^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 IRF420, IRF421, IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature Symbol Ordering Information 9D PART NUMBER PACKAGE BRAND IRF420 TO-204AA IRF420 IRF421 TO-204AA IRF421 IRF422 TO-204AA IRF422 IRF423 TO-204AA IRF423 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF420, IRF421, IRF422, IRF423 Absolute Maximum Ratings Tc = 25°c Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) • .Vnq Drain to Gate Voltage (Res = 20k£2) (Note 1 ) . . . . • • • VDGR ln Continuous Drain Current. . . Tr = 1 00°C In Pulsed Drain Current (Note 3) . . Gate to Source Voltage . . . . . . -Vfic Maximum Power Dissipation . . .Pn Linear Derating Factor Single Pulse Avalanche Energy Rating (Note 4) . . EAS Operating and Storage Temperature •Tj, TSTG Maximum Temperature for Soldering TL Leads at 0 063in (1 6mm) from Case for 10s ... Packaae Bodv for 10s, See TB334 . . . . Tntn IRF420 500 500 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 IRF421 450 450 2.5 1.6 10 ±20 50 0.4 210 -55 to 150 IRF422 500 500 2.2 1.4 8 ±20 50 0.4 210 -5510150 300 260 300 260 300 260 IRF423 450 450 2.2 1.4 UNITS 8 A V V A A ±20 V 50 0.4 W W/°C 210 mj -55 to 150 °C 300 260 °C °C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless otherwise specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IRF420, IRF422 500 _ _ V IRF421.IRF423 450 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = OV - - 25 UA VDS = 0.8 x Rated BVDSS, VGS = OV, Tj = 125°C - - 250 uA 2.5 _ , A 2.2 - - A ±100 nA 2.5 3.0 Q 3.0 4.0 Q 1.5 2.3 - S Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) BVDSS VGS(TH) !DSS 'D(ON) IRF420, IRF421 ID = 250uA, VGS = OV, (Figure 10) VGS = VDS,lD = 250nA VDS =" to(ON) x rDS(ON)MAX> VGS = 1OV (Figure 7) IRF422, IRF423 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) !GSS rDS(ON) VGS = ±2°V - ID = 1-4A, VGS = 10V, (Figures 8, 9) _ IRF420, IRF421 IRF422, IRF423 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) 9fS VDS * 10V, ID = 2-OA. (Figure 12) 'd(ON) VDD = 250V, ID = 2.5A, RG = 18Q, R|_ = 96£J. - 10 15 ns tr Times are Essentially Independent of Operating Temperature - 12 18 ns 'd(OFF) - 28 42 ns tf - 12 18 ns VGS = 10V, ID <= 2.5A, VDS = 0-8 x Rated BVDSs, IG(REF) = 1.5mA, (Figures 14, 19, 20) - 11 19 nC Operating Temperature - 5 - nC - 6 - nC Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd IRF420, IRF421, IRF422, IRF423 Electrical Specifications Tc = 25°C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 300 - PF VDS = 25V, VGS = OV, f = 1MHz, (Figure 1 1 ) Input Capacitance ClSS Output Capacitance CQSS - 75 - PF Reverse Transfer Capacitance CRSS - 20 - PF Internal Drain Inductance LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die. Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from the Flange and Source Bonding Pad. Thermal Resistance Junction to Case Rejc Thermal Resistance Junction to Ambient RejA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL !SD 'SDM Modified MOSFET Symbol Showing the Internal Devices Inductances. ^ TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D Reverse Recovery Time Reverse Recovered Charge VSD nH 12.5 nH - - 2.5 °C/W - - 30 °C/W MIN TYP MAX UNITS - - 2.5 A 10 A .JJE 1 Source to Drain Diode Voltage (Note 2) 5.0 s ^ Tj = 25°C, ISD = 2.5A, VGS = OV, (Figure 13) - - 1.4 V trr Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/us 130 270 540 ns QRR Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/US 0.57 1.2 2.3 uC NOTES: 2. Pulse test: pulse width < 300ns, duty cycle < 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting Tj = 25°C, L = 60mH, RG = 25n, peak IAS = 2.5A, Figures 15, 16.