IXA220I650NA tentative XPT IGBT VCES = 650 V I C25 = 255 A VCE(sat) = 1.6 V Single IGBT Part number IXA220I650NA Backside: isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Either emitter terminal can be used as main or Kelvin emitter IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708 IXA220I650NA tentative Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 V 5.5 V 0.1 mA I C = 3.2 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.6 TVJ = 125 °C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 300 V; VGE = 15 V; IC = 200 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area V 1.9 TVJ = 125 °C 4 4.8 mA 0.1 500 inductive load TVJ = 125 °C 300 V; IC = 200 A VGE = ±15 V; R G = 3.9 Ω VGE = ±15 V; R G = 3.9 Ω short circuit safe operating area VCEmax = 650 V t SC short circuit duration VCE = 360 V; VGE = ±15 V R G = 3.9 Ω; non-repetitive nA 280 nC 30 ns 50 ns 100 ns 40 ns 2 mJ 7.6 mJ TVJ = 125 °C VCEmax = 650 V SCSOA thermal resistance case to heatsink A 1.8 gate emitter threshold voltage R thCH V A VGE(th) thermal resistance junction to case ±30 255 W I C = 200 A; VGE = 15 V I SC V 156 collector emitter saturation voltage R thJC ±20 625 VCE(sat) short circuit current Unit V TC = 25°C total power dissipation VCE = max. 650 TC = 80 °C Ptot I CM typ. TVJ = 125 °C 400 A 10 µs A 800 0.2 K/W K/W 0.10 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 650 V I F25 forward current TC = 25°C tbd A TC = 80 °C tbd A TVJ = 25°C tbd V * mA I F 80 VF forward voltage IF = A IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C * not applicable, see Ices at IGBT V tbd * mA tbd µC tbd A TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case tbd K/W R thCH thermal resistance case to heatsink K/W IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved VR = 300 V -di F /dt = IF = A/µs A; VGE = 0 V TVJ = 125°C tbd ns tbd mJ Data according to IEC 60747and per semiconductor unless otherwise specified 20140708 IXA220I650NA tentative Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) Weight 30 g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Part description Product Marking I X A 220 I 650 NA Part No. Logo XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard V0 = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Single IGBT Reverse Voltage [V] SOT-227B (minibloc) Assembly Code Ordering Number IXA220I650NA Equivalent Circuits for Simulation I 10.5 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product IXA220I650NA Delivery Mode Tube IGBT threshold voltage 1.1 V R 0 max slope resistance * 5.3 mΩ © 2014 IXYS all rights reserved Code No. 514555 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20140708 IXA220I650NA tentative Outlines SOT-227B (minibloc) (C) 3 (G) 2 (E) 1+4 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708