16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G D G S TO-220AB (16 N60A ) D S D FEATURES RDS(ON) = 0.17Ω @ VGS = 10V Ultra low gate charge(52.3nC max.) Low reverse transfer capacitance (C RSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G D S TO-3PB (16N60B) D (Drain) PRODUCT SUMMARY ID (A) 16 VDSS (V) 600 RDS(ON) (Ω) 0.17 @ V GS = 10V QG(nC) max. 52.3 G (Gate) S (Source) www.nellsemi.com Page 1 of 10 TO-220F (16N60AF) 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID Gate to Source voltage V ±30 T C =25°C Continuous Drain Current 16 T C =100°C 10.1 A I DM Pulsed Drain current(Note 1) I AR Avalanche current(Note 1) E AR Repetitive avalanche energy(Note 1) I AR =16A, R GS =50Ω, V GS =10V 1.34 E AS Single pulse avalanche energy(Note 2) I AS =5.3A, L=7.1mH 355 dv/dt 48 5.3 100 Peak diode recovery dv/dt(Note 3) 20 V/ns T C =25°C PD Derate above 25 ° C T STG TL mJ MOSFET dv/dt ruggedness(Note 3) Total power dissipation TJ UNIT T C =25°C TO-220AB/TO-3PB 134.4 TO-220F 35.7 TO-220AB/TO-3PB 1.08 TO-220F 0.29 W/ ºC Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds W ºC 300 1.6mm from case Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m) Note: 1. Repetitive rating: pulse width limited by junction temperature. . 2 . I AS = 5.3A, V DD = 50V, R GS = 25Ω, starting T J =25°C. 3 . I SD ≤ 16A, di/dt ≤ 200 A/µs, V DD = 380V, starting T J = 25°C. THERMAL RESISTANCE SYMBOL Rth(j-c) Min. PARAMETER Thermal resistance, junction to case Typ. TO-220AB/TO-3PB Thermal resistance, case to heatsink TO-3PB 3.5 Thermal resistance, junction to ambient TO-3PB TO-220AB/TO220F www.nellsemi.com 0.24 ºC/W TO-220AB/TO-220F Rth(j-a) UNIT 0.93 TO-220F Rth(c-s) Max. Page 2 of 10 0.5 40 62.5 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 1mA, V GS = 0V Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS Drain to source leakage current 600 V V/ºC 0.73 V DS =600V, V GS =0V T C = 25°C 10 V DS =480V, V GS =0V T C =125°C 100 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 8A V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA Forward transconductance V DS = 40V l D = 8A g fs 0.17 2 TO-3PB 20 TO-220AB/TO-220F 13 0.199 Ω 4 V S DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance C OSS Output capacitance V DS = 380V, V GS = 0V, f =1MHz Effective output capacitance V DS = 0 to 480V, V GS = 0V C oss eff. V DS = 100V, V GS = 0V, f =1MHz 1630 2170 70 95 5 10 40 60 pF 176 SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Q GS Turn-on delay time Rise time Turn-off delay time V DD = 380V, V GS = 10V I D = 8A, R GS = 4.7Ω (Note1,2) Fall time Total gate charge Gate to source charge Q GD Gate to drain charge (Miller charge) ESR Equivalent series resistance (G-S) V DD = 380V, V GS = 10V I D = 8A, (Note1,2) 15.8 41.6 15.5 41 60.3 130.6 20.2 50.4 40.2 52.3 6.7 ns nC 12.9 Drain open 2.9 Ω SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 8A, V GS = 0V 1.2 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 16 D (Drain) A I SM Pulsed source current 48 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 8A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 10 319 ns 4.4 μC 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 16 N 60 B Current rating, ID 16 = 16A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F B = TO-3P(B) ■ Gate charge test circuit & waveform V GS Qg RL 10V V DS V GS Q gs Q gd (D.U.T) 1mA Charge www.nellsemi.com Page 4 of 10 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM RL V DS V DS 90% V DD V GS RG D.U.T. 10% V GS 10V t d(ON) t d(OFF) tr t on tf t off ■ UNCLAMPED INDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS L V DS E AS = 1 L l 2 2 · AS BV DSS lD l AS RG V DD l D (t) D.U.T. 10V V DD V DS (t) tp Time tP ■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS D.U.T. + V GS (Driver) D= Gate Pulse Width Gate Pulse Period 10V V DS l FM , Body Diode Forward Current l SD (D.U.T) I SD L di/dt l RM Body Diode Reverse Current RG Driver V GS Same Type as DUT * dv/dt controlled by R G * l SD controlled by pulse period V DD Body Diode Recovery dv/dt V DS (D.U.T) V DD Body Diode Forward Voltage Drop www.nellsemi.com Page 5 of 10 Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.1 On-State characteristics Fig.2 Transfer characteristics 100 V GS Top: 15V 10V 8V 7V 6V 5V 4.5V 4V 10 Drain current, l D (A) Drain Current, l D (A) 100 1 150ºC 10 25ºC -55ºC 1 Note: 1. V DS = 20V 2. 