Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 300 300 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms 75 100 400 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 2Ω Clamped inductive load @VCE≤ 300V ICM = 200 A PC TC = 25°C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g TJ TJM Tstg Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight 300V 100A 1.7V 33ns TO-247 (IXGH) G C TAB E G = Gate E = Emitter C = Collector TAB = Collector Features z z z Optimized for low switching losses Square RBSOA International standard package Advantages z z High power density Low gate drive requirement Applications z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC z 300 3.0 TJ = 125°C = 100A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 1.35 1.40 z z 5.0 V V 10 500 μA μA ±100 nA 1.7 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100007(07/08) IXGH100N30B3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. IC = 50A, VCE = 10V, Note 1 45 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge 77 S 5010 370 93 pF pF pF 166 nC 30 nC 65 nC 27 51 ns ns 110 33 ns ns 24 61 ns ns 124 148 ns ns 0.21 0.27 °C/W °C/W IC = 100A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25°°C IC = 50A, VGE = 15V VCE = 240V, RG = 2Ω Resistive load, TJ = 125°°C IC = 50A, VGE = 15V VCE = 240V, RG = 2Ω RthJC RthCK TO-247 (IXGH) Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH100N30B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGE = 15V 13V 11V 180 160 250 IC - Amperes 140 IC - Amperes VGE = 15V 13V 11V 300 9V 120 100 80 60 7V 200 9V 150 100 40 7V 50 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 1 2 3 Fig. 3. Output Characteristics @ 125ºC 200 IC - Amperes 120 9V 100 80 7V 60 1.4 1.3 1.1 20 0.8 0 0.7 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 C = 200A I C = 100A I C = 50A 1.0 0.9 0.4 I 1.2 40 0.2 VGE = 15V 1.5 140 0.0 6 1.6 VCE(sat) - Normalized 160 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature VGE = 15V 13V 11V 180 4 VCE - Volts VCE - Volts 2.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 220 5.0 200 TJ = 25ºC 4.5 180 160 IC - Amperes VCE - Volts 4.0 3.5 I 3.0 C = 200A 100A 50A 2.5 140 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 2.0 40 1.5 20 0 1.0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXGH100N30B3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 130 120 TJ = - 40ºC 100 I C = 100A I G = 10mA 12 90 25ºC 80 VGE - Volts g f s - Siemens VCE = 150V 14 110 125ºC 70 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 IC - Amperes 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 220 10,000 200 Cies Capacitance - PicoFarads 180 IC - Amperes 160 140 120 100 80 60 TJ = 125ºC 40 1,000 Coes 100 Cres RG = 2Ω dV / dt < 10V / ns 20 f = 1 MHz 0 10 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 1.00 Z(th)JC - ºC / W IC - Amperes VCE(sat) Limit 1µs 100 10µs TJ = 150ºC 0.10 100µs TC = 25ºC Single Pulse 1ms 10 1 10 100 1000 VCE - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_200N30PB(75)7-05-08-D IXGH100N30B3 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 95 100 RG = 2Ω 90 90 VGE = 15V 80 C = 100A t r - Nanoseconds t r - Nanoseconds 85 I RG = 2Ω VGE = 15V VCE = 240V 70 60 VCE = 240V TJ = 125ºC 80 75 TJ = 25ºC 70 65 60 50 I C = 50A 55 40 50 25 35 45 55 65 75 85 95 105 115 125 50 55 60 65 70 TJ - Degrees Centigrade 130 I C = 100A 29 100 28 90 27 80 26 I C = 50A 50 120 5 6 7 8 9 100 118 I C = 50A 80 112 40 25 35 45 t f - Nanoseconds VCE = 240V 128 190 125 185 122 119 116 80 113 60 110 75 85 95 105 115 106 125 40 20 80 85 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 90 95 280 tf td(off) - - - - 260 TJ = 125ºC, VGE = 15V 180 240 VCE = 240V 175 220 170 200 I C = 50A 165 180 I 160 C = 100A 160 155 140 107 150 120 104 100 145 TJ = 25ºC 75 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 70 55 t d(off) - Nanoseconds td(off) - - - - RG = 2Ω, VGE = 15V 120 109 I C = 100A 20 10 t d(off) - Nanoseconds tf TJ = 125ºC 65 115 60 t f - Nanoseconds 160 60 121 TJ - Degrees Centigrade 180 55 124 I C = 100A Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 50 127 td(off) - - - - RG - Ohms 140 100 VCE = 240V 23 4 95 RG = 2Ω, VGE = 15V 140 24 3 90 25 60 2 85 t d(off) - Nanoseconds 110 70 tf 30 t d(on) - Nanoseconds t r - Nanoseconds 31 TJ = 125ºC, VGE = 15V VCE = 240V 120 160 32 td(on) - - - - t f - Nanoseconds tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 140 75 IC - Amperes 100 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: G_200N30PB(75)7-05-08-D