MCC95-08io1B Thyristor Module VRRM = 2x 800 V I TAV = 116 A VT = 1.28 V Phase leg Part number MCC95-08io1B Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCC95-08io1B Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 V I R/D reverse current, drain current VR/D = 800 V TVJ = 25°C 200 µA VR/D = 800 V TVJ = 125°C 5 mA I T = 150 A TVJ = 25°C 1.29 V 1.50 V 1.28 V VT forward voltage drop min. typ. I T = 300 A TVJ = 125 °C I T = 150 A I T = 300 A I TAV average forward current TC = 85°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 1.70 V T VJ = 125 °C 116 A 180 A TVJ = 125 °C 0.85 V 455 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.25 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.43 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.92 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.07 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 25.3 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 24.6 kA²s TVJ = 125 °C 18.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 17.7 kA²s 119 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 2.4 0.22 TVJ = 125°C; f = 50 Hz repetitive, IT = 250 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 116 A 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 125°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA TVJ = 125 °C 0.2 V 10 mA TVJ = 25 °C 450 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs 2.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 185 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCC95-08io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C Weight 90 g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Part Number MCC95-08io1B Similar Part MCMA110P1200TA MCMA140P1200TA Equivalent Circuits for Simulation I V0 R0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCC95-08io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 3600 V 3000 V Quantity 6 Code No. 458139 Voltage class 1200 1200 T VJ = 125 °C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 1.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCC95-08io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCC95-08io1B Thyristor 105 2500 ITSM DC 180° sin 120° 60° 30° 200 50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C 2000 250 VR = 0 V 150 I2t 1500 I TAVM [A2s] [A] 100 TVJ = 45°C [A] 1000 50 TVJ = 125°C 500 0.001 104 0.01 0.1 1 0 1 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 2 3 4 5 6 7 8 910 0 25 50 Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 250 100 tp = 30 µs tp = 500 µs RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2 3 200 150 DC 180° sin 120° 60° 30° VG [V] 1 50 125°C [W] 100 PGM = 120 W 60 W 8W 10 P = GAV 0 0.1 0.01 0 50 100 150 0 50 ITAVM, IFAVM [A] 100 IGD 0.1 Ta [°C] 1 10 IG [A] Fig. 5 Gate trigger characteristics Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) 1000 100 TVJ = 25°C RthKA K/W 800 Ptot IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 25°C Ptot 75 100 125 150 TC [°C] t [ms] 0.03 0.06 0.08 0.12 0.15 0.3 0.5 600 [W] 400 10 tgd [μs] Circuit B6 3x MCC95 or 200 limit 1 typ. 3x MCD95 0 0 100 200 300 0 IdAVM [A] 50 100 Ta [°C] Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCC95-08io1B Thyristor 1200 Circuit W3 3x MCC95 or 3x MCD95 1000 RthKA K/W 0.03 0.06 0.08 0.12 0.15 0.3 0.5 800 Ptot 600 [W] 400 200 0 0 50 100 150 200 250 0 50 IRMS [A] 100 150 Ta [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.30 RthJC for various conduction angles d: d RthJC [K/W] DC 0.22 180° 0.23 120° 0.25 60° 0.27 30° 0.28 0.25 0.20 ZthJC 30° 60° 120° 180° DC 0.15 [K/W] Constants for ZthJC calculation: 0.10 i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 0.05 0.00 10 -3 10 -2 10 -1 10 0 10 1 ti [s] 0.0019 0.0477 0.3440 10 2 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.5 RthJK for various conduction angles d: d RthJK [K/W] DC 0.42 180° 0.43 120° 0.45 60° 0.47 30° 0.48 0.4 ZthJK 0.3 [K/W] 0.2 30° 60° 120° 180° DC Constants for ZthJK calculation: i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000 0.1 0.0 10 -3 10 -2 10 -1 10 0 10 1 10 2 ti [s] 0.0019 0.0477 0.3440 1.3200 10 3 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b