HF220-28 - Advanced Semiconductor, Inc.

HF220-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF220-28 is 28 V epitaxial
planar transistor, designed for SSB
and VHF communications. The device
utilizes emitter ballasting for improved
ruggedness and reliability.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
E
FULL R
• PG = 12 dB min. at 220 W/30 MHz
• IMD3 = -30 dBc max. at 220 W (PEP)
• Omnigold™ Metalization System
• 30 MHz @ 28 V operations
• IMD –30 dBc
16 A
VCBO
70 V
B
VEBO
E
B
E
H
D
G
F
K
I J
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
35 V
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
E
4.0 V
MAXIMUM
.125 / 3.18
B
VCEO
Ø.125 NOM.
C
MAXIMUM RATINGS
IC
C
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
.003 / 0.08
.007 / 0.18
PDISS
320 W @ TC = 25 °C
H
I
.090 / 2.29
.110 / 2.79
TJ
-65 °C to +200 °C
J
.150 / 3.81
.175 / 4.45
TSTG
-65 °C to +150 °C
.980 / 24.89
1.050 / 26.67
θJC
0.6 °C/W
.280 / 7.11
K
CHARACTERISTICS
L
ORDER CODE: ASI10609
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 100 mA
70
V
BVEBO
IE = 20 mA
4.0
V
ICEO
VCE = 30 V
5.0
mA
ICES
VCE = 35 V
5.0
mA
hFE
VCE = 5.0 V
60
---
COB
VCB = 28 V
---
pF
IC = 7.0 A
15
f = 1.0 MHz
---
450
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
ERROR! REFERENCE SOURCE
NOT FOUND.
HF220-28
CHARACTERISTICS
GP
TC = 25 °C
VCE = 28 V
ICQ = 750 mA
POUT = 220 W
12
---
IMD3
ηC
Load
Mismatch
F1 = 30.000MHz
VCE = 28 V
IMPEDANCE DATA
FREQ
ZIN (Ω
Ω)
30 MHz
1.15 + J0.41
f2 = 30.001 MHz
ICQ = 750 mA
-30
40
POUT = 220 W
---
dB
dBc
%
∞:1
---
VSWR
ZCL (Ω
Ω)
1.25 + J1.92
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2