250µs Pulse Test Note: 1. 250µs Pulse Test 2. T C = 25°C 0.1 0.1 10 1 0.1 20 8 Gate-Source voltage, V GS (V) Fig.3 On-Resistance variation vs. drain current and gate voltage Fig.4 Body diode forward voltage variation vs. Source current and Temperatue 0.6 100 Reverse drain current, l S (A) Drain-Source On-Resistance, R DS(ON) (Ω) 6 4 2 Drain-Source voltage, V DS (V) 0.5 0.4 V GS = 10V 0.3 V GS = 20V 0.2 Note: T C = 25°C 10 30 20 40 25ºC 10 Note: 1. V GS = 0V 2. 250µs Pulse Test 1 0.2 0.1 0 150ºC 50 Drain current, I D (A) C iss = C gs +C gd ( C ds = shorted ) C oss = C ds +C gd C rss = C gd 7500 Coss Note: 1. V GS = 0V 2. f = 1 MHz 5000 2500 0.6 0.8 1.4 1.6 Ciss V DS = 120V V DS = 380V 10 V DS = 480V 8 6 4 2 Note: l D = 8A 0 1 10 100 0 600 Drain-Source voltage, V DS (V) www.nellsemi.com 1.2 12 Crss 0 0.1 1.0 Fig.6 Gate charge characteristics Gate-Source voltage,V GS (V) 1000 0.4 Body diode forward voltage, V SD (V) Fig.5 Capacitance characteristics Capacitance (pF) RoHS RoHS 16N60 Series SEMICONDUCTOR 10 20 30 40 Total gate charge, Q G (nC) Page 6 of 10 50 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature 3.0 Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain-Source breakdown voltage, BV Dss (Normalized) 1.2 1.1 1.0 0.9 Note: 1. V GS = 0V 2. l D = 1mA 250μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note: 1. V GS = 10V 2. l D = 8A 0.5 0.0 -100 200 -50 0 50 100 150 Junction temperature, T j (°C) Junction temperature, T J (°C) Fig.9 Maximum safe operating area ( 16N60A/16N60B ) Fig.10 Maximum safe operating area (16N60AF) 100 100 20μs 20μs 100μs 10 Drain current, l D (A) Drain current, l D (A) 100μs 1ms 10ms Operation in This Area is Limited by R DS (on) DC 1 0.1 10 1ms 10ms 1 Operation in This Area is Limited by R DS (on) DC 0.1 Note: 1. T C = 25 ° C 2. T J = 150°C 3. Sing Pulse 0.01 1 Note: 1. T C = 25 ° C 2. T J = 150°C 3. Sing Pulse 10 100 0.01 1 1000 Drain-Source voltage, V DS (V) 20 15 10 5 0 25 50 75 100 125 150 Case temperature, T J (°C) www.nellsemi.com 10 100 Drain-Source voltage, V DS (V) Fig.11 Maximum drain current vs. Case temperature Drain current, l D (A) 200 Page 7 of 10 1000 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Thermal response, Rth(j-c) (°C/W) Fig.11-1 Transient thermal response curve for 16N60B & 16N60A 2 1 D = 0.5 0.2 0.1 0.1 P DM 0.05 0.02 t1 0.01 0.01 Notes: 1. Rth(j-c) (t) = 0.93°C/W Max. 2. Duty factor, D = t1/ t 2 3. TJM - TC = PDM * Rth(j-c) (t) Single pulse 0.005 10 -5 t2 10 -4 10 -3 10 -2 10 -1 1 Rectangular pulse duration (sec) Thermal response, Rth(j-c) (°C/W) Fig.11-2 Transient thermal response curve for 16N60AF 5 D = 0.5 1 0.2 0.1 P DM 0.05 0.1 0.02 t1 0.01 Notes: Single pulse 0.01 10 -5 10 -4 10 -3 1. Rth(j-c) (t) = 3.5°C/W Max. 2. Duty factor, D = t1/ t 2 3. TJM - TC = PDM * Rth(j-c) (t) 10 -2 10 -1 1 Rectangular pulse duration (sec) www.nellsemi.com t2 Page 8 of 10 10 100 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) PIN 2 1 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) 19.9±0.3 4.0 20.0 min 4.0 max 1.8 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3P(B) 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 3 5.45±0.1 G D S 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 D (Drain) G (Gate) All dimensions in millimeters(inches) www.nellsemi.com Page 9 of 10 S (Source) 16N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 10 of 10