2N5401(PNP)

2N5401(PNP)
TO-92 Bipolar Transistors
TO-92
1.
EMITTER
2.
BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160v)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Tstg
-5
V
-0.6
A
0.625
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-150
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -120 V,
Emitter cut-off current
IEBO
VEB= -3V, IC=0
IE=0
-50
nA
-50
nA
hFE(1)
VCE= -5V, IC=-1 mA
80
hFE(2)
VCE= -5V, IC= -10 mA
60
hFE(3)
VCE= -5V, IC=-50 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC= -50mA, IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -50mA, IB= -5 mA
-1
V
300
MHz
DC current gain
Transition frequency
fT
VCE=-5V,
f =30MHz
IC=-10mA
100
240
2N5401(PNP)
TO-92 Bipolar Transistors
Typical Characteristics