Preliminary Technical Information IXTA152N085T IXTP152N085T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 85 V = 152 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 85 85 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 152 75 410 A A A IAR E AS TC = 25° C TC = 25° C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-263 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3 2.5 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 85 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 V TJ = 150° C © 2006 IXYS CORPORATION All rights reserved 5.8 4.0 V ± 200 nA 25 250 µA µA 7.0 mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99532 (11/06) IXTA152N085T IXTP152N085T Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 60 100 S 5500 pF 720 pF 150 pF Ciss Coss TO-263AA (IXTA) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 50 ns td(off) RG = 5 Ω (External) 50 ns 45 ns 114 nC 30 nC 35 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.42 °C/W RthJC RthCH Pins: TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 152 A ISM Pulse width limited by TJM 410 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/µs 90 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220AB (IXTP) Outline ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARY TECHNICAL INFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA152N085T IXTP152N085T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 160 VGS = 10V 9V 8V 140 240 120 7V 210 ID - Amperes ID - Amperes VGS = 10V 9V 8V 270 100 6V 80 60 7V 180 150 120 6V 90 40 60 20 5V 30 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 1 2 3 6 7 8 2.6 160 VGS = 10V 9V 8V 140 VGS = 10V 2.4 2.2 RDS(on) - Normalized 7V 120 ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 76A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 100 80 60 5V 40 2.0 1.8 I D = 152A 1.6 I D = 76A 1.4 1.2 1.0 20 0.8 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 2.4 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 76A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3 140 VGS = 10V 15V - - - - 2.8 External Lead Current Limit for TO-263 (7-Lead) 120 2.6 TJ = 175ºC 2.4 100 ID - Amperes RDS(on) - Normalized 4 VDS - Volts VDS - Volts 2.2 2 1.8 1.6 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 1.4 TJ = 25ºC 1.2 20 1 0.8 0 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA152N085T IXTP152N085T Fig. 8. Transconductance Fig. 7. Input Admittance 270 140 240 TJ = -40ºC 25ºC 150ºC 180 g f s - Siemens I D - Amperes 210 150 120 120 TJ = - 40ºC 100 25ºC 80 150ºC 60 90 40 60 20 30 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 40 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 200 240 Fig. 10. Gate Charge 10 280 VDS = 43V 9 240 I D = 25A 8 200 I G = 10mA 7 VGS - Volts IS - Amperes 120 I D - Amperes 160 TJ = 150ºC 120 TJ = 25ºC 6 5 4 3 80 2 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 C iss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.10 C rss 100 0 5 10 15 20 25 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. VDS - Volts 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA152N085T IXTP152N085T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 60 RG = 5Ω 55 50 45 40 35 30 TJ = 25ºC 50 VDS = 43V t r - Nanoseconds t r - Nanoseconds 55 VGS = 10V I D = 50A 25 45 RG = 5Ω 40 VGS = 10V VDS = 43V 35 30 25 I D = 25A 20 20 15 TJ = 125ºC 15 10 10 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 43 60 33 50 31 40 29 I D = 50A RG = 5Ω, VGS = 10V 10 23 12 68 44 64 I D = 50A 43 60 I D = 25A 42 56 41 52 14 16 18 40 20 48 25 35 45 RG - Ohms 80 45 75 TJ = 25ºC TJ = 125ºC VDS = 43V 65 60 41 55 TJ = 125ºC t f - Nanoseconds td(off) - - - - RG = 5Ω, VGS = 10V 50 T J = 25ºC 39 45 28 32 36 95 105 115 125 220 120 200 40 44 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 48 180 I D = 25A 100 160 90 140 I D = 50A 80 120 70 100 60 80 td(off) - - - - tf 50 40 24 85 60 TJ = 125ºC, VGS = 10V 40 t d ( o f f ) - Nanoseconds 70 t d ( o f f ) - Nanoseconds t f - Nanoseconds 75 130 110 44 42 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 46 tf 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 43 72 45 25 10 50 27 20 8 48 t d ( o f f ) - Nanoseconds 35 I D = 25A 6 46 VDS = 43V t d ( o n ) - Nanoseconds 37 4 44 76 46 80 30 42 td(off) - - - - tf 39 VDS = 43V 70 40 47 41 TJ = 125ºC, VGS = 10V 90 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 100 38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 110 tr 36 I D - Amperes 40 VDS = 43V 30 20 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_152N085T (4V) 6-12-06.xls