HVVI HVV1214-100

The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
For Ground Based Radar Applications
TM
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE
Class AB
η
FREQUENCY
VDD
IDQ
Power
GAIN
(MHz)
(V)
(mA)
(W)
(dB)
(%)
(dB)
IRL
1400
50
100
120
20
45
-8
VSWR
20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 200µs and pulse period = 2ms.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology
produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching
with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1214-100
Demo Kit Part Number: HVV1214-100-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
1
HVV1214-100 HighThe
Voltage,
High Ruggedness
innovative Semiconductor Company!
L-Band Radar Pulsed
Power Transistor
HVV1214-100
High Voltage,
High Ruggedness
1200-1400
MHz,
200µs
Pulse,
10% Duty High Voltage, High Ruggedness
HVV1214-100
L-Band
Radar
Pulsed
Power
Transistor

For
GroundMHz,
Based
Radar
Applications
1200-1400
200µs
Pulse,
10% Radar
Duty Pulsed Power Transistor

L-Band

For
Ground Based Radar Applications
1200-1400 MHz, 200μs Pulse, 10% Duty

TM
For Ground Based Radar Applications
TheThe
innovative
Semiconductor
Company!
innovative
Semiconductor
Company!


ELECTRICAL CHARACTERISTICS
ELECTRICAL
CHARACTERISTICS
ELECTRICAL
CHARACTERISTICS





Symbol


BR(DSS)

 
V



IDSS




IGSS



 1
GP 




 1
IRL





ηD1
  2
VGS(Q)
 
 VTH
 PULSE

Parameter



Drain-Source
Breakdown




Drain
Leakage Current



Gate
Leakage
Current


Power
Gain


Input
Return Loss


Drain
Efficiency

Gate
Quiescent Voltage

Threshold Voltage

Conditions
Min



VGS=0V,ID=5mA
95



VGS=0V,VDS=50V


VGS=5V,VDS=0V


F=1400MHz
18


F=1400MHz


F=1400MHz
43

VDD=50V,IDQ=100mA
1.1

VDD=5V, ID=300µA
0.7
CHARACTERISTICS
 PULSE
CHARACTERISTICS
Pulse CHARACTERISTICS
THERMAL
PERFORMANCE
Thermal
PERFORMANCE



















 RUGGEDNESS PERFORMANCE





Typical
Max






102
  


200
50




 1
5




 20

 

 -8
-5




45
1.45

1.8
1.2
1.7




Unit 



 V





 µA 




μA 



 dB 


 dB 


%

 V

V


Min  Typical
Max


- 

- 
- 


<25  50

<15  50
0.35  0.5




Unit




nS 



nS 

 dB 


RUGGEDNESS PERFORMANCE






 










The
HVV1214-100
device
is
capable
of
withstanding
an
output
load mismatch
to a 
20:1 VSWR
      
corresponding
 













at rated output power and nominal operating voltage across the frequency band of operation.


         


1
NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the

1.)point
NOTE:
Allpulse
parameters
measured
under pulsed
conditions
120W
output
5%
of the
with pulse
width = 200µsec,
duty cycle
= 10% andat
VDD
= 50V,
IDQ =power
100mA in a

measured at the 5%
of the pulse with pulse width = 200µsec, duty cycle = 10%
broadband
testpoint
fixture.
1.) NOTE:matched
All parameters
measured under pulsed conditions at 120W output power
2 and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
NOTE:
Amount
required
to attain
quiescent
current. duty cycle = 10%
measured
at of
thegate
5%voltage
point of
the pulse
withnominal
pulse width
= 200µsec,
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
HVVi
Inc.Inc.
HVViSemiconductors,
Semiconductors,
10235 S. 51st St. Suite 100
10235
S. 51st St. SuiteInc.
100
HVVi
Semiconductors,
Phoenix,
Az.st 85044
Phoenix,
10235
S. 51AZ.
St.85044
Suite 100
Phoenix, Az. 85044
ISO
9001:2000Certified
Certified
ISO
9001:2000
Tel:
(866)
429-HVVi
(4884)
or
visit
www.hvvi.com
Tel: (866) 429-HVVi
(4884) or Certified
visit
www.hvvi.com
ISO
9001:2000
©
2008
HVVi
Semiconductors,
Inc.
All
Rights
Reserved.
© 2008
HVVi Semiconductors,
All Rights
Reserved.
Tel: (866)
429-HVVi (4884)Inc.
or visit
www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.








