VUO68-14NO7

VUO68-14NO7
3~
Rectifier
Standard Rectifier Module
VRRM = 1400 V
I DAV =
70 A
I FSM =
300 A
3~ Rectifier Bridge
Part number
VUO68-14NO7
K
N
H
A
D
Features / Advantages:
Applications:
Package: ECO-PAC1
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b
VUO68-14NO7
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1500
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1400
V
IR
reverse current
VF
VR = 1400 V
TVJ = 25°C
40
µA
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.15
V
1.50
V
1.12
V
20 A
IF =
60 A
IF =
20 A
IF =
60 A
TVJ = 125 °C
TC = 105°C
I DAV
bridge output current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
1.39
V
T VJ = 150 °C
70
A
TVJ = 150 °C
0.82
V
d=⅓
for power loss calculation only
Ptot
typ.
VR = 1400 V
IF =
forward voltage drop
min.
12.2
mΩ
1.1
K/W
0.4
K/W
TC = 25°C
110
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
300
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
325
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
255
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
275
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
450
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
440
A²s
TVJ = 150 °C
325
A²s
315
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
10
pF
20140226b
VUO68-14NO7
Package
Ratings
ECO-PAC1
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
100
Unit
A
-40
150
°C
-40
125
°C
125
°C
Weight
MD
19
1.4
mounting torque
d Spp/App
d Spb/Apb
VISOL
creepage distance on surface | striking distance through air
t = 1 minute
2
Nm
terminal to terminal
6.0
mm
terminal to backside
10.0
mm
t = 1 second
isolation voltage
g
50/60 Hz, RMS; IISOL ≤ 1 mA
3000
V
2500
V
Logo
Made in Germany
YYCW Lot#
XXX XX-XXXXX
Part Number
Circuit Diagram
Date Code
Ordering
Standard
Part Number
VUO68-14NO7
Equivalent Circuits for Simulation
I
V0
R0
* on die level
Delivery Mode
Box
Quantity
25
Code No.
491780
T VJ = 150 °C
Rectifier
V 0 max
threshold voltage
0.82
R 0 max
slope resistance *
11
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Marking on Product
VUO68-14NO7
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b
VUO68-14NO7
Outlines ECO-PAC1
K
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
N
H
A
D
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b
VUO68-14NO7
Rectifier
80
300
60
250
IF
50 Hz
0.8 x V RRM
1000
VR = 0 V
2
IFSM
It
TVJ = 45°C
200
40
[A]
[A]
TVJ = 45°C
2
[A s]
TVJ = 150°C
150
20
TVJ =
125°C
150°C
0
0.4
TVJ = 25°C
0.8
1.2
1.6
TVJ = 150°C
100
10-3
2.0
100
10-2
10-1
10
t [s]
t [ms]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
Fig. 3 I t versus time per diode
30
25
2
100
RthJA:
DC =
1
0.5
0.4
0.33
0.17
0.08
35
DC =
0.6 KW
0.8 KW
20
[W]
1
VF [V]
40
Ptot
100
1
KW
2
KW
4
KW
8
KW
0.5
0.4
IF(AV)M60
0.33
0.17
[A]
15
1
80
0.08
40
10
20
5
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
0
150
25
50
TA [°C]
IdAVM [A]
75
100 125 150
TC [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
Fig. 5 Max. forward current vs.
case temperature
1.2
1.0
Constants for ZthJC calculation:
0.8
ZthJC
0.6
[K/W]
0.4
0.2
i
Rth (K/W)
ti (s)
1
0.05070
0.004
2
0.163
0.0025
3
0.2805
0.0035
4
0.363
0.02
5
0.2228
0.15
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b