G = 10 Ω
short circuit safe operating area
VCEmax = 1200 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
I SC
short circuit current
R G = 10 Ω; non-repetitive
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
6.5
V
0.2
mA
mA
0.6
nA
230
nC
70
ns
40
ns
250
ns
100
ns
6.8
mJ
8.3
mJ
TVJ = 125°C
VCEmax = 1200 V
SCSOA
V
500
VCE = 600 V; IC = 75 A
VGE = ±15 V; R G = 10 Ω
5.4
TVJ = 25°C
TVJ = 125°C
tr
typ.
25°C
TVJ = 125°C
225
A
10
µs
A
300
0.32 K/W
K/W
0.10
Inverter Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
135
A
TC = 80 °C
90
A
2.20
V
I F 80
VF
forward voltage
I F = 100 A
TVJ = 25°C
TVJ = 125°C
IR
reverse current
VR = VRRM
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
*
TVJ = 25°C
-di F /dt = 1600 A/µs
IF = 100 A; VGE = 0 V
TVJ = 125°C
mA
*
mA
12.5
µC
TVJ = 125°C
VR = 600 V
V
1.90
100
A
350
ns
4
mJ
0.4 K/W
0.10
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20120719
MIXA81WB1200TEH
tentative
Package
Ratings
E3-Pack
Symbol
I RMS
Definition
Conditions
min.
RMS current
per terminal
Tstg
storage temperature
-40
T VJ
virtual junction temperature
-40
Weight
mounting torque
VISOL
isolation voltage
R pin-chip
Unit
A
125
°C
150
°C
3
t = 1 second
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
d Spb/Apb
max.
300
270
MD
d Spp/App
typ.
6
3600
V
3000
V
6.0
mm
terminal to backside
12.0
mm
5
resistance pin to chip
2D Data Matrix
XXX XX-XXXXX
UL
Part number
Ordering
Standard
Nm
terminal to terminal
creepage distance on surface | striking distance through air
Logo
g
mΩ
Part number
=
=
=
=
=
=
=
=
=
M
I
X
A
81
WB
1200
T
EH
YYWWx
Date Code Location
Part Number
MIXA81WB1200TEH
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
6-Pack + 3~ Rectifier Bridge & Brake Unit
Reverse Voltage [V]
Thermistor \ Temperature sensor
E3-Pack
Marking on Product
MIXA81WB1200TEH
Delivery Mode
Box
Quantity
5
Code No.
512760
105
Temperature Sensor NTC
Symbol
Definition
Conditions
R 25
resistance
TVJ = 25°
B 25/50
temperature coefficient
typ.
min.
5
4.75
max.
Unit
5.25
kΩ
3375
K
104
R
[ ]
103
Equivalent Circuits for Simulation
I
V0
R0
T VJ = 150°C
* on die level
Rectifier
Brake
IGBT
Brake
Diode
Inverter
IGBT
Inverter
Diode
102
0
V 0 max
threshold voltage
0.85
1.1
1.2
1.1
1.35
V
R 0 max
slope resistance *
2.7
25
27
17.9
8.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
25
50
75
100
TC [°C]
125
150
Typ. NTC resistance vs. temperature
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Outlines E3-Pack
30/31/32 26/27
17
10
7
1/2
3/4
5/6
28/29
23
8/9
22
13
11/12
20
14/15
18
19
33/34/35
16
24/25
21
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Rectifier
200
150
IF
100
[A]
50
TVJ = 125°C
TVJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
Fig. 3 I2t versus time per diode
Fig. 5 Max. forward current
versus case temperature
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
Ri
0.102
0.0028
0.0776
0.07
0.1768
0.036
0.1136
0.07
i
1
t [s]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Brake IGBT
100
100
VGE = 15 V
80
IC
VGE = 15 V
17 V
19 V
100
13 V
11 V
80
60
IC
TVJ = 25°C
[A] 40
80
TVJ = 125°C
60
IC
9V
[A] 40
TVJ = 125°C
20
[A] 40
20
0
1
2
3
1
2
VCE [V]
20
3
4
6
8
10
