PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGS VGSM 55 55 V V Continuous ±20 V Tranisent ±30 V ID25 IDRMS IDM TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM 110 75 250 A A A IAR TC = 25°C 110 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns G D (TAB) S TO-220 (IXTP) G TO-263 (IXTA) TJ ≤ 150°C, RG = 10 Ω PD G TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-3P TO-220 TO-263 330 W -55 ... +175 175 -55 ... +150 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. 5.5 4 3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 μA 55 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) z z D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages V z TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved g g g S (TAB) z (TO-3P / TO-220) (TAB) D S 11 5.0 V ±100 nA 25 250 μA μA 13.5 mΩ z z Easy to mount Space savings High power density DS99182A(05/05) IXTA 110N055P IXTP 110N055P IXTQ 110N055P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 23 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 36 S 2210 pF 1400 pF 550 pF td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 53 ns td(off) RG = 10 Ω (External) 66 ns tf 45 ns Qg(on) 76 nC 17 nC 33 nC VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC RthCK 0.38 K/W (TO-3P) (TO-220) 0.21 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 110 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/μs VR = 25 V QRM TO-3P (IXTQ) Outline 120 ns 1.4 μC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Pins: 1 - Gate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2 - Drain IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 220 110 VGS = 10V 9V 200 90 180 80 160 8V 70 I D - Amperes I D - Amperes 100 60 7V 50 40 30 VGS = 10V 9V 140 120 8V 100 80 7V 60 6V 20 40 10 20 6V 5V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 Fig. 3. Output Characteristics @ 150ºC 5 6 7 8 9 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 2.2 110 VGS = 10V 9V 100 VGS = 10V 2 R D S ( o n ) - Normalized 90 80 I D - Amperes 4 V D S - Volts V D S - Volts 8V 70 60 7V 50 40 6V 30 20 1.6 I D = 110A 1.4 I D = 55A 1.2 1 5V 10 1.8 0 0.8 0 0.4 0.8 1.2 1.6 2 2.4 -50 2.8 -25 0 V D S - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 120 2.8 2.6 100 2.2 TJ = 175ºC 2 1.8 1.6 VGS = 10V 1.4 I D - Amperes R D S ( o n ) - Normalized 2.4 80 60 40 VGS = 15V 1.2 TJ = 25ºC 1 20 0.8 0 0.6 0 25 50 75 100 125 150 175 200 225 250 I D - Amperes © 2005 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 8. Transconductance Fig. 7. Input Adm ittance 50 250 225 TJ = -40ºC 45 25ºC 40 200 150ºC g f s - Siemens I D - Amperes 175 150 125 100 75 TJ = -40ºC 35 25ºC 30 150ºC 25 20 15 50 10 25 5 0 0 2 3 4 5 6 7 8 9 10 0 11 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 10 VDS = 22.5V 9 250 I D = 55A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 200 Fig. 10. Gate Charge 300 150 100 6 5 4 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 V S D - Volts 30 40 50 60 70 80 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads 150 I D - Amperes 1000 C oss 25µs 100µs 100 1ms 10ms 10 DC C rss TJ = 175ºC f = 1MHz TC = 25ºC 100 1 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 IXTA 110N055P IXTP 110N055P IXTQ 110N055P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2005 IXYS All rights reserved 100 1000