RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . D G D FEATURES GD S TO-220AB (7 N60A ) RDS(ON) = 1.0Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (C RSS = 16pF typical) D (Drain) Improved dv/dt capability 150°C operation temperature G G (Gate) S PRODUCT SUMMARY TO-263(D2PAK) (7N60H) 7 VDSS (V) TO-220F (7N60AF) D Fast switching capability 100% avalanche energy specified ID (A) S S (Source) 600 RDS(ON) (Ω) 1.0 @ V GS = 10V QG(nC) max. 38 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 7 Continuous Drain Current T C =100°C 4.3 A I DM Pulsed Drain current(Note 1) I AR Avalanche current(Note 1) E AR Repetitive avalanche energy(Note 1) I AR =7A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) I AS =7A, L=19.5mH 28 7 14 mJ dv/dt PD 4.5 Peak diode recovery dv/dt(Note 3) TO-220AB/TO-263 Total power dissipation T C =25°C TO-220F TJ T STG TL Operation junction temperature V /ns 140 48 W -55 to 150 -55 to 150 Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case Page 1 of 8 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. . 2 . I AS = 7 A, V DD = 50V, L = 19.5mH, R GS = 25Ω, starting T J =25°C. 3 . I SD ≤ 7 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 25°C. www.nellsemi.com 500 lbf . in (N . m) RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Min. Typ. TO-220AB/TO-263 Thermal resistance, junction to case 0.85 2.5 TO-220F Rth(j-a) Thermal resistance, junction to ambient UNIT Max. TO-220AB/TO-263 62.5 TO-220F 62.5 ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS ▲V (BR)DSS/▲T J I DSS PARAMETER TEST CONDITIONS Drain to source breakdown voltage I D = 250µA , V GS = 0V Breakdown voltage temperature coefficient I D = 250µA, V DS =V GS Drain to source leakage current Min. Typ. Max. 600 V 0.53 V/ºC V DS =600V, V GS =0V T C = 25°C 10 V DS =480V, V GS =0V T C =125°C 100 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D =3.5A, V GS = 10V V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA I GSS nA C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) tf QG UNIT Rise time Turn-off delay time 0.85 1.0 Ω 4 V 2 1400 V DS = 25V, V GS = 0V, f =1MHz 180 16 pF 21 70 170 V DD = 300V, V GS = 10V, l D = 7A, R GS = 25Ω (Note 1 , 2 ) ns 140 Fall time 130 Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) 28 V DD = 480V, V GS = 10V, I D = 7A (Note 1, 2) 38 7 nC 14 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Diode forward voltage I SD = 7A, V GS = 0V Continuous source to drain current Integral reverse P-N junction diode in the MOSFET Min. Typ. Max. UNIT 1.4 V 7 D (Drain) A I SM Pulsed source current 28 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 7A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% . 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 8 320 ns 2.4 µC RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION SCHEME 7 N 60 A Current rating, ID 7 = 7A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F H = TO-263(D²PAK) Fig.1 On-State characteristics Fig.2 Transfer characteristics 10 1 10 3 Top: 12V 10V 8V 7V 6.5V 6 V 5.5V Bottorm: 5 V Drain current,l D (A) Drain current, l D (A) V GS 10 0 *Notes: 1.250µs Pulse test 2.T c =25°C 10 -1 10 1 150°C 10 25°C *Notes: 1.V DS =50V 2.250µs Pulse test 10 -1 10 3 10 2 -55°C 0 2 Drain-to-Source voltage, V DS (V) 10 8 Gate-Source voltage, V GS (V) Fig.3 On-resistance variation vs. drain current and gate voltage Fig.4 Body diode forward voltage variation with source current and