MCD44-18io1B Thyristor Module VRRM = 2x 1800 V I TAV = 49 A VT = 1.34 V Phase leg Part number MCD44-18io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD44-18io1B Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1800 V I R/D reverse current, drain current VR/D = 1800 V TVJ = 25°C 100 µA VR/D = 1800 V TVJ = 125°C 5 mA I T = 100 A TVJ = 25°C 1.34 V 1.75 V 1.34 V VT forward voltage drop min. typ. I T = 200 A TVJ = 125 °C I T = 100 A I T = 200 A I TAV average forward current TC = 85°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 1.80 V T VJ = 125 °C 49 A 77 A TVJ = 125 °C 0.85 V 180 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.24 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 980 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.62 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 6.40 kA²s TVJ = 125 °C 4.80 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 4.63 kA²s 54 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 5.3 0.53 TVJ = 125°C; f = 50 Hz repetitive, IT = 150 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 49 A 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 125°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA TVJ = 125 °C 0.2 V 10 mA TVJ = 25 °C 450 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 120 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD44-18io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C Weight 90 g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Part Number MCD44-18io1B Equivalent Circuits for Simulation I V0 R0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCD44-18io1B * on die level Delivery Mode Box mm 16.0 mm 3600 V 3000 V Quantity 6 Code No. 497649 T VJ = 125 °C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 4.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD44-18io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD44-18io1B Thyristor 104 1200 100 VR = 0 V 50 Hz, 80% VRRM 1000 DC 180° sin 120° 60° 30° 80 TVJ = 45°C 800 ITSM IFSM I2t TVJ = 45°C 600 TVJ = 125°C [A2s] [A] 60 ITAVM [A] 40 400 TVJ = 125°C 20 200 103 0 10-3 10-2 10-1 100 101 1 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 2 3 6 8 0 10 0 t [ms] RthJA 100 150 TC [°C] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 120 50 10 [K/W] 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 100 1.5 2 PT [W] 80 2.5 VG 3 60 [V] 5 40 DC 180° sin 120° 60° 30° 20 2 1 4 3 0 20 40 60 80 0 50 ITAVM, IFAVM [A] 4 100 0.1 100 150 101 TA [°C] 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 102 103 104 IG [mA] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics 1000 500 RthKA [K/W] TVJ = 25°C 0.1 0.15 400 0.2 300 0.4 200 Limit tgd 0.3 [W] typ. 100 0.25 Ptot 6 6 IGD, TVJ = 125°C 0 5 1 [µs] 0.5 Circuit B6 3x MCC44 or 3x MCD44 10 0.6 100 0 0 50 100 IdAVM [A] 0 50 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 1 10 100 1000 IG [mA] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a MCD44-18io1B Rectifier 500 RthJA [KW] 0.1 0.15 400 0.2 0.25 Ptot 300 0.3 0.4 [W] 200 100 0 0.5 Circuit W3 3x MCC44 or 3x MCD44 0 20 40 60 80 100 0.6 0 50 IRMS [A] 100 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.8 RthJC for various conduction angles d: 30° 60° DC 0.53 180° 180° 0.55 DC 120° 0.58 60° 0.60 30° 0.62 120° 0.6 0.4 Constants for ZthJC calculation: 0.2 0 10-3 10-2 10-1 100 101 102 1 0.015 0.0035 2 0.026 0.0200 3 0.489 0.1950 103 Fig. 9 Transient thermal impedance junction to case (per thyristor) 1.0 RthJK for various conduction angles d: 30° 60° 0.8 DC 180° 120° 60° 30° 120° 180° DC 0.6 0.73 0.75 0.78 0.80 0.82 Constants for ZthJK calculation: 0.4 1 2 3 4 0.2 0 10-3 10-2 10-1 100 101 102 0.015 0.026 0.489 0.200 0.0035 0.0200 0.0195 0.6800 103 Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605a