MIXA60HU1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 85 A VCE(sat) = 1.8 V H~ Bridge, Buck / Boost - Combination Part number MIXA60HU1200VA 6 Backside: isolated 10 2 1 8 3 5 4 7 9 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● Switched-mode power supplies ● Switched reluctance motor drive ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA60HU1200VA preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 55 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V gate emitter leakage current VGE = ±20 V total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 2.1 V 6.5 V 0.5 mA TVJ = 25°C TVJ = 25°C 55 A VGE = ±15 V; R G = 15 Ω VGE = ±15 V; R G = 15 Ω VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 15 Ω; non-repetitive thermal resistance junction to case R thCH thermal resistance case to heatsink A A 1.8 V 2.1 5.4 5.9 mA 0.2 nA 165 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125 °C VCEmax = 1200 V I SC V 85 W 55 A short circuit safe operating area R thJC ±30 60 TVJ = 125 °C SCSOA short circuit current V 500 inductive load VCE = ±20 290 TVJ = 125 °C Q G(on) Unit V TC = 25°C TVJ = 25°C I GES max. 1200 TC = 80 °C TVJ = 125 °C I CM typ. TVJ = 125 °C 150 A 10 µs A 200 0.5 K/W K/W 0.30 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 88 A TC = 80 °C 59 A TVJ = 25°C 2.20 V 0.3 mA I F 80 60 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved VR = 600 V -di F /dt = 1200 A/µs IF = 60 A; VGE = 0 V TVJ = 125°C V 1.95 1.2 mA 8 µC 60 A 350 ns 2.5 mJ 0.6 K/W 0.20 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130906a MIXA60HU1200VA preliminary Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 °C -40 150 °C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL mm 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code Location Part number M I X A 60 HU 1200 VA yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number MIXA60HU1200VA Equivalent Circuits for Simulation V0 6.0 terminal to backside t = 1 second t = 1 minute I terminal to terminal creepage distance on surface | striking distance through air isolation voltage R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] H~ Bridge, Buck / Boost - Combination Reverse Voltage [V] V1-A-Pack Marking on Product MIXA60HU1200VA Delivery Mode Box IGBT Diode threshold voltage 1.1 1.22 R 0 max slope resistance * 25.1 13 © 2013 IXYS all rights reserved Quantity 10 Code No. 511602 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. g V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA60HU1200VA preliminary Outlines V1-A-Pack 15,8 ±1 0,5 +0,2 0,25 50 3,3 ±0,5 2 ±0,25 17 13 R2 35 26 63 31,6 ±0,2 38,6 14 ±0,3 7 ±0,3 4x45° 14 ±0,3 7 ±0,3 5 4 3 2 0,5 23,5 15 5,5 10 9 8 7 6 25,75 ±0,1 R R 5,5 11 ±0,3 11 ±0,3 1 R1 ±0,15 51,5 ±0,3 6 10 2 1 8 3 5 4 7 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 9 Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA60HU1200VA preliminary IGBT 100 100 TVJ = 125°C 25°C 80 100 13 V VGE = 15 V 17 V 19 V 80 11 V 80 60 IC 60 IC [A] 40 [A] 40 20 20 IC 60 9V [A] 40 20 TVJ = 125°C 0 0 0 1 2 TVJ = 25°C 0 0 3 TVJ = 125°C 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE [V] VCE [V] VGE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics 10 20 IC = 50 A VCE = 600 V 8 15 VGE E 6.0 Eon RG = 15 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff Eoff 5.5 6 E 10 5.0 [mJ] 4 [V] [mJ] 5 4.5 0 0 0 50 100 150 4.0 0 200 20 40 60 80 100 120 12 16 20 24 28 32 RG [Ohm] IC [A] QG [nC] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 2 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a MIXA60HU1200VA preliminary Diode 14 120 TVJ = 125°C 25°C 100 90 TVJ = 125°C VR = 600 V 12 80 IC Qrr 60 [A] TVJ = 125°C VR = 600 V 80 10 120A 70 8 60 A IRR 60 120A 60 A 30 A [A] 50 [μC] 6 40 30 A 40 4 20 30 2 0 0 1 2 3 600 800 1000 20 600 1200 -diF /dt [A/μs] VCE [V] 1200 Fig. 3 Typ. peak reverse current IRM versus di/dt 700 4.0 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V 600 trr 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 800 120A 3.2 500 Erec [ns] 400 120A 60 A 2.4 30 A [mJ] 1.6 60 A 300 0.8 30 A 200 600 800 1000 0.0 600 1200 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 800 1000 1200 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 Ri ti [K/W] [s] [K/W] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.137 0.1 0.233 0.13 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130906a