IRF420, IRF421, IRF422, IRF423

^E.mL-don.du.cio'i Lpioducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE; (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF420, IRF421,
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
Description
• 2.2A and 2.5A, 450V and 500V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• rDS(ON)= 3-Ofi and 4.0Q
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Symbol
Ordering Information
9D
PART NUMBER
PACKAGE
BRAND
IRF420
TO-204AA
IRF420
IRF421
TO-204AA
IRF421
IRF422
TO-204AA
IRF422
IRF423
TO-204AA
IRF423
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF420, IRF421, IRF422, IRF423
Absolute Maximum Ratings
Tc = 25°c Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1)
• .Vnq
Drain to Gate Voltage (Res = 20k£2) (Note 1 ) . . . . • • • VDGR
ln
Continuous Drain Current. . .
Tr = 1 00°C
In
Pulsed Drain Current (Note 3) . .
Gate to Source Voltage . . . .
.
. -Vfic
Maximum Power Dissipation
. . .Pn
Linear Derating Factor
Single Pulse Avalanche Energy Rating (Note 4) . .
EAS
Operating and Storage Temperature
•Tj, TSTG
Maximum Temperature for Soldering
TL
Leads at 0 063in (1 6mm) from Case for 10s ...
Packaae Bodv for 10s, See TB334
. . . . Tntn
IRF420
500
500
2.5
1.6
10
±20
50
0.4
210
-55 to 150
IRF421
450
450
2.5
1.6
10
±20
50
0.4
210
-55 to 150
IRF422
500
500
2.2
1.4
8
±20
50
0.4
210
-5510150
300
260
300
260
300
260
IRF423
450
450
2.2
1.4
UNITS
8
A
V
V
A
A
±20
V
50
0.4
W
W/°C
210
mj
-55 to 150
°C
300
260
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications
Tc = 25°C, Unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IRF420, IRF422
500
_
_
V
IRF421.IRF423
450
-
-
V
2.0
-
4.0
V
VDS = Rated BVDSS, VGS = OV
-
-
25
UA
VDS = 0.8 x Rated BVDSS, VGS = OV,
Tj = 125°C
-
-
250
uA
2.5
_
,
A
2.2
-
-
A
±100
nA
2.5
3.0
Q
3.0
4.0
Q
1.5
2.3
-
S
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS
VGS(TH)
!DSS
'D(ON)
IRF420, IRF421
ID = 250uA, VGS = OV, (Figure 10)
VGS = VDS,lD = 250nA
VDS
=" to(ON) x rDS(ON)MAX> VGS = 1OV
(Figure 7)
IRF422, IRF423
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
!GSS
rDS(ON)
VGS = ±2°V
-
ID = 1-4A, VGS = 10V, (Figures 8, 9)
_
IRF420, IRF421
IRF422, IRF423
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
9fS
VDS * 10V, ID = 2-OA. (Figure 12)
'd(ON)
VDD = 250V, ID = 2.5A, RG = 18Q, R|_ = 96£J.
-
10
15
ns
tr
Times are Essentially Independent of Operating
Temperature
-
12
18
ns
'd(OFF)
-
28
42
ns
tf
-
12
18
ns
VGS = 10V, ID <= 2.5A, VDS = 0-8 x Rated BVDSs,
IG(REF) = 1.5mA, (Figures 14, 19, 20)
-
11
19
nC
Operating Temperature
-
5
-
nC
-
6
-
nC
Qg(TOT)
Gate to Source Charge
Qgs
Gate to Drain "Miller" Charge
Qgd
IRF420, IRF421, IRF422, IRF423
Electrical Specifications
Tc = 25°C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
300
-
PF
VDS = 25V, VGS = OV, f = 1MHz, (Figure 1 1 )
Input Capacitance
ClSS
Output Capacitance
CQSS
-
75
-
PF
Reverse Transfer Capacitance
CRSS
-
20
-
PF
Internal Drain Inductance
LD
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
Thermal Resistance Junction to Case
Rejc
Thermal Resistance Junction to Ambient
RejA
Free Air Operation
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
!SD
'SDM
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
^
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
Reverse Recovery Time
Reverse Recovered Charge
VSD
nH
12.5
nH
-
-
2.5
°C/W
-
-
30
°C/W
MIN
TYP
MAX
UNITS
-
-
2.5
A
10
A
.JJE
1
Source to Drain Diode Voltage (Note 2)
5.0
s
^
Tj = 25°C, ISD = 2.5A, VGS = OV, (Figure 13)
-
-
1.4
V
trr
Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/us
130
270
540
ns
QRR
Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/US
0.57
1.2
2.3
uC
NOTES:
2. Pulse test: pulse width < 300ns, duty cycle < 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting Tj = 25°C, L = 60mH, RG = 25n, peak IAS = 2.5A, Figures 15, 16.