MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE(sat) = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA81WB1200TEH Backside: isolated 30/31/32 26/27 17 10 7 1/2 3/4 28/29 5/6 23 8/9 22 13 11/12 20 14/15 18 19 33/34/35 16 24/25 21 Features / Advantages: Applications: Package: E3-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 100 µA VR = 1600 V TVJ = 125°C 0.5 mA I F = 120 A TVJ = 25°C 1.23 V V I F = 240 A I F = 120 A TVJ = 125°C 1.19 T VJ = 150 °C 290 A TVJ = 150 °C 0.85 V I F = 240 A V TC = 80°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved d=⅓ for power loss calculation only Ptot V 2.7 mΩ 0.45 K/W K/W 0.10 TC = 25°C 280 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.20 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.30 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.02 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.10 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 7.20 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 6.98 kA²s TVJ = 150 °C 5.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 600 V f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 5.04 kA²s 26 pF 20120719 MIXA81WB1200TEH tentative Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient collector gate voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25°C 90 A TC = 80 °C 60 A 290 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 2 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 55 A t d(on) turn-on delay time I C = 55 A; VGE= 15 V TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C inductive load 5.9 TVJ = 125°C VGE = ±15 V; R G = 15 Ω short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 15 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.1 mA mA 0.1 nA 165 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125°C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 55 A VGE = ±15 V; R G = 15 Ω 5.4 V TVJ = 125°C 150 A 10 µs A 200 0.43 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 44 A TC = 80 °C 29 A TVJ = 25°C 2.20 V TVJ = 25°C 0.1 mA TVJ = 125°C 2 mA I F 80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 600 A/µs t rr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 600 V 30 A V 1.90 3.5 µC 30 A TVJ = 125°C 350 ns 0.9 mJ 1.2 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20120719 MIXA81WB1200TEH tentative Ratings Inverter IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient collector gate voltage ±30 V I C25 collector current TVJ = I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage IC = 3 I CES collector emitter leakage current VCE = VCES; VGE = 0 V I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A t d(on) turn-on delay time TC = 25°C 120 A TC = 80 °C 84 A 390 W 2.1 V TC = 25°C I C = 75 A; VGE = 15 V mA; VGE = VCE TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 25°C current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM inductive load 5.9 TVJ = 125°C VGE = ±15 V; R G = 10 Ω short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 10 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 6.5 V 0.2 mA mA 0.6 nA 230 nC 70 ns 40 ns 250 ns 100 ns 6.8 mJ 8.3 mJ TVJ = 125°C VCEmax = 1200 V SCSOA V 500 VCE = 600 V; IC = 75 A VGE = ±15 V; R G = 10 Ω 5.4 TVJ = 25°C TVJ = 125°C tr typ. 25°C TVJ = 125°C 225 A 10 µs A 300 0.32 K/W K/W 0.10 Inverter Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 135 A TC = 80 °C 90 A 2.20 V I F 80 VF forward voltage I F = 100 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved * TVJ = 25°C -di F /dt = 1600 A/µs IF = 100 A; VGE = 0 V TVJ = 125°C mA * mA 12.5 µC TVJ = 125°C VR = 600 V V 1.90 100 A 350 ns 4 mJ 0.4 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20120719 MIXA81WB1200TEH tentative Package Ratings E3-Pack Symbol I RMS Definition Conditions min. RMS current per terminal Tstg storage temperature -40 T VJ virtual junction temperature -40 Weight mounting torque VISOL isolation voltage R pin-chip Unit A 125 °C 150 °C 3 t = 1 second 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute d Spb/Apb max. 300 270 MD d Spp/App typ. 6 3600 V 3000 V 6.0 mm terminal to backside 12.0 mm 5 resistance pin to chip 2D Data Matrix XXX XX-XXXXX UL Part number Ordering Standard Nm terminal to terminal creepage distance on surface | striking distance through air Logo g mΩ Part number = = = = = = = = = M I X A 81 WB 1200 T EH YYWWx Date Code Location Part Number MIXA81WB1200TEH Module IGBT XPT IGBT Gen 1 / std Current Rating [A] 6-Pack + 3~ Rectifier Bridge & Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E3-Pack Marking on Product MIXA81WB1200TEH Delivery Mode Box Quantity 5 Code No. 512760 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150°C * on die level Rectifier Brake IGBT Brake Diode Inverter IGBT Inverter Diode 102 0 V 0 max threshold voltage 0.85 1.1 1.2 1.1 1.35 V R 0 max slope resistance * 2.7 25 27 17.9 8.