BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage VGS Gate-Source Voltage 30 V - 30 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA Tstg Storage Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BF244A / BF244B / BF244C 350 2.8 125 mW mW/°C °C/W 357 °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS IG = 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0 30 V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGSS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA VGS Gate-Source Voltage VDS = 15 V, ID = 200 µA 244A 244B 244C VDS = 15 V, VGS = 0 V 5.0 nA - 0.5 - 8.0 V - 0.4 - 1.6 - 3.2 - 2.2 - 3.8 - 7.5 V V V 244A 244B 244C 2.0 6.0 12 6.5 15 25 mA mA mA 3.0 6.5 mmhos mmhos BF244A / BF244B / BF244C N-Channel RF Amplifier ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance yos Output Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz yrs Reverse Transfer Admittance VDS = 15 V, VGS = 0, f = 200 MHz 1.0 Ciss Input Capacitance VDS = 20 V, VGS = - 1.0 V 3.0 µmhos pF Crss Reverse Transfer Capacitance 0.7 pF Coss Output Capacitance 0.9 pF NF Noise Figure 1.5 dB F(Yfs) Cut-Off Frequency VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 kΩ, f = 100 MHz VDS = 15 V, VGS = 0 700 MHz yfs 5.6 40 µmhos 5 Typical Characteristics Channel Resistance vs Temperature Transfer Characteristics 1000 V GS(OFF) = -4.5V V DS = 15V r DS - DRAIN ON RESISTANCE (Ω ) 20 ID - DRAIN CURRENT (mA) O TA = -55 C 16 O T A = +25 C T A = +125O C 12 O TA = -55 C O T A = +25 C 8 T A = +125O C 4 -2.5 V 0 500 -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5 -2.5 V 200 -5.0V 100 -8.0 V 50 30 V DS 20 = 100mV V GS = 0 V 10 0 V GS(OFF) = -1.0V 300 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( C)