50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION The Nell 50N06 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. D D G S They are designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. G D S TO-251 (50N06F) FEATURES TO-252 ( 50N06 G) D RDS(ON) = 22mΩ@VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (C RSS = 80pF typical) G D Fast switching capability 100% avalanche energy specified GD S TO-220AB ( 50N06A ) Improved dv/dt capability 175°C operation temperature S ITO-220AB (TO-220F) (50N06AF) D (Drain) PRODUCT SUMMARY ID (A) 50 VDSS (V) 60 RDS(ON) (Ω) 0.022 @ V GS = 10V QG(nC) max. 40 G (Gate) S (Source) www.nellsemi.com Page 1 of 9 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltag T J =25°C to 150°C 60 V DGR Drain to Gate voltage R GS =20KΩ 60 V GS ID Gate to Source voltage V ±20 T C =25°C 50 T C =100°C 35 Continous Drain Current A I DM Pulsed Drain current(Note 1) 200 E AS Single pulses avalanche energy(Note 2) 480 E AR Repetitive avalanche energy(Note 1) dv/dt PD T STG TL mJ 13 Peak diode recovery dv/dt(Note 3) V /ns 7 TO-251 130 TO-252 130 TO-220 120 Total power dissipation, T C =25 °C W TO-220F TJ UNIT 70 Operation junction temperature -55 to 175 Storage temperature -55 to 175 Maximum soldering temperature, for 10 seconds 300 1.6mm from case Mounting torque, #6-32 or M3 screw ºC 10 (1.1) lbf . in (N . m) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2. L = 5.6mH, I AS = 50A, V DD = 25V, R G = 0Ω, starting T J =25°C. 3. I SD ≤ 50 A, di/dt ≤ 300 A/us, V DD ≤ V (BR)DSS , starting T J =25°C. THERMAL RESISTANCE SYMBOL Rth(j-c) Min. PARAMETER Thermal resistance, junction to case Typ. Max. TO-251/TO-252 1.15 TO-220 1.24 TO-220F 1.78 UNIT ºC/W Rth(c-s) Thermal resistance, case to heatsink Rth(j-a) Thermal resistance, junction to ambient www.nellsemi.com 0.5 TO-251/TO-252 100 TO-220/TO-220F 62.5 Page 2 of 9 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS ▲V (BR)DSS/▲T J I DSS PARAMETER TEST CONDITIONS Drain to source breakdown voltage I D = 250µA, V GS = 0V Breakdown voltage temperature coefficient I D = 250µA, referenced to 25°C Drain to source leakage current V DS =60V, V GS =0V Min. Typ. Max. 60 V V/ºC 0.07 T C = 25°C 1.0 T C =150°C 50 μA Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D = 50A, V GS = 10V V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA I GSS nA C ISS Input capacitance C OSS Output capacitance C RSS t d(ON) tr t d(OFF) tf QG UNIT 18 2.0 22 mΩ 4.0 V 900 1220 430 550 Reverse transfer capacitance 80 100 Turn-on delay time 40 60 100 200 90 180 80 160 30 40 Rise time Turn-off delay time V DS = 25V, V GS = 0V, f =1MHz V DD = 30V, I D = 25A, R G =50Ω (Note 1, 2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) V DS = 48V, V GS = 10V, I D = 50A (Note 1, 2) 9.6 pF ns nC 10 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD IS PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 50A, V GS = 0V 1.5 Continous source current Integral reverse P-N junction diode in the MOSFET 50 D (Drain) A I SM Pulsed source current 200 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I S = 50A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 9 55 ns 80 nC 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 50 N 06 A Current rating, ID 50 = 50A MOSFET series N = N-Channel Voltage rating, VDS 06 = 60V Package type A = TO-220AB