IXA37IF1200HJ I C25 = = VCES VCE(sat)typ = XPT IGBT Copack 58 A 1200 V 1.8 V C (2) Part number IXA37IF1200HJ (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Housing: ISOPLUS247 ●rIndustry standard outline ●rDCB isolated backside ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant IGBT Ratings Symbol Definition Conditions VCES Collector emitter voltage VGE = 0 V VGES IC25 min. max. Unit 1200 V Maximum DC gate voltage TVJ = 25°C ±20 V Collector current TC = 25°C 58 A TC = 90°C 37 A TVJ = 25°C 195 W TVJ = 25°C 0.1 mA I C90 Ptot Total power dissipation I CES Collector emitter leakage current VCE = VCES ; VGE = 0 V I GES Gate emitter leakage current VCE = 0 V; VGE = ±20 V VCE(sat) Collector emitter saturation voltage I C = 35 A; VGE = 15 V TVJ = 125 °C Gate emitter threshold voltage I C = 1.5 mA; VGE = VCE Q Gon Total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A t d(on) Turn-on delay time tr Current rise time t d(off) Turn-off delay time Inductive load tf Current fall time VCE = 600 V; IC = 35 A Eon Turn-on energy per pulse VGE = ±15 V; R G = 27 Ω Eoff Turn-off energy per pulse Reverse bias safe operation area 15 V; R G = 27 Ω 1.8 TVJ = 125 °C 2.1 TVJ = 125 °C 6 nA 2.1 V V 6.5 V 106 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ mJ TVJ = 125°C 105 A TVJ = 125°C 10 µs VCEK = 1200 V SCSOA t SC Short circuit duration VCE = 900 V; VGE = ±15 V I SC Short circuit current RG = 27 Ω ; non-repetitive RthJC Thermal resistance juntion to case © 2010 IXYS all rights reserved TVJ = 25°C mA 500 4.1 VGE = Short circuit safe operation area IXYS reserves the right to change limits, conditions and dimensions. 0.1 5.4 VGE(th) RBSOA typ. TVJ = 25°C Data according to IEC 60747and per diode unless otherwise specified 140 A 0.64 K/W 20100623c IXA37IF1200HJ Diode Ratings Symbol Definition Conditions I F25 Forward current TC = 25°C 42 A TC = 90°C 25 A 2.2 V I F 90 VF I F = 30 A Forward voltage Q rr Reverse recovery charge I RM Maximum reverse recovery current t rr Reverse recovery time Erec(off) Reverse recovery losses at turn-off RthJC Thermal resistance juntion to case min. typ. Unit TVJ = 25°C 1.95 TVJ = 125 °C 1.95 V 3.5 µC 30 A VR = 600 V di F /dt = - 600 A/µs; max. TVJ = 125 °C I F = 30 A 350 ns 0.9 mJ 1.2 K/W Equivalent Circuits for Simulation I R0 V0 Ratings Symbol Definition V0 R0 V0 R0 min. IGBT TVJ = 150 °C Diode TVJ = 150 °C R1 R2 C1 R3 C2 typ. max. Unit 1.1 V 39 mΩ 1.25 V 28.3 mΩ R4 C3 C4 IGBT Diode R1 0.152 0.3413 R2 0.0724 0.2171 R3 0.3078 0.3475 R4 0.1078 0.2941 τ1 τ2 τ3 τ4 0.0025 0.0025 0.03 0.03 0.03 0.03 0.08 0.08 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100623c IXA37IF1200HJ Package ISOPLUS247 Ratings Conditions min. Definition TVJ Virtual junction temperature -55 150 °C Tstg Storage temperature -55 150 °C RthCH Thermal resistance case to heatsink Weight FC Mounting force with clip V ISOL Isolation voltage 20 t = 1 second 3600 t = 1 minute 3000 typ. Unit Symbol max. 0.25 K/W 6 g 120 N V V dS Creapage distance on surface mm dA Striking distance through air mm Product Marking Logo Part number I X A 37 IF 1200 HJ IXYS Part No. Date Code UL listed abcd = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] ISOPLUS247 (3) Order Code Ordering Standard Part Name IXA 37 IF 1200 HJ IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Marking on Product IXA37IF1200HJ Delivering Mode Tube Base Qty Code Key 30 507993 Data according to IEC 60747and per diode unless otherwise specified 20100623c IXA37IF1200HJ Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-foberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100623c IXA37IF1200HJ 70 70 VGE = 15 V 60 60 50 50 TVJ = 25°C IC 40 11 V TVJ = 125°C IC 40 [A] 30 13 V VGE = 15 V 17 V 19 V [A] 30 TVJ = 125°C 20 20 10 10 0 9V 0 0 1 2 3 0 1 2 3 4 5 VCE [V] VCE [V] Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 70 20 IC = 35 A VCE = 600 V 60 15 50 IC 40 VGE [A] 30 10 [V] 20 5 TVJ = 125°C 10 TVJ = 25°C 0 0 5 6 7 8 9 10 11 12 0 13 20 40 10 6 Eon RG = 27 VCE = 600 V VGE = ±15 V TVJ = 125°C 100 120 140 E IC = 35 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 5 Eoff 6 [mJ] 80 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 8 60 QG [nC] VGE [V] E [mJ] 4 Eoff 4 2 0 0 20 40 60 80 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 3 20 40 60 80 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per diode unless otherwise specified 20100623c IXA37IF1200HJ 60 7 50 6 40 5 TVJ = 125°C IF VR = 600 V 60 A Qrr 30 4 [A] 30 A [µC] 20 3 TVJ = 125°C 15 A TVJ = 25°C 10 0 0.0 0.5 1.0 2 1.5 2.0 2.5 1 300 3.0 400 500 VF [V] 700 800 900 1000 1100 diF /dt [A/µs] Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 70 700 TVJ = 125°C 60 60 A VR = 600 V 500 30 A trr 40 TVJ = 125°C 600 VR = 600 V 50 IRR 600 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 60 A 30 A 15 A 0 300 900 1000 1100 400 500 diF /dt [A/µs] 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 10 2.0 TVJ = 125°C VR = 600 V 1.6 60 A 30 A Erec 1.2 [mJ] Diode 1 ZthJC 0.8 15 A IGBT [K/W] 0.1 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20100623c