20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION D The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 5 volts. TO-3PB (20N50B) G D They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. S D (Drain) FEATURES G (Gate) RDS(ON) = 0.23Ω@VGS = 10V S (Source) Ultra low gate charge(60nC max.) Low reverse transfer capacitance (C RSS = 27pF typical) PRODUCT SUMMARY ID (A) 20 VDSS (V) 500 RDS(ON) (Ω) 0.23 @ V GS = 10V QG(nC) max. 60 Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 500 V DGR Drain to Gate voltage R GS =20KΩ 500 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 20 Continuous Drain Current T C =100°C 12.4 A I DM Pulsed Drain current(Note 1) 80 I AR Avalanche current(Note 1 ) 20 E AR Repetitive avalanche energy(Note 1 ) dv/dt Peak diode recovery dv/dt(Note 2) I AR =20A, R GS =50Ω, V GS =10V 25 mJ 4.6 V /ns 280 (2.3) W(W/°C) PD Total power dissipation (Derating factor above 25°C) TJ Operation junction temperature -55 to 150 Storage temperature -55 to 150 T STG TL T C =25°C Maximum soldering temperature, for 10 seconds 1.6mm from case Mounting torque, #6-32 or M3 screw www.nellsemi.com 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . I SD ≤ 20 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C. Page 1 of 7 ºC lbf . in (N . m) 20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heatsink Rth(j-a) Thermal resistance, junction to ambient Typ. Min. PARAMETER Max. UNIT 0.44 TO-3P(B) ºC/W 0.5 TO-3P(B) 40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS ▲V (BR)DSS/▲T J I DSS PARAMETER TEST CONDITIONS Drain to source breakdown voltage I D = 250µA, V GS = 0V Breakdown voltage temperature coefficient I D = 250µA, referenced to 25°C Drain to source leakage current Min. Typ. Max. 500 V V/ºC 0.5 V DS =500V, V GS =0V T C = 25°C 25 V DS =400V, V GS =0V T C =150°C 250 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D = 10A, V GS = 10V V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA g FS Forward transconductance V DS =40V, I D =10A C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance 27 t d(ON) Turn-on delay time 95 200 375 760 100 210 105 220 46 60 I GSS tr t d(OFF) tf QG UNIT nA Rise time Turn-off delay time 0.20 3.0 V DS = 25V, V GS = 0V, f =1MHz V DD = 250V, V GS = 10V, I D = 20A R GS = 25Ω (Note 1, 2) Total gate charge Gate to source charge Q GD Gate to drain charge (Miller charge) E AS Single pulse avalanche energy(Note 3) Ω 5.0 V 24.6 Fall time Q GS 0.23 V DD = 400V, V GS = 10V, I D = 20A (Note 1, 2) S 2400 3120 355 465 15 pF ns nC 22 I AS = 20A, L=5.0mH 1110 mJ SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 20A, V GS = 0V 1.4 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 20 D (Drain) A I SM Pulsed source current 80 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 20A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 3. I AS =20A, V DD =50V, L=5.0mH, R GS = 25Ω, starting T J =25°C. www.nellsemi.com Page 2 of 7 500 ns 7.2 μC 20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 20 N 50 B Current rating, ID 20 = 20A MOSFET series N = N-Channel Voltage rating, VDS 50 = 500V Package type B = TO-3P(B) ■ Gate charge test circuit & waveform V GS 200μF Qg Same Type as D.U.T. 50KΩ 12V 10V 300μF V DS V GS Q gd Q gs (D.U.T) 3mA ■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM V DS RL V DS 90% V DD V GS RG D.U.T. V GS 10% 10V t d(ON) www.nellsemi.com Page 3 of 7 tr t on t d(OFF) tf t off 