Low Dose Rate Ionizing Radiation Test Report MSK196RH, (MSK496RH) RAD Hard (QUAD) Precision Rail To Rail Current Sense Amplifier April 11, 2014 (Low Dose Rate TID, WAFER LOT: WD005624.3 WF# 7) Revised May 22, 2014 P. Musil, B. Horton; M.S. Kennedy Corporation S. Rezgui; Linear Technology Corporation 1 I. Introduction: The Low Dose Rate ionizing radiation test for the MSK196RH was conducted in cooperation with Linear Technology Corporation to qualify the devices as RAD HARD to 50KRADS(Si), per MIL-STD883 Method 1019.8 Condition D. The testing was performed beyond 50KRADS(Si) to show trends in device performance as a function of total dose. The over test does not classify maximum radiation tolerance of the device, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. The MSK196RH, and MSK496RH both use the same active components. The data in this report is from direct measurement of the MSK196RH response to irradiation but it is indicative of the response of both devices and is applicable to both. II. Radiation Source: Sample irradiation was performed at the Defense Microelectronics Activity, Science and Engineering Gamma Irradiation Test Facility using a Co-60 source. The dose rate was determined to be ≤10 mRads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All devices received 240 hours of burn-in per MIL-STD-883 Method 1015 and were fully screened IAW MIL-PRF-38535 Class V. All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. For test platform verification, one control device was tested at 25°C. Fifteen devices were then tested at 25°C, prior to irradiation, and were found to be within acceptable test limits. During irradiation; Five devices were biased at low side sense condition (VS+ = 0.1V) and a power supply rail of 36V. Five devices were biased at high side sense condition (VS+ = 36V) and a power supply rail of 36V. Five devices had all leads grounded during irradiation for the unbiased condition. Electrical testing was performed on the irradiated devices, as well as the control device, at each total dose level. All post irradiation electrical test point procedures were conducted in accordance with the constraints imposed by MIL-STD-883 Method 1019.8 Condition D. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices independently. If required, full test data can be obtained by contacting M.S. Kennedy Corporation. V. Summary: The acceptance criteria for each parameter is determined by post irradiation specification compliance of the statistical .99/90 one sided tolerance band. Based on the test data recorded during radiation testing, the MSK196RH and MSK496RH qualify as a 50KRADS(Si) low dose rate radiation hardened devices. Voltage Gain Error and Input Offset voltage exhibited the most significant shift due to irradiation. PSRR test data exhibits convergence towards a much tighter distribution with dose, however at the different rates up to 25 KRADS(Si) . PSRR test data is likely skewed by the noise floor measurement system, thus acceptance is based on the 50KRADS(Si) statistical .99/90 tolerance band. All other parameters stayed within pre-irradiation specification up to 100KRADS(Si). 2 MSK 196RH Biased/Unbiased Low Dose Rate Schedule Dosimetry Equipment Radcal Model No. 9010 Radiation Monitor Radcal Model No. 90X5-.18 Electrometer/ Ion Chamber Incremental Dose Test Points rads(Si) Cumulative Dose rads(Si) 25K 25K 25K 50K 25K 25K 75K 100K High Side Biased S/N – 0961, 0962, 0963, 0964, 0965 Low Side Biased S/N – 0956, 0957, 0958, 0959, 0960 Unbiased S/N – 0950, 951, 0952, 0953, 0954 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose 3 4 5 6 7 8 9