4N80 Series

RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(4A, 800Volts)
DESCRIPTION
The Nell 4N80 is a three-terminal silicon
device with current conduction capability of 4A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
D
G
D
FEATURES
GD
S
TO-220F
(4N80AF)
TO-220AB
(4 N80A )
RDS(ON) = 3.6Ω @ VGS = 10V
S
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(C RSS = 9pF typical)
D (Drain)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
PRODUCT SUMMARY
S (Source)
ID (A)
4
VDSS (V)
800
RDS(ON) (Ω)
3.6 @ V GS = 10V
QG(nC) max.
25
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
800
V DGR
Drain to Gate voltage
R GS =20KΩ
800
V GS
ID
Gate to Source voltage
UNIT
V
±30
T C =25°C
4
Continuous Drain Current
T C =100°C
2.5
A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1)
E AR
Repetitive avalanche energy(Note 1)
I AR =4A, R GS =50Ω, V GS =10V
E AS
Single pulse avalanche energy(Note 2)
I AS =4A, L=57mH
15.6
4
13
mJ
dv/dt
PD
TJ
T STG
TL
460
4.0
Peak diode recovery dv/dt(Note 3)
Total power dissipation (Derate above 25°C)
T C =25°C
TO-220AB
106 (0.85)
TO-220F
36 (0.29)
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
2 . I AS = 4 A, V DD = 50V, L = 57mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 4A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , starting T J = 25°C.
Page 1 of 8
W(W/°C)
ºC
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature. .
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1.6mm from case
V /ns
lbf . in (N . m)
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Min.
Typ.
TO-220AB
1.20
TO-220F
3.45
TO-220AB/TO-220F
62.5
Thermal resistance, junction to case
Thermal resistance, junction to ambient
UNIT
Max.
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
OFF CHARACTERISTICS
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
I GSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
I D = 250µA , V GS = 0V
V
800
I D = 250µA, V DS =V GS
0.95
V/ºC
V DS =800V, V GS =0V
T C = 25°C
10
V DS =640V, V GS =0V
T C =125°C
100
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
μA
nA
ON CHARACTERISTICS
R DS(ON)
Static drain to source on-state resistance
I D =2A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
Forward transconductance (Note 1)
V DS =50V, I D =2A
g fs
2.5
3.6
Ω
5
V
S
3
3.8
DYNAMIC CHARACTERISTICS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
V DS = 25V, V GS = 0V, f =1MHz
680
880
75
100
9
12
pF
SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf
QG
Q GS
Q GD
Turn-on delay time
16
40
Rise time
45
100
35
80
35
80
19
25
Turn-off delay time
V DD = 400V, V GS = 10V, l D = 4A,
R GS = 25Ω (Note 1 , 2 )
Fall time
Total gate charge
Gate to source charge
V DD = 640V, V GS = 10V, I D = 4A
(Note 1, 2)
ns
nC
4
9
Gate to drain charge (Miller charge)
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
I SM
PARAMETER
TEST CONDITIONS
Diode forward voltage
I SD = 4A, V GS = 0V
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET D (Drain)
Pulsed source current
Min.
Typ.
Max.
UNIT
1.4
V
4
15.6
G
(Gate)
A
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 4A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.
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Page 2 of 8
580
ns
3.7
µC
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION SCHEME
4
N 80
A
Current rating, ID
4 = 4A
MOSFET series
N = N-Channel
Voltage rating, VDS
80 = 800V
Package type
A = TO-220AB
AF = TO-220F
Fig.1 On-region characteristics
10
10
1
V GS
Top: 15 V
10 V
80 V
70 V
60 V
Bottorm: 5.5 V
0
10
Drain current, l D (A)
Drain current, l D (A)
10
Fig.2 Transfer characteristics
-1
*Notes:
1.250µs Pulse test
2.T c =25°C
10
10
-1
10
0
10
150°C
10
0
25°C
-1
2
1
6
4
8
10
Gate-Source voltage, V GS (V)
Drain-to-Source voltage, V DS (V)
Fig.3 On-resistance variation vs. drain
current and gate voltage
Fig.4 Body diode forward voltage variation vs.
