High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V 1 5 IC25 TC = 25°C 26 A IC110 TC = 110°C 11 A ICM TC = 25°C, 1ms 98 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load ICM = 98 1500 A V PC TC = 25°C 125 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C z 300 260 °C °C z 20..120 / 4.5..27 Nm/lb.in. z 4000 V~ z 5 g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 2 1 = Gate 2 = Emitter Isolated Tab 5 = Collector Features z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 12A, VGE = 15V, Note 1 5.0 TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved V Applications V z 25 μA 1 mA 2.8 3.5 Low Gate Drive Requirement High Power Density ±100 nA 3.2 V z z z z Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Uninterrupted Power Supplies(UPS) Laser Drivers AC Switches V DS100121C(10/12) IXBF12N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6.5 IC = 12A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 12A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 12A, VGE = 15V VCE = 1250V, RG = 10Ω Resistive Switching Times, TJ = 125°C IC = 12A, VGE = 15V VCE = 1250V, RG = 10Ω 10.8 S 1290 pF 56 pF 19 pF 62 nC 13 nC 8.5 nC 64 ns 140 ns 180 ns 540 ns 65 ns 395 ns 175 ns 530 ns RthJC 1.00 RthCS ISOPLUS i4-PakTM (HV) Outline 0.15 Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 12A, VGE = 0V 2.1 V trr IF = 6A, VGE = 0V, -diF/dt = 100A/μs 1.4 μs IRM VR = 100V, VGE = 0V 21 A Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF12N300 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 240 24 VGE = 25V VGE = 25V 20V 15V 20 200 20V 160 IC - Amperes IC - Amperes 16 10V 12 8 4 15V 120 80 10V 40 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 24 VGE = 15V I VCE(sat) - Normalized 1.6 16 10V 12 30 1.8 VGE = 25V 20V 15V 20 IC - Amperes 5 VCE - Volts 8 4 C 1.4 = 24A I C = 12A 1.2 1.0 I C = 6A 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 6.0 5.5 36 TJ = 25ºC 32 28 4.5 4.0 I C IC - Amperes VCE - Volts 5.0 = 24A 3.5 24 20 16 TJ = 125ºC 25ºC - 40ºC 12 3.0 12A 8 2.5 4 6A 0 2.0 5 7 9 11 13 15 17 19 21 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBF12N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 18 36 TJ = - 40ºC 16 32 14 28 12 24 125ºC IF - Amperes g f s - Siemens 25ºC 10 8 TJ = 125ºC 16 6 12 4 8 2 4 0 TJ = 25ºC 20 0 0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3 VF - Volts IC - Amperes Fig. 9. Gate Charge Fig. 10. Capacitance 16 10,000 14 VCE = 1kV 12 I G = 10mA f = 1 MHz Capacitance - PicoFarads VGE - Volts I C = 12A 10 8 6 4 1,000 Cies Coes 100 2 0 Cres 10 0 10 20 30 40 50 60 0 5 13. Maximum 10 15 Transient 20 25 30 35 Fig. Thermal Impedance Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area aaa 2 100 1 D = 0.50 Z(th)JC - ºC / W IC - Amperes 80 60 40 20 40 VCE - Volts 10 QG - NanoCoulombs D = 0.20 D = tp / T D = 0.10 0.1 tp D = 0.05 TJ = 125ºC D = 0.02 RG = 20Ω dv / dt < 10V / ns D = 0.01 T Single Pulse 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.01 0.000001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXBF12N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 600 600 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 500 VCE = 1250V VCE = 1250V TJ = 125ºC 400 I C t r - Nanoseconds t r - Nanoseconds 500 = 24A 300 I C = 12A 200 400 300 200 TJ = 25ºC 100 100 0 0 25 35 45 55 65 75 85 95 105 115 125 6 8 10 12 14 TJ - Degrees Centigrade 750 110 100 I C = 24A, 12A 450 90 400 80 350 70 300 60 250 30 40 50 60 70 80 90 td(off) - - - - RG = 10Ω, VGE = 15V 600 180 I C = 12A 500 400 300 50 100 I C = 24A 200 25 35 45 220 600 180 400 140 TJ = 125ºC, 25ºC 200 100 0 60 16 95 105 115 140 125 18 20 22 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 24 td(off) - - - - 800 TJ = 125ºC, VGE = 15V 700 VCE = 1250V 550 600 I C = 12A 500 500 450 400 400 I C 300 = 24A 350 200 300 100 250 10 20 30 40 50 60 70 80 90 t d(off) - Nanoseconds 260 800 14 tf 600 VCE = 1250V 12 85 900 650 300 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 10Ω, VGE = 15V t f - Nanoseconds tf 10 75 700 340 8 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1400 6 55 150 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 1000 170 160 RG - Ohms 1200 190 VCE = 1250V t f - Nanoseconds 120 550 20 24 t d(off) - Nanoseconds 600 10 tf 700 130 VCE = 1250V 500 22 200 140 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 650 20 800 150 tr 18 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 16 IC - Amperes 0 100 RG - Ohms IXYS REF: B_12N300(4P)6-07-12-B