AF = TO-220F F = TO-251 ( I-PAK) G = TO-252(D-PAK) ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 4 of 9 Forward Voltage Drop 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) Fig.3A Gate charge test circuit 12V tF Fig.3B Gate charge waveform QG Same Type as D.U.T. 50kΩ 0.2µF t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% 10V 0.3µF V DS Q GS Q GD V GS D.U.T. VG 1mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS RG V DD D.U.T. 10V tp l AS Time tp www.nellsemi.com Page 5 of 9 Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.1 On-State characteristics 4.5V 0º 10 1 25ºC 10 1 15 5V Bottorm: 4.5V C 10 2 7V 6V 5.5V Drain current, l D (A) Drain Current, l D (A) Fig.2 Transfer characteristics V GS Top: 15V 10V 8V 10 2 RoHS RoHS 50N06 Series SEMICONDUCTOR Note: 1. V DS = 50V 2. 250µs Pulse Test 10 0 10 0 10 1 2 3 7 6 8 9 10 Gate-Source voltage, V GS (V) Fig.3 On-Resistance variation vs drain current and gate voltage Fig.4 On state current vs. allowable case temperature 3.5 3.0 2.5 2.0 1.5 V GS = 10V 1.0 V GS = 20V 0.5 20 40 60 150 ºC 25ºC 10 1 Note: 1. V GS = 0V 2. 250µs Test 10 0 0.2 0.0 0 10 2 80 100 120 140 160 180 200 0.4 Drain current, I D (A) Gate-to-Source voltage,V GS (V) C lSS 2000 Note: 1. V GS = 0V 2. f = 1MHz C OSS 1000 500 C RSS 0 0 5 10 15 20 25 30 35 10 1.2 1.4 1.6 V DS = 30V 8 6 V DS = 48V 4 2 Note: l D = 50A 0 0 Drain-Source voltage, V DC (V) www.nellsemi.com 1.0 12 C lSS = C GS + C GD (C DS = shorted) C OSS = C DS + C GD (C DS = shorted) C RSS = C GD 1500 0.8 Fig.6 Gate charge characteristics 3000 2500 0.6 Source-Drain voltage, V SD (V) Fig.5 Capacitance characteristics (Non-Repetitive) Capacitance (pF) 5 4 Drain-Source voltage, V DS (V) Reverse drain current, l SD (A) Drain-Source On-Resistance, R DS(ON) (mΩ) 10 0 10 -1 5 10 15 20 25 30 35 Total gate charge, Q G (nC) Page 6 of 9 40 45 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Breakdown voltage variation vs junction temperature Fig.8 On-Resistance variation vs junction temperature 3.0 1.0 0.9 Note: 1. V GS = 0V 2. l D = 250μA 10 3 -50 0 50 100 150 0 50 100 150 Fig.9 Maximum safe operating Fig.10 Maximum drain current vs. case temperature 50 40 10ms 10 1 10ms Note: 1. T C = 25 ° C 2. T J = 150°C 3. Sing Pulse 10 -1 10 -1 10 0 10 1 0.2 0.1 0.05 0.02 0.01 Single pulse 10 -3 Note: 1. R th(j-c) (t) = 1.42°C/W Max. 2. Duty Factor, D = t1/t2 3. T J -T C = P DM x R th(j-c) (t) 10 -2 10 -1 10 0 50 75 100 125 Case temperature, T C (°C) D =0.5 10 1 Square wave pulse duration, t 1 (sec) www.nellsemi.com 20 0 25 10 2 Fig.11 Transient thermal response curve 10 -4 30 10 Drain-Source voltage, V DS (V) Thermal response, R th(j-c) (t) Note: 1. V GS = 10V 2. l D = 25A 0.5 -50 100μs 10 -2 10 -5 1.0 Junction temperature, T J (°C) 1ms 10 -1 1.5 200 Operation in This Area by R DS (on) 10 0 2.0 Junction temperature, T j (°C) 10 2 10 0 2.5 0.0 0.8 -100 Drain current, l D, (A) Drain-Source On-Resistance, R Ds(ON) , (Normalized) 1.1 Drain current, l D (A) Drain-Source breakdown voltage, BV Dss (Normalized) 1.2 Page 7 of 9 150 50N06 Series SEMICONDUCTOR Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) D (Drain) 4.57(0.180) G (Gate) S (Source) www.nellsemi.com RoHS RoHS Page 8 of 9 50N06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style ITO-220AB 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 9 of 9