High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 34 10 88 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 μs PC TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 260 °C °C 10..65 / 22..14.6 N/lb 1.13/10 Nm/lb.in 2.5 6.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force (TO-263HV) Md Mounting Torque (TO-247HV) Weight TO-263HV TO-247HV C (Tab) TO-247HV (IXBH) G E C G = Gate E = Emitter C (Tab) C = Collector Tab = Collector High Blocking Voltage Anti-Parallel Diode Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC TJ = 125°C V 5.0 V 25 500 μA μA Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches ±100 nA = 10A, VGE = 15V, Note 1 2.2 TJ = 125°C © 2015 IXYS CORPORATION, All Rights Reserved 2.7 2.8 V V DS100608B(9/15) IXBA10N300HV IXBH10N300HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6 IC = 10A, VCE = 10V, Note 1 E 11 Cies Coes TO-263HV-2L Outline VCE = 25V, VGE = 0V, f = 1MHz S 1044 pF 42 pF Cres 14 pF Qg 46 nC Qge IC = 10A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 10A, VGE = 15V VCE = 960V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 10A, VGE = 15V VCE = 960V, RG = 10 5 nC 20 nC 36 ns 340 ns 100 ns 1850 ns 40 ns 765 ns 120 ns 2010 ns RthJC RthCS 0.69 TO-247HV L1 0.21 c2 A D1 D 1 H 3 E1 A1 2 L4 L L3 b b2 e2 e1 PIN: 1 - Gate 2 - Emitter 3 - Collector c A2 °C/W °C/W TO-247HV Outline E R 0P A2 A E1 0P1 Q S Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V trr IRM QRM IF = 5A, VGE = 0V, -diF/dt = 100A/μs Note D1 D 2.7 1.6 23 18.6 VR = 100V, VGE = 0V 4 D2 1 2 3 L1 D3 L V μs A μC e e1 A3 2X E2 E3 A1 4X b c 3X 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 1: Pulse test, t 300μs, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXBA10N300HV IXBH10N300HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 140 VGE = 15V 13V 11V 10V 9V 16 I C - Amperes 14 VGE = 15V 120 8V 14V 100 I C - Amperes 18 7V 12 10 8 6V 6 13V 80 12V 11V 60 10V 9V 40 4 8V 20 2 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.7 VGE = 15V 13V 11V 10V 9V 16 14 30 VGE = 15V 1.6 1.5 VCE(sat) - Normalized 18 8V 12 7V 10 8 6V 6 I C = 20A 1.4 1.3 1.2 I C = 10A 1.1 1.0 0.9 4 I C = 5A 5V 2 0.8 0.7 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 Fig. 6. Input Admittance 32 28 TJ = 25ºC 4.5 24 3.5 I C - Amperes 4.0 VCE - Volts 15 VCE - Volts 20 I C - Amperes 7V 5V I C = 20A 3.0 10A 2.5 20 16 12 TJ = 125ºC 25ºC 8 2.0 - 40ºC 4 5A 0 1.5 5 6 7 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXBA10N300HV IXBH10N300HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 18 60 TJ = 25ºC 125ºC TJ = - 40ºC 16 50 25ºC 12 10 40 I F - Amperes g f s - Siemens 14 125ºC 8 6 30 VGE = 0V 20 VGE = 15V 4 10 2 0 0 0 5 10 15 20 25 30 35 0 0.5 1 1.5 2 I C - Amperes 2.5 3 3.5 4 4.5 5 5.5 VF - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 1kV 14 VGE - Volts 12 Capacitance - PicoFarads I C = 10A I G = 10mA 10 8 6 4 1,000 Cies 100 Coes 2 Cres 0 10 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 90 1 80 70 Z (th)JC - ºC / W I C - Amperes 60 50 40 30 20 TJ = 125ºC 10 RG = 10Ω dv / dt < 10V / ns 0 500 1000 1500 2000 2500 3000 0.1 0.01 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 800 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 1200 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 1000 VCE = 960V t r - Nanoseconds t r - Nanoseconds 700 600 I C = 10A 500 I C = 20A 400 VCE = 960V 800 TJ = 125ºC 600 400 TJ = 25ºC 300 200 200 0 25 35 45 55 65 75 85 95 105 115 125 5 6 7 8 9 10 11 TJ - Degrees Centigrade tr 1000 td(on) - - - - tf 2400 16 17 18 19 20 2200 800 60 I C = 10A 50 600 t f - Nanoseconds 70 I C = 20A 140 130 VCE = 960V 2000 120 I C = 20A 1800 110 1600 100 I C = 10A 1400 90 1200 80 1000 70 t d(off) - Nanoseconds 900 td(off) - - - - RG = 10Ω, VGE = 15V t d(on) - Nanoseconds t r - Nanoseconds 15 150 80 VCE = 960V 40 500 10 20 30 40 50 60 70 80 90 30 100 800 25 35 45 RG - Ohms 190 td(off) - - - - 110 TJ = 25ºC 1600 90 1200 70 800 50 5 7 9 11 13 75 85 95 105 115 60 125 15 17 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 19 21 600 td(off) - - - 500 TJ = 125ºC, VGE = 15V VCE = 960V 2000 400 I C = 10A 1600 300 I C = 20A 1200 200 800 100 400 10 20 30 40 50 60 RG - Ohms 70 80 90 0 100 t d(off) - Nanoseconds 2000 130 2400 t d(off) - Nanoseconds 150 TJ = 125ºC 2400 tf 170 RG = 10Ω, VGE = 15V VCE = 960V 2800 65 Fig. 28. Resistive Turn-off Switching Times vs. Gate Resistance 2800 t f - Nanoseconds tf 3200 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 3600 t f - Nanoseconds 14 2600 90 TJ = 125ºC, VGE = 15V 700 13 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1100 12 I C - Amperes IXBA10N300HV IXBH10N300HV Fig. 19. Forward-Bias Safe Operating Area Fig. 20. Forward-Bias Safe Operating Area @ TC = 25ºC 100 @ TC = 75ºC 100 VCE(sat) Limit VCE(sat) Limit 10 I C - Amperes I C - Amperes 10 25µs 1 100µs 1ms 1 25µs 100µs 1ms 0.1 0.1 TJ = 150ºC TJ = 150ºC 10ms TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 100ms 10ms DC 100ms 0.01 0.01 1 10 100 1,000 10,000 1 VCE - Volts 10 100 1,000 10,000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_10N300(3T-B8-27) 9-16-14-A