12
VCE [V]
VGE [V]
Fig. 2 Typ. output characteristics
Fig. 3 Typ. tranfer characteristics
6.0
10
IC = 50 A
VCE = 600 V
TVJ = 25°C
0
0
Fig. 1 Typ. output characteristics
TVJ = 125°C
20
0
0
60
RG = 15
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
8
15
5.5
Eoff
6
VGE
E
10
[V]
E 5.0
Eoff
[mJ] 4
[mJ]
2
0
Eon
0
0
40
80
120
160
200
IC =
50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
4.5
5
0
20
40
60
80
100
4.0
12
16
20
24
28
32
RG [ ]
QG [nC]
IC [A]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
Fig. 6 Typ. switching energy
versus gate resistance
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Brake Diode
60
6
70
TVJ = 125°C
60
60 A
50
TVJ = 125°C
40
IF
[A]
[μC]
20
VR = 600 V
4
Qrr
60 A
VR = 600 V
5
30 A
3
15 A
30 A
IRM 40
15 A
[A] 30
TVJ = 125°C
20
TVJ = 25°C
2
10
0
0
1
2
1
400
3
800
600
800
1000
diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
Fig.3 Typ. peak reverse current
IRM versus di/dt
2.0
700
600
TVJ = 125°C
15 A
TVJ = 125°C
VR = 600 V
VR = 600 V
1.5
500
trr
0
400
1000
diF /dt [A/μs]
VF [V]
Fig. 1 Typ. Forward current
IF versus VF
600
400
60 A
30 A
Erec
30 A
1.0
[ns] 300
60 A
[mJ]
15 A
200
0.5
100
0
400
600
800
1000
600
800
1000
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec versus di/dt
Fig. 5 Typ. recovery time
trr versus di/dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
0.0
400
2
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Inverter IGBT
VGE = 15 V
140
120
120
100
100
IC
80
IC
TVJ = 25°C
[A]
60
TVJ = 125°C
13 V
VGE = 15 V
17 V
19 V
140
140
11 V
120
100
TVJ = 125°C
IC
80
[A] 60
9V
80
[A] 60
40
40
40 TVJ = 125°C
20
20
20
0
0
0
TVJ = 25°C
0
1
2
3
0
1
2
VCE [V]
Fig. 1 Typ. output characteristics
3
4
6
IC = 75 A
VCE = 600 V
Fig. 3 Typ. tranfer characteristics
9
RG = 10
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
12
Eoff
8
10
VGE
E
10
[V]
E
8
[mJ] 6
[mJ]
Eon
Eoff
4
5
IC =
75 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
7
Eon
2
0
6
0
0
40
80 120 160 200 240 280
12
Fig. 2 Typ. output characteristics
14
15
10
VGE [V]
16
20
8
VCE [V]
0
40
80
120
160
8
12
16
20
24
RG [ ]
QG [nC]
IC [A]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
Fig. 6 Typ. switching energy
versus gate resistance
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719
MIXA81WB1200TEH
tentative
Inverter Diode
200
160
24
TVJ = 125°C
VR = 600 V
20
200 A
TVJ = 125°C
140
200 A
VR = 600 V
150
100 A
120
Qrr 16
IF
IRM
100
100 A
[A]
[μC] 12
50
[A]
80
TVJ = 125°C
50 A
TVJ = 25°C
0
0.0
0.5
1.0
50 A
100
8
1.5
2.0
2.5
60
4
1200
3.0
1600
1800
40
1200
2000
1600
1800
2000
diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
Fig.3 Typ. peak reverse current
IRM versus di/dt
8
700
TVJ = 125°C
200 A
TVJ = 125°C
VR = 600 V
600
VR = 600 V
6
500
trr
1400
diF /dt [A/μs]
V F [V ]
Fig. 1 Typ. Forward current
IF versus VF
1400
200 A
400
100 A
Erec
4
100 A
[ns] 300
[mJ]
50 A
50 A
200
2
100
0
1200
1400
1600
1800
2000
1400
1600
1800
2000
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec versus di/dt
Fig. 5 Typ. recovery time
trr versus di/dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
0
1200
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719