RUGGEDNESS PERFORMANCE

 






  



Symbol
Parameter
Conditions







Rise
Time
F=1400MHz
T r1





1
Fall
Time
F=1400MHz

 T f




PD1
Pulse
Droop
F=1400MHz
 THERMAL PERFORMANCE


EG-01-DS06A
EG-01-DS06A
12/12/08
12/11/08
EG-01-DS06A
2
2
12/12/08
2

The innovative Semiconductor Company!
HVV1214-100 High Voltage,HVV1214-100
High Ruggedness
High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse,1200-1400
10% DutyMHz, 200μs Pulse, 10% Duty

For
Ground Based Radar Applications

For Ground Based Radar Applications
TM
The innovative Semiconductor Company!
Zo = 10 
ZIN*
ZOUT*
1200MHz
1200MHz
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
HVVi
Semiconductors,
Inc.
Phoenix,
Az. 85044
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
ISO 9001:2000Inc.
Certified
© 2008 HVVi Semiconductors,
All Rights Reserved.
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/12/08
EG-01-DS06A
3
12/11/08
3
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs
Pulse,
10%
Duty
The
innovative
Semiconductor
Company!

For
Ground Based Radar Applications
HVV1214-100 High Voltage, High Ruggedness
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
L-Band Radar Pulsed Power
Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
1200-1400 MHz, 200µs Pulse, 10% Duty
For Ground Based Radar Applications

For
Ground Based Radar Applications
TM
The innovative Semiconductor Company!



















Demonstration
Board Outline
 Demonstration
Board Outline
Demonstration Circuit Board Picture
Demonstration Circuit Board Picture
Board Board
Outline available online
Demonstration
Circuit Board Picture
(AutoCAD Files forDemonstration
Demonstration
at www.hvvi.com/products)
(AutoCAD
Files
for
Demonstration
Board
available
online
at
www.hvvi.com/products)
(AutoCAD
Files
for
Demonstration
Board
available
online
at
www.hvvi.com/products)







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
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

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




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



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

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
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

HVV1214-100 Demonstration Circuit Board Bill of Materials
HVV1214-100 Demonstration Circuit Board Bill of Materials
Circuit
Board Bill of Materials
HVVi Semiconductors, Inc.HVV1214-100 Demonstration
ISO 9001:2000
Certified
10235 S. 51st St. Suite 100
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
Phoenix, Az. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
EG-01-DS06A
12/12/08
4
EG-01-DS06A
12/11/08
4
EG-01-DS06A
12/12/08
The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
TM
HVV1214-100 High Voltage,1200-1400
High Ruggedness
MHz, 200μs Pulse, 10% Duty
L-Band Radar Pulsed Power For
Transistor
Ground Based Radar Applications
1200-1400 MHz, 200µs Pulse, 10% Duty

For
Ground Based Radar Applications
 PACKAGE DIMENSIONS
The innovative Semiconductor Company!
PACKAGE DIMENSIONS















DRAIN
GATE
SOURCE

Note: Drawing is not actual size.
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published
in this document at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof. Information in this document is believed to
be accurate and reliable. However, HVVi does not give any representations or warranties, either
express or implied, as to the accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. Use of HVVi products as critical components in
life support systems is not authorized. No licenses, either express or implied, are conveyed under
any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are
trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property
rights, including any patent rights. The HVVi
name and logo are trademarks of HVVi Semiconductors,
ISO 9001:2000 Certified
EG-01-DS06A
HVVi Semiconductors, Inc.
Inc.
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
12/11/08
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
5
EG-01-DS06A
12/12/08