IXYF40N450 - IXYS Corporation

Advance Technical Information
High Voltage XPTTM IGBT
IXYF40N450
VCES = 4500V
IC110 = 32A
VCE(sat)  3.9V
(Electrically Isolated Tab)
Symbol
Test Conditions
ISOPLUS i4-PakTM
Maximum Ratings
VCES
TC = 25°C to 150°C
4500
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
4500
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
1
5
IC25
TC = 25°C
60
A
IC110
TC = 110°C
32
A
ICM
TC = 25°C, 1ms
350
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10
Clamped Inductive Load
ICM = 120
3600
A
V
PC
TC = 25°C
290
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C

20..120 / 4.5..27
Nm/lb.in.

TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
FC
Mounting Force
VISOL
50/60Hz, 1 Minute
Weight
4000
V~
5
g
1 = Gate
2 = Emitter




BVCES
IC = 250μA, VGE = 0V
4500
VGE(th)
IC = 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
Note 2, TJ = 100°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
100
3.2
TJ = 125°C
© 2014 IXYS CORPORATION, All Rights Reserved
4.0
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Low Gate Drive Requirement
High Power Density
Applications
V
5.0
5 = Collector
Advantages

Characteristic Values
Min.
Typ.
Max.
Isolated Tab
Features

Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
2
V
25 μA
μA
±200
nA
3.9
V





Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
V
DS100617(5/14)
IXYF40N450
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfS
Characteristic Values
Min.
Typ.
Max.
IC = 40A, VCE = 10V, Note 1
18
Cies
ISOPLUS i4-PakTM (HV) Outline
30
3550
pF
146
pF
Cres
67
pF
Qg
170
nC
19
nC
70
nC
36
ns
330
ns
110
ns
1120
ns
46
ns
740
ns
118
ns
1010
ns
Coes
Qge
VCE = 25V, VGE = 0V, f = 1MHz
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Q
D
Resistive Switching Times, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 960V, RG = 2
Resistive Switching Times, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 960V, RG = 2
RthJC
U
A2
S
T
R
4
L1
1
IC = 40A, VGE = 15V, VCE = 1000V
A
E
S
2
3
c
b1
A1
e
b
e1
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
0.43 °C/W
RthCS
0.15
°C/W
Notes:
1. Pulse test, t < 300s, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute
a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYF40N450
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
280
80
VGE = 25V
19V
15V
13V
11V
70
60
13V
200
9V
50
I C - Amperes
I C - Amperes
15V
VGE = 25V
19V
17V
240
40
30
7V
11V
160
120
9V
80
20
40
10
5V
7V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
10
15
20
25
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
80
2.0
VGE = 25V
21V
17V
15V
13V
60
11V
30
VGE = 15V
1.8
I C = 80A
1.6
9V
VCE(sat) - Normalized
70
I C - Amperes
5
VCE - Volts
50
40
30
7V
1.4
I C = 40A
1.2
1.0
20
0.8
10
0.6
I C = 20A
5V
0
0.4
0
1
2
3
4
5
6
-50
7
-25
0
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
8
50
75
100
125
150
9
10
11
Fig. 6. Input Admittance
140
TJ = 25ºC
7
120
100
5
I C - Amperes
6
V CE - Volts
25
TJ - Degrees Centigrade
I C = 80A
4
40A
80
60
40
3
2
TJ = 125ºC
25ºC
- 40ºC
20
20A
0
1
5
10
15
20
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
25
3
4
5
6
7
VGE - Volts
8
IXYF40N450
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
50
TJ = - 40ºC
45
VCE = 1000V
14
I C = 40A
40
30
125ºC
VGE - Volts
g f s - Siemens
12
25ºC
35
I G = 10mA
25
20
10
8
6
15
4
10
2
5
0
0
0
20
40
60
80
100
120
0
140
20
40
I C - Amperes
60
80
100
120
140
160
180
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
140
10,000
100
1,000
I C - Amperes
Capacitance - PicoFarads
120
Cies
Coes
80
60
100
40
TJ = 125ºC
Cres
RG = 10Ω
dv / dt < 10V / ns
20
f = 1 MHz
0
10
0
5
10
15
20
25
30
35
500
40
1000
1500
2000
2500
3000
3500
4000
4500
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: Y_40N450(H8) 5-28-14