FAIRCHILD BF244C

BF244A / BF244B / BF244C
BF244A
BF244B
BF244C
S
G
TO-92
D
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
30
V
- 30
V
ID
Drain Current
50
mA
IGF
Forward Gate Current
10
mA
Tstg
Storage Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
BF244A / BF244B / BF244C
350
2.8
125
mW
mW/°C
°C/W
357
°C/W
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
IG = 1.0 µA, VDS = 0
VGS = - 20 V, VDS = 0
30
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
VGSS(off)
Gate-Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
VGS
Gate-Source Voltage
VDS = 15 V, ID = 200 µA
244A
244B
244C
VDS = 15 V, VGS = 0
V
5.0
nA
- 0.5
- 8.0
V
- 0.4
- 1.6
- 3.2
- 2.2
- 3.8
- 7.5
V
V
V
244A
244B
244C
2.0
6.0
12
6.5
15
25
mA
mA
mA
3.0
6.5
mmhos
mmhos
BF244A / BF244B / BF244C
N-Channel RF Amplifier
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance
yos
Output Admittance
VDS = 15 V, VGS = 0, f = 1.0 kHz
VDS = 15 V, VGS = 0, f = 200 MHz
VDS = 15 V, VGS = 0, f = 1.0 kHz
yrs
Reverse Transfer Admittance
VDS = 15 V, VGS = 0, f = 200 MHz
1.0
Ciss
Input Capacitance
VDS = 20 V, VGS = - 1.0 V
3.0
µmhos
pF
Crss
Reverse Transfer Capacitance
0.7
pF
Coss
Output Capacitance
0.9
pF
NF
Noise Figure
1.5
dB
F(Yfs)
Cut-Off Frequency
VDS = 20 V, VGS = - 1.0 V,
f = 1.0 MHz
VDS = 20 V, VGS = - 1.0 V,
f = 1.0 MHz
VDS = 15 V, VGS = 0, RG = 1.0 kΩ,
f = 100 MHz
VDS = 15 V, VGS = 0
700
MHz
yfs
5.6
40
µmhos
5
Typical Characteristics
Channel Resistance vs Temperature
Transfer Characteristics
1000
V GS(OFF) = -4.5V
V DS
= 15V
r DS - DRAIN ON RESISTANCE (Ω )
20
ID - DRAIN CURRENT (mA)
O
TA = -55 C
16
O
T A = +25 C
T A = +125O C
12
O
TA = -55 C
O
T A = +25 C
8
T A = +125O C
4
-2.5 V
0
500
-1
-2
-3
-4
VGS - GATE-SOURCE VOLTAGE(V)
-5
-2.5 V
200
-5.0V
100
-8.0 V
50
30
V DS
20
= 100mV
V GS = 0 V
10
0
V GS(OFF) = -1.0V
300
-50
0
50
100
150
T A - AMBIENT TEMPERATURE ( C)