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Outlines E3-Pack 30/31/32 26/27 17 10 7 1/2 3/4 5/6 28/29 23 8/9 22 13 11/12 20 14/15 18 19 33/34/35 16 24/25 21 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Rectifier 200 150 IF 100 [A] 50 TVJ = 125°C TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 VF [V] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180° Fig. 3 I2t versus time per diode Fig. 5 Max. forward current versus case temperature 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 Ri 0.102 0.0028 0.0776 0.07 0.1768 0.036 0.1136 0.07 i 1 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Brake IGBT 100 100 VGE = 15 V 80 IC VGE = 15 V 17 V 19 V 100 13 V 11 V 80 60 IC TVJ = 25°C [A] 40 80 TVJ = 125°C 60 IC 9V [A] 40 TVJ = 125°C 20 [A] 40 20 0 1 2 3 1 2 VCE [V] 20 3 4 6 8 10 12 VCE [V] VGE [V] Fig. 2 Typ. output characteristics Fig. 3 Typ. tranfer characteristics 6.0 10 IC = 50 A VCE = 600 V TVJ = 25°C 0 0 Fig. 1 Typ. output characteristics TVJ = 125°C 20 0 0 60 RG = 15 VCE = 600 V VGE = ±15 V TVJ = 125°C 8 15 5.5 Eoff 6 VGE E 10 [V] E 5.0 Eoff [mJ] 4 [mJ] 2 0 Eon 0 0 40 80 120 160 200 IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 4.5 5 0 20 40 60 80 100 4.0 12 16 20 24 28 32 RG [ ] QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Brake Diode 60 6 70 TVJ = 125°C 60 60 A 50 TVJ = 125°C 40 IF [A] [μC] 20 VR = 600 V 4 Qrr 60 A VR = 600 V 5 30 A 3 15 A 30 A IRM 40 15 A [A] 30 TVJ = 125°C 20 TVJ = 25°C 2 10 0 0 1 2 1 400 3 800 600 800 1000 diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig.3 Typ. peak reverse current IRM versus di/dt 2.0 700 600 TVJ = 125°C 15 A TVJ = 125°C VR = 600 V VR = 600 V 1.5 500 trr 0 400 1000 diF /dt [A/μs] VF [V] Fig. 1 Typ. Forward current IF versus VF 600 400 60 A 30 A Erec 30 A 1.0 [ns] 300 60 A [mJ] 15 A 200 0.5 100 0 400 600 800 1000 600 800 1000 diF /dt [A/μs] diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec versus di/dt Fig. 5 Typ. recovery time trr versus di/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.0 400 2 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Inverter IGBT VGE = 15 V 140 120 120 100 100 IC 80 IC TVJ = 25°C [A] 60 TVJ = 125°C 13 V VGE = 15 V 17 V 19 V 140 140 11 V 120 100 TVJ = 125°C IC 80 [A] 60 9V 80 [A] 60 40 40 40 TVJ = 125°C 20 20 20 0 0 0 TVJ = 25°C 0 1 2 3 0 1 2 VCE [V] Fig. 1 Typ. output characteristics 3 4 6 IC = 75 A VCE = 600 V Fig. 3 Typ. tranfer characteristics 9 RG = 10 VCE = 600 V VGE = ±15 V TVJ = 125°C 12 Eoff 8 10 VGE E 10 [V] E 8 [mJ] 6 [mJ] Eon Eoff 4 5 IC = 75 A VCE = 600 V VGE = ±15 V TVJ = 125°C 7 Eon 2 0 6 0 0 40 80 120 160 200 240 280 12 Fig. 2 Typ. output characteristics 14 15 10 VGE [V] 16 20 8 VCE [V] 0 40 80 120 160 8 12 16 20 24 RG [ ] QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 MIXA81WB1200TEH tentative Inverter Diode 200 160 24 TVJ = 125°C VR = 600 V 20 200 A TVJ = 125°C 140 200 A VR = 600 V 150 100 A 120 Qrr 16 IF IRM 100 100 A [A] [μC] 12 50 [A] 80 TVJ = 125°C 50 A TVJ = 25°C 0 0.0 0.5 1.0 50 A 100 8 1.5 2.0 2.5 60 4 1200 3.0 1600 1800 40 1200 2000 1600 1800 2000 diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig.3 Typ. peak reverse current IRM versus di/dt 8 700 TVJ = 125°C 200 A TVJ = 125°C VR = 600 V 600 VR = 600 V 6 500 trr 1400 diF /dt [A/μs] V F [V ] Fig. 1 Typ. Forward current IF versus VF 1400 200 A 400 100 A Erec 4 100 A [ns] 300 [mJ] 50 A 50 A 200 2 100 0 1200 1400 1600 1800 2000 1400 1600 1800 2000 diF /dt [A/μs] diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec versus di/dt Fig. 5 Typ. recovery time trr versus di/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 1200 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120719