DNA40U2200GU preliminary 3~ Rectifier High Voltage Standard Rectifier VRRM = 2200 V I DAV = 40 A I FSM = 370 A 3~ Rectifier Bridge Part number DNA40U2200GU Backside: isolated - ~ ~ ~ + Features / Advantages: Applications: Package: GUFP ● Low forward voltage drop ● Planar passivated chips ● Easy to mount with one screw ● Space and weight savings ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131028a DNA40U2200GU preliminary Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current VF VR = 2200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.06 V 1.28 V 0.92 V 10 A IF = 30 A IF = 10 A IF = 30 A TVJ = 150 °C TC = 90°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.23 V T VJ = 175 °C 40 A TVJ = 175 °C 0.74 V d=⅓ for power loss calculation only Ptot typ. VR = 2200 V IF = forward voltage drop min. 16.3 mΩ 4.3 K/W K/W 0.50 TC = 25°C 35 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20131028a DNA40U2200GU preliminary Package Ratings GUFP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 70 Unit A -40 175 °C -40 150 °C Tstg storage temperature -40 150 °C Weight 8.5 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL typ. terminal to terminal 6.7 terminal to backside 10.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.8 1.2 Nm 20 120 N 5.4 mm 8.0 mm 2500 V 2080 V Part number D N A 40 U 2200 GU Ordering Standard Part Number DNA40U2200GU Similar Part DMA40U1800GU GUO40-16NO1 GUO40-12NO1 GUO40-08NO1 Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA40U2200GU Package GUFP GUFP GUFP GUFP * on die level = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] 3~ Rectifier Bridge Reverse Voltage [V] GUFP Delivery Mode Tube Code No. 514970 Voltage class 1800 1600 1200 800 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.74 V R 0 max slope resistance * 13.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 14 Data according to IEC 60747and per semiconductor unless otherwise specified 20131028a DNA40U2200GU preliminary Outlines GUFP Dim. Z1 O Z2 Q A2 S1 L S2 5x b2 X2 + X1 ~ Y2 ~ ~ Y1 _ L1 +1 +2 R D ØP 5x b C A3 e 4x e A4 E A5 F Ø /2 R s1 s2 t1 t2 x1 x2 y1 y2 z1 A6 A - IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved ~ ~ ~ A A2 A3 A4 A5 A6 b b2 C D E e F L L1 O ØP Q Millimeter min typ. max 5.40 5.50 5.60 3.90 4.00 4.10 0.95 1.00 1.10 0.95 1.00 1.05 1.60 1.70 1.80 1.25 1.30 1.35 0.95 1.00 1.05 1.95 2.00 2.05 0.45 0.50 0.55 24.80 25.00 25.20 34.70 35.00 35.30 BSC 7.50 2.40 2.50 2.60 20.30 20.40 20.50 3.70 3.75 3.80 17.40 17.50 17.60 4.10 4.20 4.30 9.20 9.30 9.40 1.77 3.45 3.50 3.55 1.45 1.50 1.55 0.95 1.00 1.05 0.95 1.00 1.05 3.20 3.30 3.40 1.90 2.00 2.10 1.60 1.65 1.70 4.65 4.70 4.75 2.80 2.90 3.00 min 0.213 0.154 0.037 0.037 0.063 0.049 0.037 0.077 0.018 0.977 1.367 BSC 0.095 0.800 0.146 0.686 0.162 0.362 0.136 0.057 0.037 0.037 0.126 0.075 0.063 0.183 0.110 Inches typ. 0.217 0.158 0.039 0.039 0.067 0.051 0.039 0.079 0.020 0.985 1.379 0.296 0.099 0.804 0.148 0.690 0.165 0.366 0.070 0.138 0.059 0.039 0.039 0.130 0.079 0.065 0.185 0.114 max 0.221 0.162 0.043 0.041 0.071 0.053 0.041 0.081 0.022 0.993 1.391 0.102 0.808 0.150 0.693 0.169 0.370 0.140 0.061 0.041 0.041 0.134 0.083 0.067 0.187 0.118 + Data according to IEC 60747and per semiconductor unless otherwise specified 20131028a DNA40U2200GU preliminary Rectifier 300 60 800 50 Hz 0.8 x V RRM VR = 0 V 600 250 40 TVJ = 45°C IFSM IF [A] I2t [A] 2 [A s] 200 20 0 0.4 200 TVJ = 25°C 0.8 1.2 150 10-3 1.6 0 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 12 10 2 Fig. 3 I t vs. time per diode 40 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 16 1 t [ms] VF [V] 20 [W] TVJ = 150°C TVJ = 150°C TVJ = 125°C 150°C Ptot TVJ = 45°C 400 DC = 0.6 KW 1 0.8 KW 1 KW 2 KW 4 KW 8 KW 30 0.5 0.4 0.33 IF(AV)M 0.17 20 0.08 [A] 8 10 4 0 0 0 4 8 12 16 0 25 50 IF(AV)M [A] 75 100 125 150 0 175 25 50 75 100 125 150 175 TC [°C] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 5 4 ZthJC 3 Constants for ZthJC calculation: [K/W] i Rth (K/W) ti (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.820 2 1 0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131028a