TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays SESD Series Enhanced ESD Diode Arrays RoHS Pb GREEN ELV Description The SESD Series Enhanced ESD Diode Arrays provides higher order ESD protection in signal-integrity-preserving unidirectional arrays for the world’s most challenging high speed serial interfaces. Compelling packaging options including the standard 2.5mmx1.0mm and the SOD-883. Standard packages minimizes trace layout complexity, saves significant PCB space, and improves reusability of the footprints. The nominal capacitance makes the devices applicable to the worlds’ fastest consumer serial interfaces. Pinout Features • 0.30pF TYP capacitance 1004 DFN array 1 2 3.G 4 5 • ESD, IEC61000-4-2, ±22kV contact, ±22kV air 10 9 8.G 7 • Low clamping voltage of 13V @ IPP=2.2A (tP=8/20μs) 6 0402 DFN array 1 Functional Block Diagram • Ultra-high speed data lines • C onsumer, mobile and portable electronics • USB 3.1, 3.0, 2.0 • Tablet PC and external storage with high speed interfaces • HDMI 2.0, 1.4a, 1.3 4 • ELV Compliant Applications Bottom View 2 • Facilitates excellent signal integrity 2 3 1 • Low profile 1004 and 0402 DFN array packages 5 • DisplayPort(TM) 1 2 • V-by-One® • Thunderbolt (Light Peak) G, 3, 8 3 1004 DFN array 0402 DFN array © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 • Applications requiring high ESD performance in small packages TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Absolute Maximum Ratings Symbol Thermal Information Parameter Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Parameter Value Units IPP Peak Current (tp=8/20μs) 2.2 A Storage Temperature Range TOP Operating Temperature -55 to 125 °C TSTOR Storage Temperature °C -55 to 150 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1004 DFN Array Electrical Characteristics - (TOP=25°C) Parameter Test Conditions Min Typ Max Units Input Capacitance @ VR = 0V, f = 3GHz 0.30 pF Breakdown Voltage VBR @ IT=1mA 8.80 V Reverse Working Voltage 7.0 IL @ VRWM=5.0V Reverse Leakage Current VCL @ IPP=2.2A Clamping Voltage ESD Withstand Voltage IEC61000-4-2 (Contact) ±22 IEC61000-4-2 (Air) ±22 V 25 nA 13.0 V kV 0402 DFN Array Electrical Characteristics - (TOP=25°C) Parameter Test Conditions Min Typ Input Capacitance @ VR = 0V, f = 3GHz 0.30 Breakdown Voltage VBR @ IT=1mA 8.80 Max Units pF V Reverse Working Voltage 7.0 V Reverse Leakage Current IL @ VRWM=5.0V 25 nA Clamping Voltage VCL @ IPP=2.2A 13.0 V ESD Withstand Voltage IEC61000-4-2 (Contact) ±22 IEC61000-4-2 (Air) ±22 Insertion Loss Diagram - SESD 1004Q4UG-030-088 Insertion Loss Diagram - SESD0402Q2UG-0030-088 0 0 -5.0 S21 Insertion Loss (dB) S21 Insertion Loss (dB) -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 1.E+06 kV 1.E+07 1.E+08 Frequency (Hz) 1.E+09 1.E+10 -10.0 -15.0 -20.0 -25.