MIXA150Q1200VA

MIXA150Q1200VA
preliminary
XPT IGBT Module
VCES
=
1200 V
I C25
=
220 A
VCE(sat) =
1.8 V
Buck Chopper
Part number
MIXA150Q1200VA
Backside: isolated
1/2
9
10
6/7
4/5
Features / Advantages:
Applications:
Package: V1-A-Pack
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● Switched-mode power supplies
● Switched reluctance motor drive
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Signature
Date
PM _________________________/______________
R+D _________________________/_____________
QA _________________________/______________
MP _________________________/______________
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130906a
MIXA150Q1200VA
preliminary
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
25°C
TC = 25°C
I C80
V
6.5
V
0.1
mA
gate emitter threshold voltage
IC =
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
1.8
5.4
5.9
TVJ = 25°C
TVJ = 125 °C
I GES
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 150 A
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
VGE = ±15 V; R G = 4.7 Ω
SCSOA
short circuit safe operating area
VCEmax = 1200 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
R G = 4.7 Ω; non-repetitive
thermal resistance case to heatsink
mA
0.1
500
TVJ = 125 °C
600 V; IC = 150 A
VGE = ±15 V; R G = 4.7 Ω
nA
470
nC
70
ns
40
ns
250
ns
100
ns
14
mJ
16
mJ
TVJ = 125 °C
VCEmax = 1200 V
R thCH
V
2.1
TVJ = 125 °C
thermal resistance junction to case
A
2.1
VGE(th)
I SC
V
A
TVJ = 25°C
R thJC
±30
220
W
I C = 150 A; VGE = 15 V
short circuit current
V
150
collector emitter saturation voltage
VCE =
±20
695
VCE(sat)
inductive load
Unit
V
TC = 25°C
total power dissipation
6 mA; VGE = VCE
max.
1200
TC = 80 °C
Ptot
I CM
typ.
TVJ = 125 °C
450
A
10
µs
A
600
0.18 K/W
K/W
0.20
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
190
A
TC = 80 °C
130
A
TVJ = 25°C
2.20
V
0.3
mA
I F 80
VF
forward voltage
I F = 150 A
IR
reverse current
VR = VRRM
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
VR = 600 V
-di F /dt = 2500 A/µs
IF = 150 A; VGE = 0 V
TVJ = 125°C
V
1.95
0.8
mA
20
µC
175
A
350
ns
10
mJ
0.28 K/W
0.20
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20130906a
MIXA150Q1200VA
preliminary
Package
Ratings
V1-A-Pack
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
100
Unit
A
-40
125
°C
-40
150
°C
2.5
Nm
Weight
MD
37
2
mounting torque
d Spp/App
d Spb/Apb
VISOL
mm
12.0
mm
3600
V
3000
V
50/60 Hz, RMS; IISOL ≤ 1 mA
Date Code Location
Part number
M
I
X
A
150
Q
1200
VA
yywwA
Part Number (Typ)
Lot No.:
2D Data Matrix
Ordering
Standard
Part Number
MIXA150Q1200VA
Equivalent Circuits for Simulation
V0
6.0
terminal to backside
t = 1 second
t = 1 minute
I
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
R0
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Buck Chopper
Reverse Voltage [V]
V1-A-Pack
Marking on Product
MIXA150Q1200VA
Delivery Mode
Box
IGBT
Diode
threshold voltage
1.1
1.25
V
R 0 max
slope resistance *
9.2
5.7
mΩ
© 2013 IXYS all rights reserved
Quantity
10
Code No.
512328
T VJ = 150 °C
* on die level
V 0 max
IXYS reserves the right to change limits, conditions and dimensions.
g
Data according to IEC 60747and per semiconductor unless otherwise specified
20130906a
MIXA150Q1200VA
preliminary
Outlines V1-A-Pack
0,5 +0,2
15,8 ±1
0,25
3,3
±0,5
2
±0,25
17
13
R2
35
26
63
31,6
50 ±0,2
38,6
14 ±0,3
14 ±0,3
7 ±0,3
7 ±0,3
4x45°
5
4
3
2
23,5
15
5,5
10
9
8
7
6
±0,1
R
R
5,5
11 ±0,3
11 ±0,3
1
R1
25,75 ±0,15
0,5
51,5 ±0,3
1/2
9
10
6/7
4/5
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130906a
MIXA150Q1200VA
preliminary
IGBT
300
300
VGE = 15 V
250
250
200
200
IC
TVJ = 125°C
[A]
11 V
250
200
IC
TVJ = 25°C
150
300
13 V
VGE = 15 V
17 V
19 V
IC
TVJ = 125°C
150
[A]
9V
150
[A]
100
100
100
50
50
50
TVJ = 125°C
0
0
0
1
2
3
0
0
1
VCE [V]
Fig. 1 Typ. output characteristics
20
2
3
4
5
E
22
RG = 4.7
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
18
E
Eon
Eoff
16
[mJ]
14
Eon
10
Eoff
5
0
Erec
12
0
0
100 200 300 400 500 600
10
0
QG [nC]
Fig. 4 Typ. turn-on gate charge
10 11 12 13
IC = 150 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
20
20
[mJ] 15
5
9
Fig. 3 Typ. tranfer characteristics
10
[V]
8
Fig. 2 Typ. output characteristics
25
VGE
7
VGE [V]
30
15
6
VCE [V]
35
IC = 150 A
VCE = 600 V
TVJ = 25°C
50
100 150 200 250 300
IC [A]
Fig. 5 Typ. switching energy
versus collector current
0
2
4
6
8
10 12 14 16
RG [ ]
Fig. 6 Typ. switching energy
versus gate resistance
1
ZthJC
0.1
[K/W]
Ri
0.027
0.028
0.06
0.065
0.01
0.001
0.01
0.1
1
ti
0.002
0.03
0.03
0.08
10
t [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130906a
MIXA150Q1200VA
preliminary
Diode
300
250
200
IC
150
[A]
100
TVJ = 125°C
50
TVJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCE [V]
Fig. 2 Typ. reverse recovery
charge Qrr versus di/dt
Fig. 1 Typ. Forward current
versus VF
Fig. 3 Typ. peak reverse current
IRM versus di/dt
11
10
TVJ = 125°C
4.7
VR = 600 V
Erec 9
[mJ] 8
15
7
27
6
1600 1800 2000 2200 2400 2600
diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
Fig. 6 Typ. recovery energy
Erec versus -di/dt
1
ZthJC
0.1
[K/W]
0.01
0.001
Ri
ti
0.054 0.002
0.05
0.03
0.096 0.03
0.08
0.08
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130906a