IXYS IXTP152N085T

Preliminary Technical Information
IXTA152N085T
IXTP152N085T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
= 85
V
= 152
A
Ω
≤ 7.0 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
VGSM
85
85
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
152
75
410
A
A
A
IAR
E AS
TC = 25° C
TC = 25° C
25
750
A
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
PD
TC = 25° C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque (TO-220)
Weight
TO-220
TO-263
360
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13 / 10 Nm/lb.in.
3
2.5
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
85
VGS(th)
VDS = VGS, ID = 250 µA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
V
TJ = 150° C
© 2006 IXYS CORPORATION All rights reserved
5.8
4.0
V
± 200
nA
25
250
µA
µA
7.0
mΩ
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99532 (11/06)
IXTA152N085T
IXTP152N085T
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
60
100
S
5500
pF
720
pF
150
pF
Ciss
Coss
TO-263AA (IXTA) Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
Max.
td(on)
Resistive Switching Times
30
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
50
ns
td(off)
RG = 5 Ω (External)
50
ns
45
ns
114
nC
30
nC
35
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
0.42 °C/W
RthJC
RthCH
Pins:
TO-220
°C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
Min.
Characteristic Values
Typ.
Max.
IS
VGS = 0 V
152
A
ISM
Pulse width limited by TJM
410
A
VSD
IF = 25 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 25 A, -di/dt = 100 A/µs
90
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
TO-220AB (IXTP) Outline
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
PRELIMINARY TECHNICAL INFORMATION
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTA152N085T
IXTP152N085T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
160
VGS = 10V
9V
8V
140
240
120
7V
210
ID - Amperes
ID - Amperes
VGS = 10V
9V
8V
270
100
6V
80
60
7V
180
150
120
6V
90
40
60
20
5V
30
5V
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1.1
1
2
3
6
7
8
2.6
160
VGS = 10V
9V
8V
140
VGS = 10V
2.4
2.2
RDS(on) - Normalized
7V
120
ID - Amperes
5
Fig. 4. RDS(on) Normalized to ID = 76A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
6V
100
80
60
5V
40
2.0
1.8
I D = 152A
1.6
I D = 76A
1.4
1.2
1.0
20
0.8
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
2.4
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 76A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
3
140
VGS = 10V
15V - - - -
2.8
External Lead Current Limit for TO-263 (7-Lead)
120
2.6
TJ = 175ºC
2.4
100
ID - Amperes
RDS(on) - Normalized
4
VDS - Volts
VDS - Volts
2.2
2
1.8
1.6
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
1.4
TJ = 25ºC
1.2
20
1
0.8
0
0
50
100
150
200
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
250
300
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTA152N085T
IXTP152N085T
Fig. 8. Transconductance
Fig. 7. Input Admittance
270
140
240
TJ = -40ºC
25ºC
150ºC
180
g f s - Siemens
I D - Amperes
210
150
120
120
TJ = - 40ºC
100
25ºC
80
150ºC
60
90
40
60
20
30
0
0
3.5
4
4.5
5
5.5
6
6.5
0
7
40
80
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
160
200
240
Fig. 10. Gate Charge
10
280
VDS = 43V
9
240
I D = 25A
8
200
I G = 10mA
7
VGS - Volts
IS - Amperes
120
I D - Amperes
160
TJ = 150ºC
120
TJ = 25ºC
6
5
4
3
80
2
40
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
10
20
30
VSD - Volts
40
50
60
70
80
90
100 110 120
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1.00
10,000
C iss
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
C oss
1,000
0.10
C rss
100
0
5
10
15
20
25
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
VDS - Volts
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTA152N085T
IXTP152N085T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
60
RG = 5Ω
55
50
45
40
35
30
TJ = 25ºC
50
VDS = 43V
t r - Nanoseconds
t r - Nanoseconds
55
VGS = 10V
I D = 50A
25
45
RG = 5Ω
40
VGS = 10V
VDS = 43V
35
30
25
I D = 25A
20
20
15
TJ = 125ºC
15
10
10
25
35
45
55
65
75
85
95
105
115
125
24
26
28
30
32
34
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
43
60
33
50
31
40
29
I D = 50A
RG = 5Ω, VGS = 10V
10
23
12
68
44
64
I D = 50A
43
60
I D = 25A
42
56
41
52
14
16
18
40
20
48
25
35
45
RG - Ohms
80
45
75
TJ = 25ºC
TJ = 125ºC
VDS = 43V
65
60
41
55
TJ = 125ºC
t f - Nanoseconds
td(off) - - - -
RG = 5Ω, VGS = 10V
50
T J = 25ºC
39
45
28
32
36
95
105
115
125
220
120
200
40
44
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
48
180
I D = 25A
100
160
90
140
I D = 50A
80
120
70
100
60
80
td(off) - - - -
tf
50
40
24
85
60
TJ = 125ºC, VGS = 10V
40
t d ( o f f ) - Nanoseconds
70
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
75
130
110
44
42
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
46
tf
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
43
72
45
25
10
50
27
20
8
48
t d ( o f f ) - Nanoseconds
35
I D = 25A
6
46
VDS = 43V
t d ( o n ) - Nanoseconds
37
4
44
76
46
80
30
42
td(off) - - - -
tf
39
VDS = 43V
70
40
47
41
TJ = 125ºC, VGS = 10V
90
t r - Nanoseconds
td(on) - - - -
t f - Nanoseconds
100
38
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
110
tr
36
I D - Amperes
40
VDS = 43V
30
20
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_152N085T (4V) 6-12-06.xls