Eu ^ami-donauctoi ^Product*., One.. </ TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 1 SOURCE MAXIMUM RATINGS Rating Drain -Source Voltage Drain-Gate Voltage Gate-Source Voltage — Continuous — Non-repetitive (tp < 50 u.s) Symbol MPF930 MPF960 MPF990 Unit VDS VDG 35 60 90 Vdc 35 60 90 Vdc ±20 ±40 VGS VGSM Drain Current Continuous^) Pulsed(2) Vdc Vpk TO-92 (TO-226AE) Adc 2.0 3.0 ID 'DM PD Total Device Dissipation @T A = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.0 8.0 Watts mVW°C TJ. Tstg -55 to 150 °C 9JA 125 "C/W Thermal Resistance ELECTRICAL CHARACTERISTICS OA = 25°c unless otherwise noted) Characteristic Unit Min Typ Max 35 60 90 — — — — — — 'GSS — — 50 nAdc 'DSS — — 10 uAdc 1.0 — 3.5 Vdc MPF930 MPF960 MPF990 — — _ 0.4 0.6 0.6 0.7 0.8 1.2 (ID = 1.0 Adc) MPF930 MPF960 MPF990 — — — 0.9 1.2 1.2 1.4 1.7 2.4 (ID = 2.0 Adc) MPF930 MPF960 MPF990 — — — 2.2 2.8 2.8 3.0 3.5 4.8 Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = O, lD = 10u-Adc) Vdc V(BR)DSX MPF930 MPF960 MPF990 Gate Reverse Current (VQS = 15 Vdc, VDS = °) ON CHARACTERISTICS^) Zero-Gate-Voltage Drain Current (VDS = Maximum Rating, VQS = 0) Gate Threshold Voltage (l D =1.0mAdc.V DS = VGs) Drain-Source On-Voltage (Vgs = 1 ° Vdc) (ID = 0.5 Adc) vGS(Th) Vdc vDS(on) 1. The Power Dissipation of the package may result in a lower continuous drain current. . Pulse Test: Pulse Width ^ 300 us, Duty Cycle z 2.0%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MPF930 MPF96O MPF990 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Win Typ Max — — — 0.9 1.2 1.2 1.4 1.7 2.0 'D(on) 1.0 2.0 — Amps ciss — 70 — PF crss — 20 —• PF CQSS — 49 — PF 9fs 200 380 — mmhos Turn-On Time ton — 7.0 15 ns Turn-Off Time toff — 7.0 15 ns Characteristic Symbol Unit ON CHARACTERISTICS^) (Continued) Static Drain-Source On Resistance (VGS = 1 0 Vdc, ID = 1 .0 Adc) Q rDS(on) MPF930 MPF960 MPF990 On-State Drain Current (VDS = 25 vdc, VGS = 1 °Vdc) SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 .0 MHz) Reverse Transfer Capacitance (vDs = 25 vdc, VGS = o, f = 1 .0 MHZ) Output Capacitance (VDS = 25 Vdc. VGS = o, f = 1 .0 MHZ) Forward Transconductance (VDS = 25 Vdc, ID = 0.5 Adc) SWITCHING CHARACTERISTICS 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. RESISTIVE SWITCHING +25 V T ?23 PUl^GtNbKAIOK V.n^ | r 50 Q ATTENUATOR TO SAMPLING SCOPE 50 Q INPUT -, ^ -f L^J -1™1* ^ 7 C 90% ^\90% / i" 5 V "f-i t K T ' " ] Qj) J~ ~ §50 § 1 0 M L± J - 11 1 OUTPUT INVERTED INPUT Figure 1. Switching Test Circuit \/ v°ut~ ~T 10V / 7^50% 90% Jr PULSE 50%\~ Vjn-*-J Figure 2. Switching Waveforms WIDTH ^N