, Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. SYMBOL PARAMETER VDS ID Drain-source voltage Drain current (d.c.) Total power dissipation Drain-source on-state resistance ptot RDS(ON) MAX. 1000 5,1 125 2,0 UNIT V A W n MECHANICAL DATA Dimensions in mm Net mass: 12 g 25,4 Pinning: 1 - Gate 2 » Drain 3 " Source ~8,3~ 4,2 19,5 38,84 30,1 10,9-* Ftg. 1 ,^J 1,55 1 max 7Z»3««!.3 T03; drain connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.b'eboth accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) M1N. CONDITIONS SYMBOL PARAMETER _ Drain-source voltage VDS Drain-gate voltage RGS = 20 kn VDGR Gate-source voltage ±VGS Drain current (d.c.) T mb - 25 °C ID Drain current (d.c.) Tmb»100°C ID Drain current (pulse peak value) Tmb= 25 °C !DM Total power dissipation T mb 25 °C Ptot -55 Storage temperature Tstg Junction temperature — T — MAX. 1000 1000 20 5,1 3,2 20 125 ISO 150 J UNIT V V V A A A W °C °c THERMAL RESISTANCES From junction to mounting base From junction to ambient Rthj-mb-l,OK/W Rthj-a =35 K/W STATIC CHARACTERISTICS Tmb * 25 °C unless otherwise specified CONDITIONS MIN. SYMBOL PARAMETER Drain-source breakdown voltage VGS -0V; ID -0,25m A 1000 V(BR)DSS Gate threshold voltage 2,1 _ VDS = V GSS ID " i mA VGS<TO) Zero gate voltage drain current VDS " 1000 V;VGs = o V;TJ =• 25 °c IDSS Zero gate voltage drain current VDS - 1000 v; VGS = o V;TJ - 1 25 'c IDSS Gate source leakage current VGS= *2o V; VDS • o v IGSS Drain-source on-state resistance VGS = 10 V; ID -2,6 A RDSCON) — TYP. MAX. „ 3,0 4,0 20 250 0,1 1,0 10 100 1,7 2,0 UNIT V V MA mA nA n DYNAMIC CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL PARAMETER Forward tronsconductance gfs Ciss coss crss (d on tr tdoff tf Ld LS Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain Inductance Internal source inductance CONDITIONS MIN. TYP. MAX. UNIT VDSa 25 V; ID • 2,6 A 1,4 3,5 3900 5000 PF 180 70 60 90 330 110 300 120 90 140 430 140 pF pF ns ns ns ns VGS - o v; VDS - 25 v; f - 1 MHZ VDD = 30V;lD = 2,5A; - VGS = 10 v; RGS- so n; R g e n -50n Measured from contact screw on header closer to source pin and centre of die Measured from source lead 6 mm from package to source bond pad 5,0 - S nH 12,5 - nH TYP. MAX. 1,15 5,1 20 1,4 UNIT A A V 2000 30 - ns PC REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb ~ 25 °C unless otherwise specified SYMBOL PARAMETER Continuous reverse drain current IDR Pulsed reverse drain current IDRM Diode forward on-voltage VSD trr Qrr Reverse recovery time Reverse recovery charge CONDITIONS MIN. Tmb*25'C Tmb-25'C IF = 10,2 A; VGS -0V; Tj-2S°C IF » 5,1 A;Tj = 25°C -dlp/dt - 100 A/MS; Tj-25°C; VGS-OV;VR-100V