Data Sheet - IXYS Corporation

IXTH52N65X
X-Class
Power MOSFET
VDSS
ID25
RDS(on)
= 650V
= 52A
 68m

N-Channel Enhancement Mode
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
650
V
VDGR
TJ = 25C to 150C, RGS = 1M
650
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
52
A
IDM
TC = 25C, Pulse Width Limited by TJM
104
A
PD
TC = 25C
660
W
-55 ... +150
C
TJ
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13/10
Nm/lb.in
6
g
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
G
Tab
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features

Weight
D


International Standard Package
Low RDS(ON) and QG
Low Package Inductance
Advantages



Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
650
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
5.0
Applications
V

V

100 nA
TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
10 A
100 A



Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
68 m
DS100604D(6/15)
IXTH52N65X
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
25
RGi
Gate Input Resistance
S

1.1
D
A
A2
4350
Q
VGS = 0V, VDS = 25V, f = 1MHz
pF
3300
pF
120
pF
Crss
td(on)
tr
td(off)
tf
Energy related
Time related
D2
D1
P1
1
2
4
3
L1
C
E1
L
204
673
VGS = 0V
VDS = 0.8 • VDSS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Qg(on)
Qgs
S
D
Effective Output Capacitance
Co(er)
Co(tr)
A
B
E
R
Ciss
Coss
42
TO-247 Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
pF
pF
26
ns
57
ns
63
ns
16
ns
113
nC
25
nC
57
nC
A1
C
b
b2
b4
e
1 - Gate
2,4 - Drain
3 - Source
0.19 C/W
RthJC
RthCS
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V, Note1
ISM
Characteristic Values
Min.
Typ.
Max
52
A
Repetitive, pulse Width Limited by TJM
208
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 26A, -di/dt = 100A/μs
435
9.8
46
VR = 100V
ns
C
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTH52N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
VGS = 10V
8V
50
VGS = 10V
9V
120
7V
8V
100
I D - Amperes
I D - Amperes
40
30
20
80
7V
60
40
6V
10
20
6V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
VDS - Volts
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 26A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.4
VGS = 10V
8V
50
2.6
40
7V
RDS(on) - Normalized
I D - Amperes
VGS = 10V
3.0
30
6V
20
I D = 52A
2.2
1.8
I D = 26A
1.4
1.0
10
0.6
5V
0.2
0
0
1
2
3
4
5
6
7
8
-50
9
0
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 26A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
150
1.3
4.5
VGS = 10V
1.2
BVDSS / VGS(th) - Normalized
4.0
TJ = 125ºC
3.5
RDS(on) - Normalized
-25
VDS - Volts
3.0
2.5
2.0
TJ = 25ºC
1.5
BVDSS
1.1
1.0
0.9
0.8
VGS(th)
0.7
1.0
0.6
0.5
0
20
40
60
80
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
100
120
140
-60
-40
-20
0
20
40
60
80
TJ - Degrees Centigrade
100
120
140
160
IXTH52N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
80
60
70
50
60
I D - Amperes
I D - Amperes
40
30
50
TJ = 125ºC
25ºC
- 40ºC
40
30
20
20
10
10
0
0
-50
-25
0
25
50
75
100
125
3.5
150
4.0
4.5
5.0
TC - Degrees Centigrade
6.0
6.5
7.0
7.5
8.0
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
80
160
TJ = - 40ºC
70
140
60
120
25ºC
50
I S - Amperes
g f s - Siemens
5.5
VGS - Volts
125ºC
40
30
100
80
60
TJ = 125ºC
20
40
10
20
TJ = 25ºC
0
0
0
10
20
30
40
50
60
70
80
90
0.3
0.4
0.5
0.6
I D - Amperes
0.8
0.9
1.0
1.1
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10
9
VDS = 325V
Capacitance - PicoFarads
I D = 26A
8
I G = 10mA
7
VGS - Volts
0.7
VSD - Volts
6
5
4
3
2
10,000
C iss
1,000
C oss
100
C rss
10
f = 1 MHz
1
0
1
0
10
20
30
40
50
60
70
80
90
100
110
120
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXTH52N65X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
45
40
RDS(on) Limit
100
25µs
30
I D - Amperes
EOSS - MicroJoules
35
25
20
100µs
10
15
1ms
1
10
TJ = 150ºC
10ms
100ms
TC = 25ºC
Single Pulse
5
DC
0
0.1
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_52N65X(I8-R4T4) 6-17-15-A