MCD26-08io1B Thyristor Module VRRM = 2x 800 V I TAV = 27 A VT = 1.27 V Phase leg Part number MCD26-08io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-08io1B Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 V I R/D reverse current, drain current VR/D = 800 V TVJ = 25°C 100 µA VR/D = 800 V TVJ = 125°C 3 mA TVJ = 25°C 1.27 V 1.64 V 1.27 V VT IT = forward voltage drop 40 A IT = 80 A IT = 40 A IT = 80 A I TAV average forward current TC = 85°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 °C for power loss calculation only Ptot I²t min. 1.65 V T VJ = 125 °C 27 A 50 A TVJ = 125 °C 0.85 V 115 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 440 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.31 kA²s TVJ = 125 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 22 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 11 0.88 TVJ = 125°C; f = 50 Hz repetitive, IT = 45 A non-repet., IT = 27 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 125°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA TVJ = 125 °C 0.2 V 10 mA TVJ = 25 °C 450 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 20 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-08io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C Weight 90 g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Part Number MCD26-08io1B Similar Part MCMA35PD1200TB MCMA50PD1200TB Equivalent Circuits for Simulation I V0 R0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCD26-08io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 3600 V 3000 V Quantity 6 Code No. 500934 Voltage class 1200 1200 T VJ = 125 °C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 9.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-08io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-08io1B Thyristor 60 104 800 VR = 0 V 50 HZ, 80% VRRM DC 180° sin 120° 60° 30° 50 600 40 I2t ITSM TVJ = 45°C ITAVM TVJ = 45°C 103 400 30 TVJ = 125°C [A] [A] [A2s] 20 TVJ = 125°C 200 10 0 102 10-3 10-2 10-1 100 0 1 101 2 t [s] 3 6 8 10 0 50 t [ms] Fig. 1 Surge overload current ITSM: Crest value, t: duration 150 Fig. 3 Max. forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 80 100 TC [°C] RthJA 10 [KW] 60 1: IGT, TVJ = 125°C 1.5 2: IGT, TVJ = 25°C 2 3: IGT, TVJ = -40°C 2.5 3 PT 4 40 VG 3 [W] [V] 6 DC 180° sin 120° 60° 30° 20 2 1 5 0 10 20 30 40 50 6 4 8 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0 5 1 0 50 100 0.1 100 150 101 102 103 104 IG [mA] TA [°C] ITAVM [A] 5W 6: PGM = 10 W Fig. 5 Gate trigger charact. Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor) 1000 400 RthJA TVJ = 25°C [KW] 0.1 0.15 300 0.2 100 0.25 Ptot 0.4 [W] Limit tgd 0.3 200 typ. [µs] 0.5 100 10 0.6 Circuit B6 3x MCC26 or 3x MCD26 0 0 20 40 60 80 IdAVM [A] 0 50 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 1 10 100 1000 IG [mA] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-08io1B Rectifier 400 RthJA [KW] 0.1 0.15 300 0.2 0.25 Ptot 0.3 200 0.4 [W] 0.5 Circuit W3 3x MCC26 or 3x MCD26 100 0 20 40 60 0.6 0 50 IRMS [A] 100 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature 1.2 RthJC for various conduction angles d: d RthJC [K/W] 30° 1.0 60° DC 0.88 120° 180° 0.92 120° 0.95 60° 0.98 30° 1.01 180° 0.8 DC ZthJC 0.6 [K/W] Constants for ZthJC calculation: 0.4 i Rthi [K/W] 0.2 0 10-3 10 -2 10 -1 10 0 10 1 10 10 2 ti [s] 1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.1910 3 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor) 1.5 RthJK for various conduction angles d: d RthJK [K/W] DC 1.08 180° 1.12 120° 1.15 60° 1.18 30° 1.21 30° 60° 120° 180° 1.0 DC ZthJK [K/W] Constants for ZthJK calculation: 0.5 i Rthi [K/W] 0 10-3 1 2 3 4 10-2 10-1 100 101 102 0.019 0.029 0.832 0.200 ti [s] 0.0031 0.0216 0.1910 0.4500 103 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a