Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = 2500V IC110 = 42A VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V VGES Continuous ± 25 V VGEM Transient ± 35 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 104 42 400 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load ICM = 84 1250 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82, VCE = 1250V, Non-Repetitive 10 μs PC TC = 25°C 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features High Blocking Voltage International Standard Package Anti-Parallel Diode Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 2500 VGE(th) IC = 1mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 25V VCE(sat) IC TJ = 125°C 250 V 5.0 V 50 μA μA Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches ±200 nA = 42A, VGE = 15V, Note 1 2.5 TJ = 125°C © 2015 IXYS CORPORATION, All Rights Reserved 3.1 3.0 V V DS100587(01/14) IXBH42N250 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 42A, VCE = 10V, Note 1 28 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 45 S 4780 pF 170 pF Cres RGi 56 Gate Input Resistance 3.0 Qg Qge IC = 42A, VGE = 15V, VCE = 1000V tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 42A, VGE = 15V VCE = 1250V, RG = 20 Resistive Switching Times, TJ = 125°C IC = 42A, VGE = 15V VCE = 1250V, RG = 20 28 nC 75 nC 72 ns 330 ns 445 ns 610 ns 72 ns 580 ns 460 ns 490 ns A B E Q S R D2 D1 D P1 1 2 4 3 L1 nC RthJC D A A2 pF 200 Qgc td(on) TO-247 (IXBH) Outline C E1 L A1 C b b2 b4 e 1 - Gate 2,4 - Collector 3 - Emitter 0.25 °C/W RthCS 0.21 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 42A, VGE = 0V, Note 1 trr IF = 21A, VGE = 0V, -diF/dt = 100A/μs 1.7 μs IRM VR = 100V, VGE = 0V 43 A Note 2.5 V 1. Pulse test, t < 300s, duty cycle, d < 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH42N250 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 90 320 VGE = 25V 20V 15V 80 70 15V 240 60 10V I C - Amperes I C - Amperes VGE = 25V 20V 280 50 40 30 200 10V 160 120 80 20 40 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 7 8 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 90 1.8 VGE = 25V 20V 15V 80 9 10 VGE = 15V 1.6 I C - Amperes 60 VCE(sat) - Normalized 70 10V 50 40 30 I C = 84A 1.4 1.2 I C = 42A 1.0 20 I C = 21A 0.8 10 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.5 180 TJ = 25ºC 5.0 TJ = - 40ºC 25ºC 125ºC 160 4.5 I C - Amperes VCE - Volts 140 4.0 3.5 I C = 84A 3.0 42A 120 100 80 60 2.5 40 2.0 20 21A 0 1.5 5 7 9 11 13 15 17 19 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 21 23 25 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXBH42N250 Fig. 7. Transconductance 80 Fig. 8. Forward Voltage Drop of Intrinsic Diode 140 TJ = - 40ºC 70 120 60 50 I F - Amperes g f s - Siemens TJ = 25ºC 100 25ºC 125ºC 40 30 TJ = 125ºC 80 60 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 Fig. 9. Gate Charge 3.5 35 40 Fig. 10. Capacitance 16 10,000 VCE = 1000V 14 I C = 42A Capacitance - PicoFarads C ies I G = 10mA 12 VGE - Volts 3 VF - Volts I C - Amperes 10 8 6 4 1,000 C oes 100 Cres 2 f = 1 MHz 0 10 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 90 80 0.1 60 Z (th)JC - ºC / W I C - Amperes 70 50 40 30 20 TJ = 125ºC 10 RG = 20Ω dv / dt < 10V / ns 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0.01 0.001 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBH42N250 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 650 650 RG = 20Ω , VGE = 15V 600 600 VCE = 1250V TJ = 125ºC 550 t r - Nanoseconds t r - Nanoseconds 550 500 450 I C = 84A 400 I C = 42A 500 VCE = 1250V 450 400 350 350 300 300 250 RG = 20Ω , VGE = 15V TJ = 25ºC 250 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 60 TJ - Degrees Centigrade 1800 t d(on) - - - - 320 VCE = 1250V 200 800 160 I C = 42A 600 120 400 80 t f - Nanoseconds t r - Nanoseconds 1000 600 460 I C = 42A 500 440 400 420 I C = 84A 300 200 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 800 1100 500 tf 700 t d(off) - - - - tf 1000 480 RG = 20Ω, VGE = 15V 440 400 420 TJ = 125ºC t f i - Nanoseconds TJ = 25ºC 500 2800 2400 I C = 42A 700 2000 600 1600 500 1200 400 300 800 I C = 84A 400 300 200 380 40 45 50 55 60 65 70 75 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 80 85 3600 3200 VCE = 1250V 800 380 125 400 200 20 40 60 80 100 120 RG - Ohms 140 160 0 180 t d(off) - Nanoseconds 460 t d(off) - Nanoseconds 600 t d(off) - - - - TJ = 125ºC, VGE = 15V 900 VCE = 1250V t f - Nanoseconds 400 200 40 180 t d(off) - Nanoseconds 240 480 VCE = 1250V t d(on) - Nanoseconds I C = 84A 20 85 t d(off) - - - - RG = 20Ω, VGE = 15V 700 280 1200 80 500 tf TJ = 125ºC, VGE = 15V 1400 75 800 360 tr 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1600 65 I C - Amperes IXBH42N250 Fig. 19. Forward-Bias Safe Operating Area @ T C = 25ºC 1000 Fig. 20. Forward-Bias Safe Operating Area @ T C = 115ºC 1000 VCE(sat) Limit VCE(sat) Limit 100 100 10 25µs 100µs 1 I C - Amperes I C - Amperes 10 1ms 10ms 0.1 25µs 100µs 1 1ms 0.1 100ms DC 10ms TJ = 150ºC 0.01 TJ = 150ºC 0.01 TC = 25ºC 100ms DC TC = 115ºC Single Pulse Single Pulse 0.001 0.001 1 10 100 1000 10000 1 VCE - Volts 10 100 1000 10000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_42N250 (8M) 3-18-15