2N5911/5912 - New Jersey Semiconductor

, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N5911/5912
PRODUCT SUMMARY
Part Number
Vos(off) (V)
V(BR)GSS Win (V)
gfs Win (mS)
IG TVp(pA)
|VGsi-VGS2lMax(mV)
2N5911
~1to~5
-25
5
10
2N5912
-1 to -5
-25
5
-1
-1
15
FEATURES
BENEFITS
APPLICATIONS
•
•
•
•
•
•
• Minimum Parasitics Ensuring Maximum
High-Frequency Performance
• Improved Op Amp Speed, Settling Time Accuracy
• Minimum Input Error/Trimming Requirement
• Insignificant Signal Loss/Error Voltage
• High System Sensitivity
• Minimum Error with Large Input Signal
• Wideband Differential Amps
• High-Speed, Temp-Compensated,
Single-Ended Input Amps
• High Speed Comparators
• Impedance Converters
Two-Chip Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 1 pA
Low Noise
High CMRR: 85 dB
DESCRIPTION
The 2N5911/5912 are matched pairs of JFETs mounted in a
TO-78 package. This two-chip design reduces parasitics and
gives better performance at high frequencies while ensuring
extremely tight matching.
TO-78
Si
D2
Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
Lead Temperature (V16" from case for 10 sec.)
Storage Temperature
Operating Junction Temperature
-
-25 V
i 80 V
50 mA
300'C
. -65 to 200° C
-5Sto150"C
Power Dissipation :
Per Side 3 .
Totalb .
367 mW
500 mW
Notes
a. Derate 3 mW/'C above 25 C
b. Derate 4 mW/<• C above 25" C
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
2 N 5911/5912
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Limits
2N5911
Parameter
Symbol
Test Conditions
Typa
Min
Max
2N5912
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
V(BR)GSS
IG = -1 nA, VDS = o v
-35
-25
VGS(ofT)
V D s= 10V, I D =1 nA
-3,5
-1
'DSS
VDS= i°v, VGS- o v
VGS = -15 v, VDS = O v
15
7
40
mA
-1
-100
-100
PA
-2
-250
-250
nA
-1
-100
-100
PA
-100
nA
loss
TA = 150"C
VDO= 10V, ID =5 mA
Gate Operating Current
Gate-Source Voltage
Gate-Source
Forward Voltage0
IG
TA = 125"C
-0,3
VGS
VDG = 10 V, IQ = 5 mA
-1.5
vGs(F)
IG = 1 mA, VDS = 0 V
0.7
-25
-5
-1
40
7
-100
-0,3
-4
-0.3
v
-5
-4
V
Dynamic
Common-Source
Forward Transconductance
9fs
Common-Source
Output Conductance
9os
Common- Source
Forward Transconductance
9ts
Common-Source
Output Conductance
9os
Common-Source
Input Capacitance
Qss
Common-Source Reverse
Transfer Capacitance
crss
Equivalent Input
Noise Voltage
in
Noise Figure
NF
6
V D G =10V, I D = 5 m A
f = 1 kHz
70
5.8
V D G =10V, I D = 5mA
f = 100 MHz
5
10
5
100
5
10
5
10
mS
100
US
10
mS
us
90
150
150
3
5
5
1
12
1.2
4
20
20
nV/
VHz
0.1
1
1
dB
VDG = 10V, ID = 5mA
4
10
15
mV
VDQ^ 10V, ID = 5mA
T A =-55to125°C
15
20
40
(,V,C
V DG = 10V, I D = 5mA
f = 1 MHz
V D G =10V, I D = 5mA
f= 10kHz
R0 = 100kQ
PF
Matching
Differential
Gate-Source Voltage
Gate-Source Voltage
Differential Change
with Temperature
Saturation Drain
Current Ratio
|VGS1-VGS2l
A|V GS1 -V OS2 |
AT
'DSSI
Transconductance Ratio
fe
Differential Gate Current
Common Mode
Rejection Ratioc
0.98
0.95
1
095
1
0,98
095
1
0,95
1
'DSS2
IferW
CMRR
VDS= 10 V, ID = 5mA
f = 1 kHz
VQC = 1 0 V, ID = 5 mA, TA = 1 25 C
VDG = 5 to 10 V, ID = 5 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b Pulse test: PW < 300 |ts duty cycle « 3%
c This parameter not registered with JEDEC.
0005
85
20
20
nA
dB