MIXA30W1200TMH Six-Pack XPT IGBT VCES =1200 V IC25 = 43 A VCE(sat)= 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: •High level of integration - only one power semiconductor module required for the whole drive •Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge -square RBSOA @ 3x IC - low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •Temperature sense included •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Pumps, Fans •Washing machines •Air-conditioning system •Inverter and power supplies •"Mini" package •Assembly height is 17 mm •Insulated base plate •Pins suitable for wave soldering and PCB mounting •Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp •UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101102b 1-6 MIXA30W1200TMH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 43 30 A A TC = 25°C 150 W collector emitter saturation voltage IC = 25 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 25 A TVJ= 25°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 39 W; VCEK = 1200 V TVJ=125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 39 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 W typ. 1.8 2.1 5.4 TVJ=125°C 5.9 6.5 V 0.02 0.3 0.15 mA mA 500 nA 76 nC 70 40 250 100 2.5 3.0 ns ns ns ns mJ mJ 75 100 A A 0.84 0.24 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy max. Unit TVJ= 25°C 1200 V TC = 25°C TC = 80°C 44 29 A A IF = 30 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.95 2.2 V V TVJ=125°C 3.5 30 350 0.9 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = -600 A/µs IF = 30 A; VGE = 0 V typ. (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. µC A ns mJ 1.2 0.4 K/W K/W 20101102b 2-6 MIXA30W1200TMH Temperature Sensor NTC Symbol Definitions Conditions R25 B25/50 resistance min. TC = 25°C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K 100000 10000 R [Ω] 1000 100 10 0 25 50 75 100 125 150 TC [°C] Typ. NTC resistance vs. temperature Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air Conditions Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. 40 80 12.7 12 N mm mm 35 TC = 25°C unless otherwise stated g 20101102b 3-6 MIXA30W1200TMH Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) Part number M = Module I = IGBT X = XPT A = standard 30 = Current Rating [A] W = 6-Pack 1200 = Reverse Voltage [V] T = NTC MH = MiniPack2 Ordering Part Number Marking on Product Standard MIXA 30 W 1200 TMH MIXA30W1200TMH IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 20 470414 20101102b 4-6 MIXA30W1200TMH IGBT T1 - T6 50 50 VGE = 15 V 40 40 30 TVJ = 25°C IC IC TVJ = 125°C [A] 20 30 TVJ = 125°C 0 1 2 0 3 VCE [V] 0 1 2 4 5 80 100 20 IC = 25 A VCE = 600 V 40 15 IC 30 VGE 10 [V] 20 TVJ = 125°C 10 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 20 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 6 4.0 Eon RG = 39 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 5 60 QG [nC] VGE [V] E 3 VCE [V] Fig. 2 Typ. output characteristics 50 0 9V 10 Fig. 1 Typ. output characteristics [A] 11 V [A] 20 10 0 13 V VGE = 15 V 17 V 19 V 3.5 3.0 Eoff 4 2.5 E [mJ] 3 [mJ] 2 Eoff Eon IC = 25 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.5 1.0 1 0 0.5 0 10 20 30 40 50 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.0 20 40 60 80 100 120 140 160 RG [Ω ] Fig. 6 Typ. switching energy vs. gate resistance 20101102b 5-6 MIXA30W1200TMH Diode D1 - D6 60 7 50 6 40 5 TVJ = 125°C IF Qrr 30 [A] 60 A 4 30 A [µC] 20 3 TVJ = 125°C 15 A TVJ = 25°C 10 0 0.0 0.5 1.0 2 1.5 VF [V] 2.0 2.5 1 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] 3.0 Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 70 60 700 TVJ = 125°C 60 A VR = 600 V 500 30 A trr 40 TVJ = 125°C 600 VR = 600 V 50 IRR VR = 600 V 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] 1.6 15 A 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt 2.0 60 A 30 A Fig. 10 Typ. recovery time trr versus di/dt 10 TVJ = 125°C VR = 600 V Diode 60 A 1 30 A Erec 1.2 [mJ] IGBT ZthJC IGBT [K/W] 0.8 15 A 0.1 1 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig.11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.01 0.001 0.01 0.18 FRD ti Ri Ri ti 0.0025 0.3413 0.0025 2 0.14 0.03 0.2171 0.03 3 0.36 0.03 0.3475 0.03 4 0.16 0.08 0.2941 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20101102b 6-6