GenX3TM 300V IGBT VCES = 300V IC110 = 120A VCE(sat) ≤ 1.7V IXGH120N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 300 300 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms 75 120 480 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 1Ω Clamped inductive load @VCE≤ 300V ICM = 240 A PC TC = 25°C 540 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g TJ TJM Tstg Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight TO-247 (IXGH) G C TAB E G = Gate E = Emitter C = Collector TAB = Collector Features z z z Optimized for low switching losses Square RBSOA International standard package Advantages z z High power density Low gate drive requirement Applications z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC z 300 3.0 TJ = 125°C = 120A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.42 1.47 z z 5.0 V V 10 500 μA μA ±100 nA 1.70 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99797A(07/08) IXGH120N30B3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 55 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 120A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25°°C IC = 60A, VGE = 15V VCE = 240V, RG = 1Ω Resistive load, TJ = 125°°C IC = 60A, VGE = 15V VCE = 240V, RG = 1Ω RthJC RthCK TO-247 (IXGH) Outline 90 S 6700 650 160 pF pF pF 225 nC 38 nC 85 nC 22 27 ns ns 100 64 ns ns 21 30 ns ns 106 250 ns ns 0.21 0.23 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH120N30B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 330 VGE = 15V 13V 11V 220 200 270 180 240 160 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 9V 140 120 100 7V 80 180 150 120 60 90 40 60 20 30 0 9V 210 7V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 3 Fig. 3. Output Characteristics @ 125ºC 5 6 7 8 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature 240 1.6 VGE = 15V 13V 11V VGE = 15V 1.5 160 VCE(sat) - Normalized 200 IC - Amperes 4 VCE - Volts VCE - Volts 9V 120 7V 80 1.4 I C = 240A 1.3 1.2 1.1 I C = 120A I C = 60A 1.0 0.9 40 0.8 5V 0 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 50 75 100 Fig. 6. Input Admittance 275 5.0 250 TJ = 25ºC 4.5 225 4.0 200 IC - Amperes VCE - Volts 25 TJ - Degrees Centigrade 3.5 I 3.0 C = 240A 120A 60A 2.5 175 150 TJ = 125ºC 25ºC - 40ºC 125 100 75 2.0 50 1.5 25 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGH120N30B3 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 TJ = - 40ºC VGE - Volts 125ºC 80 I C = 120A I G = 10mA 12 25ºC 100 g f s - Siemens VCE = 150V 14 120 60 40 10 8 6 4 20 2 0 0 0 40 80 120 160 200 240 0 280 20 40 60 Fig. 9. Reverse-Bias Safe Operating Area 100 120 140 160 180 200 220 240 Fig. 10. Capacitance 100,000 270 f = 1 MHz 240 Capacitance - PicoFarads 210 IC - Amperes 80 QG - NanoCoulombs IC - Amperes 180 150 120 90 TJ = 125ºC 60 Cies 10,000 Coes 1,000 100 Cres RG = 1Ω dV / dt < 10V / ns 30 10 0 50 75 100 125 150 175 200 225 250 275 300 325 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_120N30B3(76)08-07-08-B IXGH120N30B3 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 39 39 RG = 1Ω VGE = 15V VCE = 240V 35 RG = 1Ω 37 I C t r - Nanoseconds t r - Nanoseconds 37 = 120A 33 31 VGE = 15V VCE = 240V 35 TJ = 125ºC 33 31 29 29 I C TJ = 25ºC = 60A 27 27 25 25 25 35 45 55 65 75 85 95 105 115 60 125 65 70 75 80 40 tr 325 TJ = 125ºC, VGE = 15V 170 300 VCE = 240V 160 26 I C = 60A 34 23 33 22 32 21 31 20 30 29 28 2.0 2.5 3.0 3.5 4.0 4.5 190 275 150 250 140 I C = 60A 225 130 200 120 175 19 150 18 125 17 100 110 I 275 1.5 2.0 2.5 RG = 1Ω, VGE = 15V 150 I C = 120A 125 95 100 75 90 50 25 35 45 55 65 75 4.5 5.0 108 250 tf 225 RG = 1Ω, VGE = 15V 104 200 VCE = 240V 102 175 85 95 TJ - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 105 115 85 125 td(off) - - - - 106 100 150 98 TJ = 125ºC 125 96 100 94 75 92 50 90 TJ = 25ºC 25 25 4.0 t d(off) - Nanoseconds 100 I C = 60A t d(off) - Nanoseconds 200 t f - Nanoseconds 105 VCE = 240V t f - Nanoseconds 3.5 275 td(off) - - - - 175 3.0 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 110 225 100 RG - Ohms Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 250 = 120A 80 1.0 5.0 C 90 RG - Ohms tf 180 td(on) - - - - - Nanoseconds 24 - Nanoseconds I C = 120A 1.5 120 350 25 1.0 115 375 27 36 35 110 28 t f - Nanoseconds VCE = 240V 105 d(off) 37 100 t TJ = 125ºC, VGE = 15V 95 29 d(on) 38 t r - Nanoseconds td(on) - - - - t tr 90 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 39 85 IC - Amperes TJ - Degrees Centigrade 88 0 60 65 70 75 80 85 90 95 86 100 105 110 115 120 IC - Amperes IXYS REF: G_120N30B3(76)08-07-08-B