MBR30100PT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Dual Common Cathode High-Voltage Schottky Rectifier, Available 30A (15A x 2), 100V RoHS* COMPLIANT FEATURES 175°C T J operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 260°C maximum, 40 s 1 2 3 TO-247AB(MBR30100PT) CASE PIN 2 DESCRIPTION The MBR30100PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. PIN 1 PIN 3 APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. PRODUCT SUMMARY MECHANICAL DATA l F(AV) Case: TO-247AB (TO-3P) Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum 15A x 2 VR 100V V F at l F =15 A at 125°C 0.67V l RM max . 6 mA at 125°C T J max. 175°C Diode variation Dual dice E AS 7.5 mJ MAJOR RATINGS AND CHARACTERISTICS VALUE UNIT 15 x 2 A 100 V t p = 8.3ms, single half sine-wave 275 A VF 15 A pk , T J = 125°C 0.67 V TJ Range -65 to 175 °C VALUE UNIT 100 V SYMBOL l F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM VOLTAGE RATINGS SYMBOL VR V RWM V DC www.nellsemi.com PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Page 1 of 4 MBR30100 P T Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current VALUE TEST CONDITIONS UNIT 30 per device per diode l F(AV) T C = 125°C, rated V R A 15 Non-repetitive peak surge current l FSM Surge applied at rated load condition half wave single phase 60 Hz 275 A Non-repetitive avalanche energy, per diode E AS T J = 25°C, L = 60mH, I AS = 0.5A 7.5 mJ Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 0.5 A TYP. MAX. UNIT 0.72 0.85 I F = 30A 0.85 0.95 I F = 15A 0.63 0.67 0.74 0.8 - 0.1 2.5 6 - 500 ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS I F = 15A T J = 25°C V FM (1) Maximum forward voltage drop V T J = 125°C I F = 30A l RM (2) Maximum instantaneous reverse current T J = 25°C Rated DC voltage mA T J = 125°C Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHz ) 25°C pF Note (1) Pulse test : 300 µs pulse width, 1% duty cycle (2) Pulse test : Pulse width ≤ 40 ms THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS VALUE Maximum junction temperature range TJ -65 to 175 Maximum storage temperature range T stg -65 to 175 UNIT °C Maximum thermal resistance, junction to case (per diode) R thJC DC operation R thCS Mounting surface, smooth and greased 1.6 °C/W Typical thermal resistance, case to heatsink 0.42 6.2 g 0.22 oz. minimum 6 (5) maximum 12 (10) kgf . cm (lbf . in) Approximate weight Mounting torque Marking device www.nellsemi.com Case style TO-247AB Page 2 of 4 MBR30100PT RoHS RoHS MBR30100 P T Series SEMICONDUCTOR Nell Semiconductors Ordering Information Table Device code MBR 30 1 2 100 PT 3 4 1 - Schottky MBR series 2 - Current rating (30 = 30A, 15A x 2) 3 - Voltage ratings, 100=100V 4 - Circuit configuration, Center tap common cathode, TO-247AB series package BATINGS AND CHARACTERISTICS CURVES (T A = 25°C unless otherwise noted) Fig.2 Maximum non-repetitive peak forward surge current per diode Fig.1 Forward current derating curve 300 Peak forward surge current (A) Average forward current(A) 35 30 25 20 15 10 5 200 150 100 50 0 0 25 50 75 100 125 150 175 100 Case temperature(°C) Number of cycles at 60 Hz Fig.3 Typical instantaneous forward characteristics per diode Fig.4 Typical reverse characteristics per diode 100 T J = 175°C 10 T J = 150°C T J = 125°C 1 T J = 100°C 0.1 0.01 0 10 1 T J = 25°C lnstantaneous reverse current ( µ A) 0 lnstantaneous forward current (A) T J = T J Max. 8.3 ms Single Half Sine-wave 250 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 lnstantaneous forward voltage (V) www.nellsemi.com 10000 T J = 175°C 1000 T J = 150°C T J = 125°C 100 T J = 100°C 10 1 T J = 25°C 0.1 0.01 20 40 60 80 100 Percent of rated peak reverse voltage (%) Page 3 of 4 MBR30100 P T Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Fig.5 Typical junction capacitance per diode Transient thermal lmpedance (°C/W) Fig.6 Typical transient thermal lmpedance per diode Junction capacitance (pF) 10000 1000 100 10 0.1 10 1 100 100 10 1 0.1 0.01 0.1 Reverse voltage (V) 1 Pulse duration, t (s) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) Anode 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) 1 2 3 2.87 (0.113) 3.12 (0.123) 4.50 (0.177)Max 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.65 (0.065) (TYP.) 2.13 (0.084) 1.01 (0.040) 1.40 (0.055) (TYP.) 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) 5.45 (0.215) CASE PIN 2 All dimensions in millimeters (inches) www.nellsemi.com Page 4 of 4 PIN 1 PIN 3 10