Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE(sat) ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 25 V VGEM Transient ± 35 V 1 5 IC25 TC = 25°C 60 A IC110 TC = 110°C 24 A ICM TC = 25°C, 1ms 380 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load ICM = 84 VCE ≤ 0.8 • VCES A TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82Ω, VCE = 1500V, Non-Repetitive 10 μs PC TC = 25°C 240 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C z 300 260 °C °C z 20..120 / 4.5..27 Nm/lb.in. 3000 V~ 5 g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute 1 = Gate 2 = Emitter z z z Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 3000 VGE(th) IC = 1mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC = 42A, VGE = 15V, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved 3.1 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 3000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage FBSOA Rated SCSOA Rated Low Gate Drive Requirement High Power Density Applications 5.0 V 50 μA μA z ±200 nA z 3.0 V 250 2.5 TJ = 125°C z V 5 = Collector Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Isolated Tab Features z Weight 2 z z Laser Generators Capacitor Discharge Circuits AC Switches Protection Circuits V DS100325A(06/11) IXBF42N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 42A, VCE = 10V, Note 1 28 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres RGi Gate Input Resistance Qg Qge IC = 42A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 42, VGE = 15V VCE = 1500V, RG = 20Ω Resistive Switching Times, TJ = 125°C IC = 42, VGE = 15V VCE = 1500V, RG = 20Ω ISOPLUS i4-PakTM (HV) Outline 45 S 4780 pF 170 pF 56 pF 3.0 Ω 200 nC 28 nC 75 nC 72 ns 330 ns 445 ns 610 ns 72 ns 580 ns 460 ns 490 ns RthJC Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated 0.52 °C/W RthCS 0.15 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 42A, VGE = 0V, Note 1 2.5 V trr IF = 21A, VGE = 0V, -diF/dt = 100A/μs 1.7 μs IRM VR = 100V, VGE = 0V 43 A Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF42N300 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 90 320 VGE = 25V 20V 15V 80 70 15V 240 60 10V IC - Amperes IC - Amperes VGE = 25V 20V 280 50 40 30 200 10V 160 120 80 20 40 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 3 4 5 6 8 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 9 10 1.8 VGE = 25V 20V 15V 80 VGE = 15V 1.6 60 VCE(sat) - Normalized 70 10V 50 40 30 I 1.4 C = 84A 1.2 I C I 0.8 10 = 42A 1.0 20 C = 21A 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.5 TJ = 25ºC 5.0 180 TJ = - 40ºC 25ºC 125ºC 160 4.5 140 IC - Amperes VCE - Volts 7 VCE - Volts 90 IC - Amperes 1 VCE - Volts 4.0 3.5 I C = 84A 3.0 42A 120 100 80 60 2.5 40 2.0 21A 20 0 1.5 5 7 9 11 13 15 17 19 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 21 23 25 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXBF42N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 140 80 TJ = - 40ºC 70 120 TJ = 25ºC 100 25ºC 50 IF - Amperes g f s - Siemens 60 125ºC 40 30 TJ = 125ºC 80 60 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 2.5 3 3.5 Fig. 10. Capacitance Fig. 9. Gate Charge 16 10,000 VCE = 1000V 14 I C = 42A Cies Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 2 VF - Volts IC - Amperes 10 8 6 4 1,000 Coes 100 Cres 2 f = 1 MHz 10 0 0 20 40 60 80 100 120 140 160 180 0 200 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 90 80 70 Z(th)JC - ºC / W IC - Amperes 60 50 40 30 20 TJ = 125ºC 10 RG = 20Ω dV / dt < 10V / ns 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.1 0.01 0.001 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXBF42N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 650 650 RG = 20Ω , VGE = 15V 600 600 VCE = 1500V TJ = 125ºC 550 t r - Nanoseconds t r - Nanoseconds 550 500 450 I C = 84A 400 I C = 42A 500 RG = 20Ω , VGE = 15V VCE = 1500V 450 400 350 350 300 300 250 TJ = 25ºC 250 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 60 TJ - Degrees Centigrade 1800 t d(on) - - - - 320 200 800 160 I C = 42A 600 120 400 80 t f - Nanoseconds t r - Nanoseconds 1000 600 460 I C = 42A 500 440 400 420 I C = 84A 300 200 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1100 500 t d(off) - - - - tf 1000 TJ = 25ºC 500 440 400 420 TJ = 125ºC 2800 VCE = 1500V 800 2400 I C = 42A 700 2000 600 1600 500 1200 400 300 3200 I 400 C 800 = 84A 300 200 380 40 45 50 55 60 65 70 75 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 80 85 400 200 20 40 60 80 100 120 RG - Ohms 140 160 0 180 t d(off) - Nanoseconds 460 t d(off) - Nanoseconds 600 t d(off) - - - - TJ = 125ºC, VGE = 15V 900 VCE = 1500V 380 125 3600 480 RG = 20Ω, VGE = 15V t f i - Nanoseconds tf 700 t f - Nanoseconds 400 200 40 180 800 480 VCE = 1500V t d(on) - Nanoseconds 240 t d(off) - - - - RG = 20Ω, VGE = 15V 700 280 I C = 84A 20 85 t d(off) - Nanoseconds VCE = 1500V 1200 80 500 tf TJ = 125ºC, VGE = 15V 1400 75 800 360 tr 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1600 65 IC - Amperes IXBF42N300 Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 20. Forward-Bias Safe Operating Area @ TC = 115ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 25µs 10 100µs IC - Amperes IC - Amperes 10 1ms 1 10ms 0.1 25µs 100µs 1 1ms 0.1 100ms 0.01 10ms DC TJ = 150ºC TJ = 150ºC 0.01 TC = 25ºC TC = 115ºC Single Pulse Single Pulse 0.001 100ms DC 0.001 1 10 100 1000 10000 1 VCE - Volts 10 100 1000 10000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_42N300(8M)04-14-11