2N3956 - New Jersey Semiconductor

TELEPHONE: (973) 376-2902
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
(212) 227-6005
FAX'(873) 376-0960
USA
BOTTOM VIEW
T°-7'
PART
NUMBER
V(BR)QSS Ofa
MIN
MIN
(mS)
(V)
la
MAX
(PA)
|vQ8l-vQ82j
MAX
(mV)
2N3956
-50
1
-50
15
2N3957
-50
1
-50
20
2N3958
-50
1
-50
25
t
2
3
4
6
8
SOURCE 1
DRAIN 1
GATE 1
SOURCE 2
DRAIN 2
SATE 2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
LIMIT
Gate-Drain Voltage
VQD
-50
Gate-Source Voltage
VQS
-50
Forward Gate Current
la
50
PARAMETERS/TEST CONDITIONS
UNITS
V
Per Side
Total
Per Side
Total
Power Dissipation
Power Derating
Lead Temperature
(1/16" from case for 10 seconds)
250
500
2.86
4.3
HD
T stg
-65 to 200
TL
300
"C
LIMITS
2N3956
SYMBOL
mW/°C
-55 to 150
ELECTRICAL CHARACTERISTICS1
PARAMETER
mW
Tj
Operating Junction Temperature
Storage Temperature
mA
2N3957
TEST CONDITIONS
TYP8
MIN MAX
MIN
-50
MAX
2N3958
MIN
MAX UNIT
STATIC
Gate-Source
Breakdown Voltaga
V(BR)GSS
IO--I.UA. VDS « o v
-57
-50
Gate-Source
Cutoff Voltaga
VQS(OFF)
Vos = 20 V. I D = 1 nA
-2
-1
-4.5
-1
-4.5
-1
-4.5
VDSI' 20 V, VQ8 = 0 V
3
0.5
5
0.5
5
0.5
5
V
Saturation Drain
Currant
IDSS
Gate Reverse
Currant
'ass
Gate Operating
Currant
>a
VQS - -30 V
V°*'°V
TA-150-C
TA,125.C
V
-10
-100
-100
-100
PA
-500
-500
.500
n'A
-50
-50
-50
PA
-O.B
-250
-250
-250
nA
-1.7
-4.2
-4.2
-4.2
VDS = 20V, I 0 = 200 MA -1,5
Gats-Source
Forward Voltaga
VOS(F)
l a « 1 mA. VDS = OV
m'A
-20
'"-S
VDS = 20 V
ID=200^A
VDS = 20 V. I 0 = 5 0 JlA
Gate-Source Voltage
-50
0.7
-0.5
-4
2
-0.5
-4
2
-0.5
-4
V
2
VI .Semi-Conductors reserves the right m change test conditions, parameter limits :ind packuge dimensions without notice
Information furnished by NI Scmi-Cunductors is believed to he both accurate and reliable .11 the lime of going to press. However \
Scini <. I'DiliiLlurs jssiuiits no respiinsibilily tor nny errors nr omissions discovered in its u>e NJ .Stnu-LnnJiieti rs encuur'iues
-u^ti incr1; tn vait\l ikilushceis .ire current More plncina orders
DYNAMIC
Common-Source
Forward
Trantconductance
3(.
Common-Sourca
Output Conductance
Go.
Drain-Gate
Capacitance
Cdgo
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Nolte Voltage
CT,.
Noise Figure
NF
c,,.
•„
Vos » 20 V, V09 • 0 V
f = 1 kHz
>
VD9 - 2 0 V , VQS - 0 V
f = 200 MHZ
V08 - 20 V. Vas > 0 V
f • 1 kHz
V 00 « 10 V, l s - O m A
f - 1 MHz
VM - 20V, VQS * 0 V
f « 1 MHz
2.5
1
2
1
3
1
3
1
»
1
3
1
*
35
35
35
1
1.5
'1.5
1.5
3
4
4
4
1
1.2
1.2
1.2
7
V00-.10 V, I D .200MA
10
f « 1 kHz
Vos . 20 V. Vos - 0 V
f ° 100 Hz. R a * 10 Mil <0.1
MS
pF
ny/
,
'ViS
0,5
0.5
0.5
dB
15
20
25
mV
25
50
75
100
MV/
25
50
75
MATCHING
Differential
|Vosi-V OS z|
VDS .20 V. ID «200 MA
Gate-Source Voltage
Gate-Source Voltage 4|VGSi-Vas2| VDS = 20 V T « -55 to 25*C
Differential Change
ID = 200 MA T = 25 to 125'C
AT
with Temperature
Saturation
Drain Current Ratio
Transconductance
Ratio
Differential
Gate Current
'DSSI
Vog =. 20 V. Vas = 0 V
'DSS2
om
Ot«2
I'ai-'o2|
Vos » 20V, I0 = 200 MA
f = 1 kHz
Vog .20 V. I 0 = 200 MA
T A =125'C
10
,
100
0.97
0.95
1
0.9
1
0.85
1
0.97
0.95
1
0.9
1
0.65
1
0.2
10
10
10
/•c
nA