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Device IV Curve 1.0 0.8 0.6 0.4 Current (mA) 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Product Characteristics of 0402 DFN Package Ramp-down Rate 6°C/second max Lead Plating Pre-Plated Frame Time 25°C to peak Temperature (TP) 8 minutes Max. Lead Material Copper Alloy Do not exceed 260°C Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Package Dimensions — 1004 DFN Array A1 D Symbol LxN 4 L1 2x Gnd 8 2xR 1 N=10 e A3 Pin 1 ID Marking Location SIDE VIEW 1 TOP VIEW END VIEW 1 b1 2x 9 2 e1 R1 Gnd 3 E A SIDE VIEW 2 (Front) BOTTOM VIEW END VIEW 2 2x F A 2x F1 2x F1 2x D1 B G1 4x G B D1 G1 4x G 8x D 4x G 8x D E E 8x C Inches Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0.00 0.02 0.05 0 -- 0.002 0.127 ref. 0.005 ref. D 0.90 1.00 1.10 0.035 0.039 0.043 E 2.40 2.50 2.60 0.094 0.098 0.102 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.35 0.40 0.45 0.014 0.016 0.018 L 0.33 0.38 0.43 0.013 0.015 0.017 L1 0.00 0.10 0.15 0.000 0.004 0.006 e 0.50 BSC 0.020 BSC e1 0.50 BSC 0.020 BSC R 0.08 BSC 0.003 BSC R1 0.13 BSC 0.005 BSC N 10 10 Symbol 2x F A Millimeters Min A3 7 5 6 8xb Millimeters Inches A 1.20 0.047 B 2.20 0.087 C 0.50 0.020 D 0.20 0.008 D1 0.40 0.016 E 0.20 0.008 F 0.30 0.012 F1 0.20 0.008 G 0.50 BSC 0.020 BSC G1 1.00 BSC 0.039 BSC 8x C Recommended Alternate Pad Layout © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Package Dimensions — 0402 DFN Array Symbol Millimeters Inches Min Typ Max Min Typ A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 0.65 0.022 0.024 0.026 A3 0.13 ref. 0.60 Max 0.005 ref. D 0.55 E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 L2 0.20 0.25 0.30 0.008 0.010 0.012 b 0.14 0.19 0.24 0.006 0.007 0.009 e1 0.35 BSC 0.014 BSC e2 0.65 BSC 0.026 BSC Symbol Millimeters Inches A 0.60 0.024 B 1.00 0.039 C 0.23 0.009 0.014 D 0.35 D1 0.35 0.014 E 0.15 0.006 F 0.30 0.012 Pad Layout Part Numbering System Part Marking System SESD xxxx Q x U G 0030 – 088 SESD product Package 0402 1004 Breakdown Voltage 088: 8.8V (TYP) Input Capacitance 0030: 0.30pF (TYP) DFN Array Package Common GND pin No of channel 2: Two Channels 4: Four Channels Directional U: Unidirectional D D 4D 4D 0402 1004 Ordering Information Part Number Package Marking Ordering Part Number Reel Quantity SESD0402Q2UG-0030-088 0402 DFN Array I D RF3925-000 50000 SESD1004Q4UG-0030-088 1004 DFN Array I 4D RF3923-000 25000 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15 TVS Diode Arrays (SPA® Diodes) SESD Series Enhanced ESD Diode Arrays Embossed Carrier Tape & Reel Specification — 1004 DFN Array D0 T P2 Y P0 E1 D1 F B0 W K0 A0 Section Y - Y P1 Y Symbol Millimeters A0 B0 D0 D1 E1 F K0 P0 P1 P2 W T 1.20 ± 0.05 2.70 ± 0.05 ø 1.50 + 0.10/-0 ø 0.50 min 1.75 ± 0.10 3.50 ± 0.05 0.51 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 +0.03 / -0.10 0.25 ± 0.05 Embossed Carrier Tape & Reel Specification — 0402 DFN Array D0 T Y P0 P2 E1 D1 F B0 K0 Section Y - Y A0 Y P1 W Symbol Millimeters A0 B0 D0 D1 E1 F K0 P0 P1 P2 W T 0.70+/-0.05 1.15+/-0.05 ø 1.55+ 0.05 ø 0.40+/- 0.05 1.75+/-0.10 3.50+/-0.05 0.47+/-0.05 4.00+/-0.10 2.00+/-0.10 2.00+/-0.05 8.00+/-0.10 0.20+/-0.05 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/26/15