MBR30100PT Series

MBR30100PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier,
Available
30A (15A x 2), 100V
RoHS*
COMPLIANT
FEATURES
175°C T J operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness, long
term reliability and overvoltage protection
Compliant to RoHS
Designed and qualified according to
JEDEC-JESD47
Solder bath temperature 260°C maximum, 40 s
1
2
3
TO-247AB(MBR30100PT)
CASE
PIN 2
DESCRIPTION
The MBR30100PT Schottky rectifier has been
optimized for low reverse leakage at high
temperature. The proprietary barrier technology
allows for reliable operation up to 175°C junction
temperature.
PIN 1
PIN 3
APPLICATIONS
Switching mode power supplies
DC to DC converters
Freewheeling diodes
Reverse battery protection.
PRODUCT SUMMARY
MECHANICAL DATA
l F(AV)
Case: TO-247AB (TO-3P)
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
15A x 2
VR
100V
V F at l F =15 A at 125°C
0.67V
l RM max .
6 mA at 125°C
T J max.
175°C
Diode variation
Dual dice
E AS
7.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
VALUE
UNIT
15 x 2
A
100
V
t p = 8.3ms, single half sine-wave
275
A
VF
15 A pk , T J = 125°C
0.67
V
TJ
Range
-65 to 175
°C
VALUE
UNIT
100
V
SYMBOL
l F(AV)
CHARACTERISTICS
Rectangular waveform
V RRM
l FSM
VOLTAGE RATINGS
SYMBOL
VR
V RWM
V DC
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PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Page 1 of 4
MBR30100 P T Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
VALUE
TEST CONDITIONS
UNIT
30
per device
per diode
l F(AV)
T C = 125°C, rated V R
A
15
Non-repetitive peak surge current
l FSM
Surge applied at rated load condition half wave
single phase 60 Hz
275
A
Non-repetitive avalanche energy,
per diode
E AS
T J = 25°C, L = 60mH, I AS = 0.5A
7.5
mJ
Repetitive avalanche current
l AR
Current decaying linearly to zero in 1 μs
Frequency limited by T J maximum V A = 1.5 x V R typical
0.5
A
TYP.
MAX.
UNIT
0.72
0.85
I F = 30A
0.85
0.95
I F = 15A
0.63
0.67
0.74
0.8
-
0.1
2.5
6
-
500
ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
I F = 15A
T J = 25°C
V FM (1)
Maximum forward voltage drop
V
T J = 125°C
I F = 30A
l RM (2)
Maximum instantaneous reverse current
T J = 25°C
Rated DC voltage
mA
T J = 125°C
Maximum junction capacitance
CT
V R = 5 V DC (test signal range
100 kHz to 1 MHz ) 25°C
pF
Note
(1) Pulse test : 300 µs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
Maximum junction temperature range
TJ
-65 to 175
Maximum storage temperature range
T stg
-65 to 175
UNIT
°C
Maximum thermal resistance,
junction to case (per diode)
R thJC
DC operation
R thCS
Mounting surface, smooth
and greased
1.6
°C/W
Typical thermal resistance,
case to heatsink
0.42
6.2
g
0.22
oz.
minimum
6 (5)
maximum
12 (10)
kgf . cm
(lbf . in)
Approximate weight
Mounting torque
Marking device
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Case style TO-247AB
Page 2 of 4
MBR30100PT
RoHS
RoHS
MBR30100 P T Series
SEMICONDUCTOR
Nell Semiconductors
Ordering Information Table
Device code
MBR
30
1
2
100 PT
3
4
1
-
Schottky MBR series
2
-
Current rating (30 = 30A, 15A x 2)
3
-
Voltage ratings, 100=100V
4
-
Circuit configuration, Center tap common cathode,
TO-247AB series package
BATINGS AND CHARACTERISTICS CURVES
(T A = 25°C unless otherwise noted)
Fig.2 Maximum non-repetitive peak forward
surge current per diode
Fig.1 Forward current derating curve
300
Peak forward surge current (A)
Average forward current(A)
35
30
25
20
15
10
5
200
150
100
50
0
0
25
50
75
100
125
150
175
100
Case temperature(°C)
Number of cycles at 60 Hz
Fig.3 Typical instantaneous forward
characteristics per diode
Fig.4 Typical reverse characteristics
per diode
100
T J = 175°C
10
T J = 150°C
T J = 125°C
1
T J = 100°C
0.1
0.01
0
10
1
T J = 25°C
lnstantaneous reverse current ( µ A)
0
lnstantaneous forward current (A)
T J = T J Max.
8.3 ms Single Half Sine-wave
250
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
lnstantaneous forward voltage (V)
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10000
T J = 175°C
1000
T J = 150°C
T J = 125°C
100
T J = 100°C
10
1
T J = 25°C
0.1
0.01
20
40
60
80
100
Percent of rated peak reverse voltage (%)
Page 3 of 4
MBR30100 P T Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
Fig.5 Typical junction capacitance
per diode
Transient thermal lmpedance (°C/W)
Fig.6 Typical transient thermal lmpedance
per diode
Junction capacitance (pF)
10000
1000
100
10
0.1
10
1
100
100
10
1
0.1
0.01
0.1
Reverse voltage (V)
1
Pulse duration, t (s)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
Anode
20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)
1
2
3
2.87 (0.113)
3.12 (0.123)
4.50 (0.177)Max
0.40 (0.016)
0.79 (0.031)
19.81 (0.780)
20.32 (0.800)
1.65 (0.065)
(TYP.)
2.13 (0.084)
1.01 (0.040)
1.40 (0.055)
(TYP.)
2.21 (0.087)
2.59 (0.102)
5.45 (0.215)
5.45 (0.215)
CASE
PIN 2
All dimensions in millimeters (inches)
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Page 4 of 4
PIN 1
PIN 3
10