MCD72-12io8B

MCD72-12io8B
Thyristor Module
VRRM
= 2x 1200 V
I TAV
=
85 A
VT
=
1.34 V
Phase leg
Part number
MCD72-12io8B
Backside: isolated
3
1
5 2
Features / Advantages:
Applications:
Package: TO-240AA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD72-12io8B
Ratings
Rectifier
Conditions
Symbol
V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max.
1300
Unit
V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
V
I R/D
reverse current, drain current
VR/D = 1200 V
TVJ = 25°C
200
µA
VR/D = 1200 V
TVJ = 125°C
5
mA
I T = 150 A
TVJ = 25°C
1.34
V
1.74
V
1.34
V
VT
forward voltage drop
min.
typ.
I T = 300 A
TVJ = 125 °C
I T = 150 A
I T = 300 A
I TAV
average forward current
TC = 85°C
180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.82
V
T VJ = 125 °C
85
A
180
A
TVJ = 125 °C
0.85
V
333
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.70
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.84
kA
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
1.45
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.56
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
14.5 kA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
14.0 kA²s
TVJ = 125 °C
10.4 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 125 °C
10.1 kA²s
119
t P = 300 µs
average gate power dissipation
critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ
K/W
TC = 25°C
CJ
PGAV
3.2
0.3
TVJ = 125°C; f = 50 Hz
repetitive, IT = 250 A
pF
10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT =
85 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 125°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
TVJ = -40 °C
2.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
150
mA
TVJ = -40 °C
200
mA
TVJ = 125 °C
0.2
V
10
mA
TVJ = 25 °C
450
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM
t p = 10 µs
2.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
200
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs
VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C
di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
185
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD72-12io8B
Package
Ratings
TO-240AA
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
200
Unit
A
-40
125
°C
-40
100
°C
125
°C
Weight
90
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App
d Spb/Apb
VISOL
creepage distance on surface | striking distance through air
t = 1 minute
Part Number
MCD72-12io8B
Similar Part
MCMA85PD1200TB
MCMA110PD1200TB
Equivalent Circuits for Simulation
I
V0
R0
16.0
50/60 Hz, RMS; IISOL ≤ 1 mA
Marking on Product
MCD72-12io8B
Package
TO-240AA-1B
TO-240AA-1B
* on die level
Delivery Mode
Box
9.7
mm
16.0
mm
3600
V
3000
V
Quantity
6
Code No.
453382
Voltage class
1200
1200
T VJ = 125 °C
Thyristor
V 0 max
threshold voltage
0.85
R 0 max
slope resistance *
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
13.0
t = 1 second
isolation voltage
Ordering
Standard
terminal to terminal
terminal to backside
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD72-12io8B
Outlines TO-240AA
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1
5 2
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD72-12io8B
Thyristor
250
105
2500
DC
180° sin
120°
60°
30°
VR = 0 V
50 Hz, 80% V RRM
200
2000
ITSM
IFSM
I2t
1500
TVJ = 45°C
[A]
150
104
1000
ITAVM
TVJ = 45°C
TVJ = 125°C
[A]
100
[A2s]
TVJ = 125°C
50
500
0
10-3
103
10-2
10-1
100
101
1
2
3
t [s]
6
8
0
10
0
50
t [ms]
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
150
Fig. 3 Maximum forward current
at case temperature
Fig. 2 I2t versus time (1-10 ms)
250
100
TC [°C]
RthJA
100
[K/W]
0.4
tp = 30 µs
tp = 500 µs
0.6
200
0.8
10
1
150
VG
1.2
PT
PGM = 120 W
60 W
PGAV = 8 W
[V]
1.5
2
[W]
50
1
3
0.1
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
25°C
DC
180° sin
120°
60°
30°
125°C
100
I
GD
0
0
50
100
150
0
50
100
0.01
150
0.1
1
10
IG [A]
TA [°C]
ITAVM, IFAVM [A]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
Fig. 5 Gate trigger characteristics
100
1200
RthKA
T
[K/W]
VJ
= 25°C
0.1
1200
0.15
0.2
800
10
0.25
tgd
0.3
Ptot
600
[µs]
0.4
[W]
400
1
0.5
Circuit
B6
3x MCC72 or
3x MCD72
limit
typ.
0.6
200
0.1
0
0
100
200
300
IdAVM [A]
0
50
100
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
150
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
MCD72-12io8B
Rectifier
1500
RthJA
[KW]
0.03
0.06
0.08
1000
0.1
0.15
Ptot
0.25
[W]
0
0.3
Circuit
W3
3x MCC72 or
3x MCD72
500
0
50
100
150
200
250
0.5
0
50
IRMS [A]
100
150
TA [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current
and ambient temperature
0.4
RthJC for various conduction angles d:
30°
60°
120°
0.3
180°
DC
0.2
DC
0.30
180°
0.31
120°
0.33
60°
0.35
30°
0.37
Constants for ZthJC calculation:
0.1
0
10-3
10-2
10-1
100
101
102
1
0.008
0.0019
2
0.054
0.0470
3
0.238
0.3000
103
Fig. 9 Transient thermal impedance junction to case (per thyristor)
0.6
RthJK for various conduction angles d:
30°
60°
0.5
DC
180°
120°
60°
30°
120°
180°
0.4
DC
0.3
0.50
0.51
0.53
0.55
0.57
Constants for ZthJK calculation:
0.2
0.1
0
10-3
10-2
10-1
100
101
102
103
104
1
2
3
4
0.008
0.054
0.238
0.200
0.0019
0.0470
0.3000
1.2500
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a