Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 55 55 V V ±20 V 180 75 600 A A A G D TO-220 (IXTP) ID25 IDRMS IDM TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM IAR TC = 25°C 75 A EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 3 V/ns PD TC = 25°C 360 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C G TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) 1.13/10 Nm/lb.in. 5.5 4 3 g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 1 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V G © 2005 IXYS All rights reserved S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages V z TJ = 125°C VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % (TAB) D S TO-263 (IXTA) z RDS(on) (TAB) S 3.3 4.0 V ±200 nA 1 250 µA µA 4.0 mΩ z z Easy to mount Space savings High power density DS99342(02/05) IXTA 180N055T IXTP 180N055T IXTQ 180N055T Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 50A, pulse test 70 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 90 S 5800 pF 1190 pF 138 pF td(on) 37 ns tr VGS = 10 V, VDS = 40 V, ID = 40A 61 ns td(off) RG = 5 Ω (External) 65 ns 36 ns 160 nC 46 nC 47 nC tf Qg(on) VGS= 10 V, VDS = 30 V, ID = 90 A Qgs Qgd RthJC RthCK 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive 600 A VSD IF = 50 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.2 V t rr IF = 25 A -di/dt = 100 A/µs VR = 25 V QRM TO-3P (IXTQ) Outline 80 ns 0.4 µC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Pins: 1 - Gate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2 - Drain IXTA 180N055T IXTP 180N055T IXTQ 110N055T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 180 VGS = 10V 9V 8V 7V 160 9V 8V 100 5V 80 7V 250 6V 120 I D - Amperes I D - Amperes 140 VGS = 10V 300 60 6V 200 150 5V 100 40 50 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 2 VGS = 10V 9V 8V 7V 140 VGS = 10V 1.8 120 R D S ( o n ) - Normalized 160 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 180 6V 100 5V 80 60 40 I D = 180A 1.6 I D = 90A 1.4 1.2 1 0.8 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 V D S - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 2.2 90 External Lead Current Limit 80 2 70 TJ = 175ºC 1.8 I D - Amperes R D S ( o n ) - Normalized 2 V D S - Volts V D S - Volts 1.6 VGS = 10V 1.4 VGS = 15V 60 50 40 30 1.2 TJ = 25ºC 20 1 10 0.8 0 0 50 100 150 200 I D - Amperes © 2005 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 180N055T IXTP 180N055T IXTQ 180N055T Fig. 8. Transconductance Fig. 7. Input Adm ittance 140 250 225 120 200 100 g f s - Siemens I D - Amperes 175 150 125 100 TJ = 150ºC 75 80 60 TJ = -40ºC 25ºC 40 150ºC 25ºC 50 20 -40ºC 25 0 0 2 2.5 3 3.5 4 4.5 5 5.5 0 6 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 350 VDS = 30V 9 300 I D = 90A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 100 125 150 175 200 225 250 I D - Amperes 200 150 6 5 4 3 100 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0 20 40 V S D - Volts 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10,000 1000 I D - Amperes Capacitance - picoFarads R DS(on) Limit Ciss 1,000 Coss 25µs 100 100µs 1ms 10ms TJ = 175ºC Crss f = 1MHz DC TC = 25ºC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 IXTA 180N055T IXTP 180N055T IXTQ 180N055T Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2005 IXYS All rights reserved 100 1000