temperature 10 1 3.5 Reverse Drain current , l SD (A) Drain-Source on-resistance, R DS(ON) (Ω) 6 4 3 V GS =10V 2.5 2 V GS =20V 1.5 1.0 *Note:T J =25°C 5 10 15 20 Drain current, I D (A) www.nellsemi.com 0 150°C 10 -1 0.2 0.5 0 10 0.4 0.6 25°C 0.8 *Notes: 1.V GS =0V 2.250μs Pulse test 1.0 1.2 Source-drain voltage, V SD (V) Page 3 of 8 1.4 RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics 2000 Capacitance (pF) 1600 1400 C ISS 1200 1000 C OSS 800 Notes: 1.V GS =0V 2.f=1MHz 600 400 C RSS 200 Gate-Source voltage,V GS (V) 12 C ISS =C GS +C GD (C DS =shorted) C OSS =C DS +C GD C RSS =C GD 1800 10 V DS = 120V V DS = 300V 8 V DS = 480V 6 4 2 *Note:I D =7A 0 0 10 1 0 100 1.2 1.1 1 *Notes: 1.V GS =0V 2.I D =250µA -50 0 50 100 150 200 3 2.5 2 1.5 1 *Notes: 1.V GS =10V 2.I D =4A 0.5 0.0 -100 -50 Junction temperature, T J (°C) 0 100 50 Fig.10 Maximum safe operating area for TO-220F 10 2 10 2 Operation in This Area is Limited by RDS(on) Drain current, I D (A) Drain Current, l D (A) Operation in This Area is Limited by RDS(on) 100µs 1ms 10ms 100ns DC 10 0 *Notes: 1.T J =25°C 2.T=150°C 3. Single pulse 10 -1 10 -2 10 0 10 1 10 2 10µs 100µs 10 1 1ms 10ms 100ms 10 0 DC 10 -1 *Notes: 1.T J =25°C 2.T J =150°C 3. Single pulse 10 -2 10 0 10 3 Drain-source voltage, V DS (V) www.nellsemi.com 200 150 Junction temperature, T J (°C) Fig.9 Maximum safe operating area for TO-220 10 1 30 Fig.8 On-resistance variation vs. Junction temperature Drain-Source on-resistance, R DS(ON) Drain-source breakdown voltage, BV DSS Fig.7 Breakdown voltage variation vs. Junction temperature 0.8 -100 25 20 15 Total gate charge, Q G (nC) Drain-Source voltage, V DS (V) 0.9 10 5 10 1 10 2 Drain-source voltage, V DS (V) Page 4 of 8 10 3 RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.11 Maximum drain current vs. case temperature Drain current, I D (A) 8 6 4 2 0 25 50 75 100 125 150 Case temperature, T C (°C) Fig.12 Transient thermal response curve (for 7N60A & 7N60H) Thermal response, Rth(j-c) (t) 10 0 D = 0.5 Notes: 1.R th(j-c) (t)=0.85°C/W Max. 2.Duty factor, D=t1/t2 3.T JM -Tc=P DM×R th(j-c) (t) 0.2 10 -1 0.1 0.05 0.02 PDM 0.01 Single pulse t1 10 -2 t2 10 -5 10 -3 10 -4 10 -2 10 0 10 -1 10 1 Square wave pulse duration (sec.), t 1 Fig.13 Transient thermal response curve (for 7N60AF) 10 0 D = 0.5 Thermal response 0.2 0.1 Notes: 1.R th(j-c) (t)=2.5°C/W Max. 2.Duty factor, D=t1/t2 3.T JM -Tc=P DM×R th(j-c) (t) 0.05 10 -1 0.02 0.01 PDM Single pulse t1 10 -2 10 -5 t2 10 -4 10 -3 10 -2 10 -1 Square wave pulse duration (sec.), t 1 www.nellsemi.com Page 5 of 8 10 0 10 1 RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms + D.U.T. Period V GS (Driver) D= P.W. P.W. Period V DS V GS =10V + - l FM , Body Diode forward current l SD (D.U.T.) (D.U.T di/dt L l RM Body Diode Reverse Current RG Driver V GS * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test Same Type as D.U.T. V DD Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Fig.2A Switching test circuit Forward Voltage Drop Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG D.U.T. V DD V GS 10% 10V t d(ON) t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge www.nellsemi.com Page 6 of 8 RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) D (Drain) 2.79 (0.110) G (Gate) S (Source) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 8 RoHS 7N60 Series RoHS SEMICONDUCTOR Nell High Power Products Case Style TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 8 of 8