RoHS RoHS 24N50 Series SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 24A, 500Volts DESCRIPTION D The Nell 24N50 is a three-terminal silicon device with current conduction capability of 24A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. 1 G D S 2 3 TO-3PB (24N50B) TO-247AB (24N50C) D (Drain) FEATURES RDS(ON) = 0.2Ω @ VGS = 10V G (Gate) Ultra low gate charge(120nC Max.) Low reverse transfer capacitance (C RSS = 55pF typical) S (Source) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 24 VDSS (V) 500 RDS(ON) (Ω) 0.2 @ V GS = 10V QG(nC) max. 120 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 500 V DGR Drain to Gate voltage R GS =20KΩ 500 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 24 Continuous Drain Current T C =100°C 15.2 A I DM Pulsed Drain current(Note 1) 96 I AR Avalanche current(Note 1) 24 E AR Repetitive avalanche energy(Note 1) l AR =24A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =24A, L =3.4mH 29 mJ dv/dt PD Peak diode recovery dv/dt(Note 3) 15 Total power dissipation ( derate above 25 ° C) TO-247AB T C =25°C TO-3PB TJ T STG TL 290 (2.33) -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case Page 1 of 7 W( W / ° C ) ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =24 A, L =3.4 mH , V DD =50 V , R GS =25 Ω , starting T J =25 °C. 3 . I SD ≤ 24 A, di/dt ≤ 350 A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C. V /ns 270 (2.2) Operation junction temperature Mounting torque, #6-32 or M3 screw www.nellsemi.com 1100 lbf . in (N . m) 24N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heat sink Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT 0.43 ºC/W 0.24 40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 250μA, V DS =V GS Drain to source leakage current 500 V V/ºC 0.53 V DS =500V, V GS =0V T C = 25°C 50 V DS =400V, V GS =0V T C =125°C 500 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 12A V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA Forward transconductance V DS = 50V, l D = 12A (Note 1) g fs 0.16 3 0.2 Ω 5 V S 22 DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance V DS = 25V, V GS = 0V, f =1MHz 3500 4500 520 670 55 70 80 170 250 500 200 400 155 320 90 120 pF SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time V DD = 250V, V GS = 10V I D = 24A, R GS = 25Ω (Note1,2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) V DD = 400V, V GS = 10V I D = 24A, (Note1,2) 23 ns nC 52 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT V Diode forward voltage I SD = 24A, V GS = 0V 1.4 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 24 D (Drain) A I SM Pulsed source current 96 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 24A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 250 1.1 ns μC 24N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 24 N 50 B Current rating, ID 24 = 24A MOSFET series N = N-Channel Voltage rating, VDS 50 = 500V Package type B = TO-3PB C = TO-247AB ■ Gate charge test circuit & waveform V GS 12V Qg Same Type as D.U.T. 50KΩ 200nF 10V 300nF V DS V GS Q gd Q gs (D.U.T) 3mA Charge ■ Resistive switching test circuit & Waveforms V DS RL V DS 90% V DD V GS RG D.U.T. V GS 10% 10V t d(ON) www.nellsemi.com Page 3 of 7 tr t on t d(OFF) tf t off 24N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ Unclamped lnductive switching test circuit & Waveforms L V DS E AS = 1 L l AS 2 2 BV DSS BV DSS - V DD BV DSS lD l AS RG V DD l D (t) D.U.T. 10V V DD V DS (t) tp Time tP ■ Peak diode recovery dv/dt test circuit & Waveforms D.U.T. + V GS (Driver) D= Gate Pulse Width Gate Pulse Period 10V V DS l FM , Body Diode Forward Current - di/dt l SD (D.U.T) I SD L l RM Body Diode Reverse Current RG V GS Driver Same Type as DUT V DD * dv/dt controlled by R G * l SD controlled by pulse period Body Diode Recovery dv/dt V DS (D.U.T) V SD Body Diode Forward Voltage Drop www.nellsemi.com Page 4 of 7 V DD RoHS RoHS 24N50 Series SEMICONDUCTOR Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.1 On-State characteristics Fig.2 Transfer characteristics Drain current, l D (A) Drain Current, l D (A) 10 2 10 1 150ºC 10 1 25ºC 10 0 10 0 Note: 1. V DS = 50V 2. 250µs Pulse Test 10 -1 10 0 10 -1 2 10 1 8 10 Gate-Source voltage, V GS (V) Fig.3 On-Resistance variation vs. Drain current and gate voltage Fig.4 Body diode forward voltage variation with source current and temperature 10 2 0.6 Reverse drain current, l DR (A) Drain-Source On-Resistance, R DS(ON) (Ω) 6 4 Drain-Source voltage, V DS (V) 0.5 V GS = 10V 0.4 V GS = 20V 0.3 0.2 0.1 Note: T J = 25°°C 20 40 60 80 100 25ºC 10 0 Note: 1. V GS = 0V 2. 250µs Pulse Test 10 -1 0.2 0.0 0 150ºC 10 1 120 Drain current, I D (A) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig.6 Gate charge characteristics 6000 C iss = C gs +C gd ( C ds = shorted ) C oss = C ds +C gd C rss = C gd 5000 C iss 4000 Gate-Source voltage,V GS (V) 12 7000 C oss 3000 2000 0.4 Source-Drain voltage, V SD (V) Fig.5 Capacitance characteristics Capacitance (pF) -55ºC C rss Note: 1. V GS = 0V 2. f = 1 MHz 1000 V DS = 100V V DS = 250V 10 V DS = 400V 8 6 4 2 Note: l D = 24A 0 10 -1 10 0 0 10 1 0 Drain-Source voltage, V DS (V) www.nellsemi.com 20 40 60 80 Total gate charge, Q G (nC) Page 5 of 7 100 RoHS RoHS 24N50 Series SEMICONDUCTOR Nell High Power Products Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature 3.0 Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain-Source breakdown voltage, BV Dss (Normalized) 1.2 1.1 1.0 0.9 Note: 1. V GS = 0V 2. l D = 250μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note: 1. V GS = 10V 2. l D = 12A 0.5 0.0 -100 200 -50 Junction temperature, T j (°C) 0 50 100 150 200 Junction temperature, T J (°C) Fig.10 Maximum drain current vs. Case temperature Fig.9 Maximum safe operating area 25 Operation in This Area is Limited by R DS (on) 20 Drain current, l D (A) Drain current, l D (A) 10 2 10μs 100μs 1ms 10 1 10ms DC 15 10 10 0 10 -1 10 0 Note: 1.T C = 25°C 2.T J = 150°C 3.Single Pulse 5 10 1 10 2 10 3 0 25 75 50 100 Case temperature, T C (°C) Drain-Source voltage, V DS (V) Thermal response R th(J-C) (t) Fig.11 Transient thermal response curve D = 0.5 10 -1 0.2 0.1 P DM 0.05 t1 0.02 10 -2 10 -5 Notes: 0.01 Single pulse 10 -4 10 -3 Page 6 of 7 t2 1. Rth(j-c) (t) = 0.43°C/W Max. 2. Duty factor, D = t1/ t 2 3. TJM - TC = PDM * Rth(j-c) (t) 10 -1 Square wave pulse duration, t 1 (sec) www.nellsemi.com 125 10 0 10 1 150 24N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 1.8 4.0 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 4.0 max 20.0 min 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 3 5.45±0.1 G D +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 S D (Drain) 1 2 3 G (Gate) All dimensions in millimeters S (Source) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) G 4.50 (0.177)Max 19.81 (0.780) 20.32 (0.800) D Drain 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) www.nellsemi.com Page 7 of 7