20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ UNCLAMPED INDUCTIVE SWITCHING & WAVEFORMS L V DS E AS = BV DSS 1 Ll AS 2 2 BV DSS - V DD BV DSS lD l AS RG V DD l D (t) D.U.T. 10V V DD V DS (t) tp Time tP ■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS D.U.T. + V GS (Driver) D= Gate Pulse Width Gate Pulse Period 10V V DS l FM , Body Diode Forward Current l SD (D.U.T) I SD L di/dt l RM Body Diode Reverse Current RG Driver V GS Same Type as DUT * dv/dt controlled by R G * l SD controlled by pulse period V DD Body Diode Recovery dv/dt V DS (D.U.T) V DD Body Diode Forward Voltage Drop www.nellsemi.com Page 4 of 7 RoHS RoHS 20N50 Series SEMICONDUCTOR Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.2 Transfer characteristics 10 2 V GS Top: 15V 10V 8V 7V 6.5V 6V 10 1 Bottorm: 5.5V Drain current, l D (A) Drain Current, l D (A) Fig.1 On-State characteristics 10 0 150ºC 10 1 25ºC -55ºC Note: 1. V DS = 40V 2. 250µs Pulse Test Note: 1. 250µs Pulse Test 2. T C = 25°C 10 -1 10 -1 10 0 10 0 10 1 Drain-Source voltage, V DS (V) 10 12 Fig.4 Body diode forward voltage variation vs. Source current and Temperatue 0.8 Reverse drain current, l SD (A) Drain-Source On-Resistance, R DS(ON) (Ω) 8 Gate-Source voltage, V GS (V) Fig.3 On-Resistance variation vs. drain current and gate voltage 0.6 V GS = 10V 0.4 V GS = 20V 0.2 Note: T C = 25°C 15 45 30 75 60 10 1 25ºC Note: 1. V GS = 0V 2. 250µs Pulse Test 10 0 0.2 0.0 0 150ºC 90 Drain current, I D (A) C iss = C gs +C gd ( C ds = shorted ) C oss = C ds +C gd C rss = C gd 5000 Coss 4000 3000 Ciss Note: 1. V GS = 0V 2. f = 1 MHz 2000 1000 0 10 -1 0.8 1.0 1.2 1.4 1.6 Crss 12 V DS = 100V V DS = 250V 10 V DS = 400V 8 6 4 2 Note: l D = 20A 0 10 0 10 1 0 Drain-Source voltage, V DC (V) www.nellsemi.com 0.6 Fig.6 Gate charge characteristics Gate-to-Source voltage,V GS (V) 6000 0.4 Source-Drain voltage, V SD (V) Fig.5 Capacitance characteristics Capacitance (pF) 6 4 2 10 20 30 40 Total gate charge, Q G (nC) Page 5 of 7 50 20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature 3.0 Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain-Source breakdown voltage, BV Dss (Normalized) 1.2 1.1 1.0 0.9 Note: 1. V GS = 0V 2. l D = 250μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note: 1. V GS = 10V 2. l D = 10A 0.5 0.0 -100 200 -50 Junction temperature, T j (°C) 10μs 1ms 10ms 10 1 DC 100ms 15 10 5 Note: 1. T C = 25 ° C 2. T J = 150°C 3. Sing Pulse 10 1 10 2 0 10 3 25 75 50 Drain-Source voltage, V DS (V) 100 10 0 D = 0.5 0.2 10 -1 0.1 0.05 P DM t1 0.02 0.01 Notes: Single pulse 10 -2 10 -5 10 -4 125 Case temperature, T J (°C) Fig.11 Transient thermal response curve Thermal response, Rth(j-c) (t) 200 20 Drain current, l D (A) 100μs 10 -3 t2 1. Rth(j-c) (t) = 0.44°C/W Max. 2. Duty factor, D = t1/ t 2 3. TJM - TC = PDM * Rth(j-c) (t) 10 -2 10 -1 Square wave pulse duration, t 1 (sec) www.nellsemi.com 150 25 10 2 Drain current, l D (A) 100 Fig.10 Maximum drain current vs. Case temperature Operation in This Area is Limited by R DS (on) 10 -1 10 0 50 Junction temperature, T J (°C) Fig.9 Maximum safe operating area 10 0 0 Page 6 of 7 10 0 10 1 150 20N50 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style 19.9±0.3 4.0 20.0 min 4.0 max 1.8 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 3 5.45±0.1 G D S 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 D (Drain) G (Gate) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 7 S (Source)