GBU6 Series

GBU6 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 6A
GBU6D Thru GBU6M
22±0.1
15.2±0.1
3.6±0.1
10±0.1
18.5±0.1
3.5±0.15
2±0.1
+
~ ~
17.8±0.5
0.5±0.01
1±0.05
5.08±0.05
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave
+
~
rectification for big power supply, field supply for
DC motor, industrial automation applications.
ADVANTAGE
PRIMARY CHARACTERRISTICS
International standard package
Epoxy meets UL 94 V-0 flammability rating
Small volume, light weight
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed :
260°C/10 second, 2.3kg tension force
Weight: 4.0g (0.14 ozs)
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Page 1 of 3
IF(AV)
6A
V RRM
400V to 1000V
I FSM
175A
IR
5 µA
VF
1.10V
T J max.
150ºC
GBU6 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
GBU6
PARAMETER
UNIT
SYMBOL
D
G
J
K
M
Maximum repetitive peak reverse voltage
V RRM
200
400
600
800
1000
V
Peak reverse non-repetitive voltage
V RSM
300
500
700
900
1100
V
V DC
200
400
600
800
1000
V
Maximum DC blocking voltage
I F(AV)
Maximum average forward rectified output current, T c = 85°C
Peak forward surge current single sine-wave superimposed on
I FSM
175
A
I 2t
127
A 2s
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 150
ºC
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
A
6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
GBU6
TEST
CONDITIONS
SYMBOL
I F = 3A
VF
D
T A = 25°C
voltage per diod
G
J
UNIT
K
M
1.10
V
5
IR
T A = 150°C
µA
500
THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted)
GBU6
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
D
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M3
R θJC (1)
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
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GBU
6
K
1
2
3
1
-
Product type : “GBU” Package,1Ø Bridge
2
-
I F(AV) rating : "6" for 6A
3
-
Voltage code : D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
Page 2 of 3
G
J
K
M
4.0
°C/W
0.8
N.m
4.0
g
GBU6 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
10
300
250
8
Forward surge current, (A)
Average forward output current, (A)
T J = 125°C
6
4
2
200
150
100
50
0
0
0
50
100
100
Ambient temperature (°C)
Number of cycles at 50H z
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
1000
100
Instantaneous forward current, (A)
Instantaneous reverse current, (μA)
10
1
150
100
10
TJ = 1
25°C
1.0
0.1
10
1.0
T J = 25°C
5°C
TJ = 2
0.1
0.6
0.01
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
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0.7
0.8
0.9
1.0
1.1
Forward voltage (V)
Page 3 of 3
1.2
1.3