TELEPHONE: (973) 376-2902 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX'(873) 376-0960 USA BOTTOM VIEW T°-7' PART NUMBER V(BR)QSS Ofa MIN MIN (mS) (V) la MAX (PA) |vQ8l-vQ82j MAX (mV) 2N3956 -50 1 -50 15 2N3957 -50 1 -50 20 2N3958 -50 1 -50 25 t 2 3 4 6 8 SOURCE 1 DRAIN 1 GATE 1 SOURCE 2 DRAIN 2 SATE 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL LIMIT Gate-Drain Voltage VQD -50 Gate-Source Voltage VQS -50 Forward Gate Current la 50 PARAMETERS/TEST CONDITIONS UNITS V Per Side Total Per Side Total Power Dissipation Power Derating Lead Temperature (1/16" from case for 10 seconds) 250 500 2.86 4.3 HD T stg -65 to 200 TL 300 "C LIMITS 2N3956 SYMBOL mW/°C -55 to 150 ELECTRICAL CHARACTERISTICS1 PARAMETER mW Tj Operating Junction Temperature Storage Temperature mA 2N3957 TEST CONDITIONS TYP8 MIN MAX MIN -50 MAX 2N3958 MIN MAX UNIT STATIC Gate-Source Breakdown Voltaga V(BR)GSS IO--I.UA. VDS « o v -57 -50 Gate-Source Cutoff Voltaga VQS(OFF) Vos = 20 V. I D = 1 nA -2 -1 -4.5 -1 -4.5 -1 -4.5 VDSI' 20 V, VQ8 = 0 V 3 0.5 5 0.5 5 0.5 5 V Saturation Drain Currant IDSS Gate Reverse Currant 'ass Gate Operating Currant >a VQS - -30 V V°*'°V TA-150-C TA,125.C V -10 -100 -100 -100 PA -500 -500 .500 n'A -50 -50 -50 PA -O.B -250 -250 -250 nA -1.7 -4.2 -4.2 -4.2 VDS = 20V, I 0 = 200 MA -1,5 Gats-Source Forward Voltaga VOS(F) l a « 1 mA. VDS = OV m'A -20 '"-S VDS = 20 V ID=200^A VDS = 20 V. I 0 = 5 0 JlA Gate-Source Voltage -50 0.7 -0.5 -4 2 -0.5 -4 2 -0.5 -4 V 2 VI .Semi-Conductors reserves the right m change test conditions, parameter limits :ind packuge dimensions without notice Information furnished by NI Scmi-Cunductors is believed to he both accurate and reliable .11 the lime of going to press. However \ Scini <. I'DiliiLlurs jssiuiits no respiinsibilily tor nny errors nr omissions discovered in its u>e NJ .Stnu-LnnJiieti rs encuur'iues -u^ti incr1; tn vait\l ikilushceis .ire current More plncina orders DYNAMIC Common-Source Forward Trantconductance 3(. Common-Sourca Output Conductance Go. Drain-Gate Capacitance Cdgo Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Nolte Voltage CT,. Noise Figure NF c,,. •„ Vos » 20 V, V09 • 0 V f = 1 kHz > VD9 - 2 0 V , VQS - 0 V f = 200 MHZ V08 - 20 V. Vas > 0 V f • 1 kHz V 00 « 10 V, l s - O m A f - 1 MHz VM - 20V, VQS * 0 V f « 1 MHz 2.5 1 2 1 3 1 3 1 » 1 3 1 * 35 35 35 1 1.5 '1.5 1.5 3 4 4 4 1 1.2 1.2 1.2 7 V00-.10 V, I D .200MA 10 f « 1 kHz Vos . 20 V. Vos - 0 V f ° 100 Hz. R a * 10 Mil <0.1 MS pF ny/ , 'ViS 0,5 0.5 0.5 dB 15 20 25 mV 25 50 75 100 MV/ 25 50 75 MATCHING Differential |Vosi-V OS z| VDS .20 V. ID «200 MA Gate-Source Voltage Gate-Source Voltage 4|VGSi-Vas2| VDS = 20 V T « -55 to 25*C Differential Change ID = 200 MA T = 25 to 125'C AT with Temperature Saturation Drain Current Ratio Transconductance Ratio Differential Gate Current 'DSSI Vog =. 20 V. Vas = 0 V 'DSS2 om Ot«2 I'ai-'o2| Vos » 20V, I0 = 200 MA f = 1 kHz Vog .20 V. I 0 = 200 MA T A =125'C 10 , 100 0.97 0.95 1 0.9 1 0.85 1 0.97 0.95 1 0.9 1 0.65 1 0.2 10 10 10 /•c nA