Source current and temperature
7
Reverse Drain current , l DR (A)
Drain-source breakdown voltage, BV DSS
-55°C
*Notes:
1. V DS =50V
2.250µs Pulse test
10
-2
1
6
V GS =10V
5
4
V GS =20V
3
*Note:T J =25°C
2
10
1
10
0
150°C
*Notes:
1.V GS =0V
2.250μs Pulse test
10
0
2
4
6
8
10
-1
0
Drain current, I D (A)
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25°C
4
8
12
16
Source-drain voltage, V SD (V)
Page 3 of 8
20
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.5 Capacitance characteristics
Fig.6 Gate charge characteristics
1200
12
Gate-Source voltage,V GS (V)
C ISS =C GS +C GD (C DS =shorted)
C OSS =C DS +C GD C RSS =C GD
Capacitance (pF)
1000
C ISS
800
C OSS
600
Notes:
1.V GS =0V
2.f=1MHz
400
C RSS
200
V DS = 400V
8
V DS = 640V
6
4
2
*Note:I D =4A
0
0
10
-1
10
0
10
1
0
Fig.8 On-resistance vs. temperature
1
*Notes:
1.V GS =0V
2.I D =250µA
0.9
0.8
-100
-50
0
50
100
150
200
3
2.5
2
1.5
1
*Notes:
1.V GS =10V
2.I D =2A
0.5
0.0
-100
Junction temperature, T J (°C)
100µs
Drain Current, l D (A)
Drain Current, l D (A)
200
Operation in This Area is Limited by RDS(on)
1ms
10ms
0
10
150
10µs
1
-2
100
2
Operation in This Area is Limited by RDS(on)
10
50
Fig.9-2 Transient thermal response curve
for 4N80AF
10
-1
0
-50
Junction temperature, T J (°C)
Fig.9-1 Maximum safe operating area
for 4N80A
10
20
16
Fig.7 Breakdown voltage variation
vs. temperature
1.1
10
12
Total gate charge, Q G (nC)
1.2
10
8
4
Drain-Source voltage, V DS (V)
Drain-Source on-resistance, R DS(ON)
(Normalized)
Drain-source breakdown voltage, V (BR)DSS
(Normalized)
V DS = 160V
10
DC
*Notes:
1.T C =25°C
2.T J =150°C
3. Single pulse
0
10
1
10
2
10
3
1
100µs
1ms
10
10ms
0
DC
10
-1
10
-2
10
Drain-source voltage, V DS (V)
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10
*Notes:
1.T C =25°C
2.T J =150°C
3. Single pulse
0
10
1
10
2
10
3
Drain-source voltage, V DS (V)
Page 4 of 8
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.10 Maximum drain current vs. case
temperature
Drain current, I D (A)
4
3
2
1
0
50
25
75
100
125
150
Case temperature, T C (°C)
Fig.11-1 Transient Thermal Response Curve for 4N80A
Thermal response, Rth(j-c) (t)
10 0
D = 0.5
0.2
0.1
10 -1
PDM
0.05
t1
0.02
0.01
t2
Notes:
1.R th(j-c) (t)=1.20°C/W Max.
2.Duty factor, D=t1/t2
3.T JM -Tc=P DM×R th(j-c) (t)
Single pulse
10 -2
10 -5
10 -3
10 -4
10 -2
10 -1
10 0
10 1
Square wave pulse duration , t 1 (sec.)
Fig.11-2 Transient Thermal Response Curve for 4N80AF
Thermal response, Rth(j-c) (t)
10 1
D = 0.5
10 0
0.2
0.1
PDM
0.05
10 -1
t1
0.02
0.01
t2
Notes:
1.R th(j-c) (t)=3.45°C/W Max.
2.Duty factor, D=t1/t2
3.T JM -Tc=P DM×R th(j-c) (t)
Single pulse
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
Square wave pulse duration , t 1 (sec.)
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Page 5 of 8
10 0
10 1
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
+
D.U.T.
Period
V GS
(Driver)
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l FM , Body Diode forward current
l SD
(D.U.T.)
(D.U.T
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
Same Type
as D.U.T.
V DD
Body Diode Recovery dv/dt
V DS
(D.U.T.)
V DD
Body Diode
Fig.2A Switching test circuit
Forward Voltage Drop
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
D.U.T.
V DD
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
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Page 6 of 8
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
E AS =
L
V BR(DSS)
1
L l AS 2
2
V BR(DSS) - V DD
V DS
R BR(DSS)
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
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14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
Page 7 of 8
RoHS
4N80 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 8 of 8